Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 250W |
| Td(off) | 124ns |
| Td(on) | 24ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Gate Charge(Qg) | 183nC@15V |
| Reverse Recovery Time(trr) | 136ns |
| Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 1.4mJ |
| Input Capacitance(Cies) | 3.356nF |
| Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 179pF |
| Description | 250W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | IXXH60N65C4-HXY |
| Package | TO-247 |
| Model Number | IXXH60N65C4-HXY |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 250W | Td(off) | 124ns |
| Td(on) | 24ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 93pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Gate Charge(Qg) | 183nC@15V |
| Reverse Recovery Time(trr) | 136ns | Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 1.4mJ | Input Capacitance(Cies) | 3.356nF |
| Pulsed Current- Forward(Ifm) | 200A | Output Capacitance(Coes) | 179pF |
| Description | 250W 650V FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | IXXH60N65C4-HXY |
| Package | TO-247 | Model Number | IXXH60N65C4-HXY |
The IXXH60N65C4 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is suitable for applications requiring fast switching and low saturation voltage.
| Parameter | Value | Unit | Conditions |
| VCES (Collector-Emitter Voltage) | 650 | V | - |
| IC (Collector Current @TC=25C) | 100 | A | @TC=25C |
| IC (Collector Current @TC=100C) | 60 | A | @TC=100C |
| ICM (Pulsed Collector Current) | 200 | A | tp limited by TJmax |
| IF (Diode Continuous Forward Current @TC=25C) | 100 | A | @TC=25C |
| IF (Diode Continuous Forward Current @TC=100C) | 60 | A | @TC=100C |
| IFM (Diode Maximum Forward Current) | 200 | A | limited by TJmax |
| VGES (Gate-Emitter Voltage) | 30 | V | - |
| tSC (Short circuit withstand time) | 8 | s | VGE=15V, VCC400V, allowed number of short circuits<1000, times between short circuits1.0s, TJ175C |
| PD (Power Dissipation @TC=25C) | 250 | W | @TC=25C |
| TJmax, Tstg (Operating Junction and Storage Temperature Range) | -55 to 175 | - | |
| TL (Maximum Temperature for Soldering) | 260 | - | |
| RJC (Junction-to-Case for IGBT) | 0.60 | /W | - |
| RJC (Junction-to-Case for Diode) | 0.55 | /W | - |
| RJA (Junction-to-Ambient) | 40 | /W | - |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 1.65 | V | VGE =15V, IC =60A, TJ=25 |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 1.85 | V | VGE =15V, IC =60A, TJ=125 |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 2.00 | V | VGE =15V, IC =60A, TJ=175 |
| VGE(TH) (Gate Threshold Voltage) | 4.3 - 6.3 | V | VCE=VGE,IC=1mA |
| VF (Diode Forward Voltage) | 1.65 | V | IF=50A, TJ=25 |
| VF (Diode Forward Voltage) | 1.57 | V | IF=50A, TJ=125 |
| VF (Diode Forward Voltage) | 1.47 | V | IF=50A, TJ=175 |
| ICES (Collector-Emitter Leakage Current) | 10 | A | VCE=650V, VGE=0V |
| IGES(F) (Gate-Emitter Forward Leakage Current) | 200 | nA | VGE=+20V |
| IGES(R) (Gate-Emitter Reverse Leakage Current) | -200 | nA | VGE=-20V |
| Cies (Input Capacitance) | 3356 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Coes (Output Capacitance) | 179 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Cres (Reverse Transfer Capacitance) | 93 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Qg (Gate charge) | 183 | nC | VCC=520V, ICE=60A, VGE=15V |
| Qge (Gate-emitter charge) | 26 | nC | VCC=520V, ICE=60A, VGE=15V |
| Qgc (Gate-collector charge) | 83 | nC | VCC=520V, ICE=60A, VGE=15V |
| td(on) (Turn-on Delay Time) | 24 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| tr (Rise Time) | 88 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| td(off) (Turn-Off Delay Time) | 124 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| tf (Fall Time) | 73 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| Eon (Turn-On Switching Loss) | 1.40 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| Eoff (Turn-Off Switching Loss) | 1.20 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| Ets (Total Switching Loss) | 2.60 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 |
| td(on) (Turn-on Delay Time) | 30 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| tr (Rise Time) | 95 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| td(off) (Turn-Off Delay Time) | 152 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| tf (Fall Time) | 67 | ns | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| Eon (Turn-On Switching Loss) | 1.62 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| Eoff (Turn-Off Switching Loss) | 1.50 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| Ets (Total Switching Loss) | 3.12 | mJ | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 |
| Trr (Reverse Recovery Time) | 136 | ns | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 |
| Qrr (Reverse Recovery Charge) | 350 | nC | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 |
| Irrm (Reverse Recovery Current) | 6.9 | A | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 |
| Trr (Reverse Recovery Time) | 183 | ns | IF=60A, VCC=400V, di/dt=200A/s, TJ=175 |
| Qrr (Reverse Recovery Charge) | 560 | nC | IF=60A, VCC=400V, di/dt=200A/s, TJ=175 |
| Irrm (Reverse Recovery Current) | 7.8 | A | IF=60A, VCC=400V, di/dt=200A/s, TJ=175 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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