| Pd - Power Dissipation | 300W |
| Td(off) | 110ns |
| Td(on) | 32ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 21pF |
| Input Capacitance(Cies) | 2.48nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 95pF |
| Reverse Recovery Time(trr) | 130ns |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 1.2mJ |
| Description | 300W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T65HJU1 |
| Package | TO-247 |
| Model Number | JNG40T65HJU1 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 300W | Td(off) | 110ns |
| Td(on) | 32ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 21pF | Input Capacitance(Cies) | 2.48nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA | Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 95pF |
| Reverse Recovery Time(trr) | 130ns | Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 1.2mJ | Description | 300W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T65HJU1 | Package | TO-247 |
| Model Number | JNG40T65HJU1 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Induction converters, Uninterruptible power supplies, and other soft switching applications. The JNG40T65HJU1 features a 650V, 40A rating with a typical VCE(sat) of 1.7V at VGE=15V and IC=40A. Its high-speed switching capability and Trench and Field-Stop technology contribute to higher system efficiency and easy parallel switching.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| IGBT Electrical Characteristics | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA | |
| IGES | VGE=20V, VCE= 0V | - | - | b1;100 | nA | |
| VGE(th) | VGE= VCE, IC=1mA | 4.0 | 5.0 | 6.0 | V | |
| VCE(sat) | VGE=15V, IC= 40A | - | 1.7 | - | V | |
| Qg | VCC=520V VGE=15V IC=40A | - | 78 | - | nC | |
| td(on) | VCC=400V VGE=15V IC=40A RG=10Ω Inductive Load TC=25 ℃ | - | 32 | - | ns | |
| tr | - | 59 | - | ns | ||
| td(off) | - | 110 | - | ns | ||
| tf | - | 52 | - | ns | ||
| Eon | - | 1.2 | - | mJ | ||
| Eoff | - | 0.6 | - | mJ | ||
| Ets | - | 1.8 | - | mJ | ||
| Cies | VCE=30V VGE=0V f = 1MHz | - | 2480 | - | pF | |
| Coes | - | 95 | - | pF | ||
| Cres | - | 21 | - | pF | ||
| Diode Electrical Characteristics | VF | IF=40A | - | 1.5 | - | V |
| trr | VCE = 400V IF= 40A Dif/dt=1200A/us | - | 130 | - | ns | |
| IRR | - | 42 | - | A | ||
| Qr r | - | 3520 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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