Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 300W |
| Td(off) | 158ns |
| Td(on) | 87ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 30pF |
| Input Capacitance(Cies) | 3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Pulsed Current- Forward(Ifm) | 90A |
| Output Capacitance(Coes) | 80pF |
| Reverse Recovery Time(trr) | 326ns |
| Switching Energy(Eoff) | 2.1mJ |
| Turn-On Energy (Eon) | 6.1mJ |
| Description | 300W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T120HS |
| Package | TO-247 |
| Model Number | JNG40T120HS |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 300W | Td(off) | 158ns |
| Td(on) | 87ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 30pF | Input Capacitance(Cies) | 3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | Pulsed Current- Forward(Ifm) | 90A |
| Output Capacitance(Coes) | 80pF | Reverse Recovery Time(trr) | 326ns |
| Switching Energy(Eoff) | 2.1mJ | Turn-On Energy (Eon) | 6.1mJ |
| Description | 300W 1.2kV TO-247 Single IGBTs RoHS | Mfr. Part # | JNG40T120HS |
| Package | TO-247 | Model Number | JNG40T120HS |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.
| Parameter | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector-Emitter Voltage (VCES) | 1200 | V | |||
| Gate-Emitter Voltage (VGES) | ±30 | V | |||
| Continuous Collector Current (IC) | (TC=25 ) | 80 | A | ||
| Continuous Collector Current (IC) | (TC=100) | 40 | A | ||
| Pulsed Collector Current (ICM) | (Note 1) | 90 | A | ||
| Diode Continuous Forward Current (IF) | (TC=100 ) | 40 | A | ||
| Diode Maximum Forward Current (IFM) | (Note 1) | 90 | A | ||
| Short Circuit Withstand Time (tsc) | 10 | us | |||
| Maximum Power Dissipation (PD) | (TC=25 ) | 300 | W | ||
| Maximum Power Dissipation (PD) | (TC=100) | 110 | W | ||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to case for IGBT (Rth j-c) | 0.42 | / W | |||
| Thermal Resistance, Junction to case for Diode (Rth j-c) | 0.8 | / W | |||
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | |||||
| Collector-Emitter Breakdown Voltage (BVCES) | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| Collector-Emitter Leakage Current (ICES) | VCE= 1200V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward (IGES) | VGE=30V, VCE= 0V | - | - | 100 | nA |
| Gate Leakage Current, Reverse (IGES) | VGE= -30V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage (VGE(th)) | VGE= VCE, IC= 250uA | 4.5 | - | 6.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC= 40A | - | 2.1 | - | V |
| Total Gate Charge (Qg) | VCC=600V VGE=15V IC=40A | - | 107 | - | nC |
| Gate-Emitter Charge (Qge) | - | 36 | - | nC | |
| Gate-Collector Charge (Qgc) | - | 58 | - | nC | |
| Turn-on Delay Time (td(on)) | VCC=600V VGE=15V IC=40A RG=15Ω Inductive Load TC=25 °C | - | 87 | - | ns |
| Turn-on Rise Time (tr) | - | 231 | - | ns | |
| Turn-off Delay Time (td(off)) | - | 158 | - | ns | |
| Turn-off Fall Time (tf) | - | 139 | - | ns | |
| Turn-on Switching Loss (Eon) | - | 6.1 | - | mJ | |
| Turn-off Switching Loss (Eoff) | - | 2.1 | - | mJ | |
| Total Switching Loss (Ets) | - | 8.2 | - | mJ | |
| Input Capacitance (Cies) | VCE=25V VGE=0V f = 1MHz | - | 3000 | - | pF |
| Output Capacitance (Coes) | - | 80 | - | pF | |
| Reverse Transfer Capacitance (Cres) | - | 30 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | |||||
| Diode Forward Voltage (VF) | IF=40A | - | 1.7 | 2.7 | V |
| Diode Reverse Recovery Time (trr) | VCE = 600V IF= 40A dIF/dt = 250A/us | - | 326 | - | ns |
| Diode peak Reverse Recovery Current (IRR) | - | 15.6 | - | A | |
| Diode Reverse Recovery Charge (QRR) | - | 2843 | - | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!