Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 136ns |
| Td(on) | 26ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 1.52nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Gate Charge(Qg) | 57nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 56ns |
| Switching Energy(Eoff) | 430uJ |
| Turn-On Energy (Eon) | 900uJ |
| Description | IGBT 650V 70A Through Hole TO-247 |
| Mfr. Part # | NGTG35N65FL2WG-HXY |
| Package | TO-247 |
| Model Number | NGTG35N65FL2WG-HXY |
View Detail Information
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Product Specification
| Td(off) | 136ns | Td(on) | 26ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Input Capacitance(Cies) | 1.52nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA | Gate Charge(Qg) | 57nC@15V |
| Operating Temperature | -40℃~+175℃ | Reverse Recovery Time(trr) | 56ns |
| Switching Energy(Eoff) | 430uJ | Turn-On Energy (Eon) | 900uJ |
| Description | IGBT 650V 70A Through Hole TO-247 | Mfr. Part # | NGTG35N65FL2WG-HXY |
| Package | TO-247 | Model Number | NGTG35N65FL2WG-HXY |
The NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 70 | A | ||
| IC | DC collector current(1) | TC = 100C | 40 | A | ||
| ICM | Pulsed collector current | TC = 25C | 160 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 70 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 40 | A | ||
| IFM | Diode pulsed current | TC = 25C | 160 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 125 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Static Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 125C | 1.85 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 175C | 1.95 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A | 1.8 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A ,TVJ = 125C | 1.5 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 40A ,TVJ = 175C | 1.35 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 40 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE =15V, IC = 40A | 55 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 1520 | - | pF | |
| Coes | Output Capacitance | 110 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 11 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 40A | 57 | - | nC | |
| Qge | Gate to Emitter charge | 6.5 | - | nC | ||
| Qgc | Gate to Collector charge | 17.5 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 40A, RG(on) =15,RG(off) =15 | 26 | - | ns | |
| tr | Turn-On Rise Time | 28 | - | ns | ||
| td(off) | Turn-Off DelayTime | 136 | - | ns | ||
| tf | Turn-Off Fall Time | 34 | - | ns | ||
| Eon | Turn-on energy | 0.9 | - | mJ | ||
| Eoff | Turn-off energy | 0.43 | - | mJ | ||
| Ets | Total switching energy | 1.33 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 40 A, di/dt = 400 A/S | 56 | - | ns | |
| Qrr | Reverse recovery charge | 0.27 | - | mC | ||
| Irrm | Peak reverse recovery current | 8.0 | - | A | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | Thermal resistance: junction - case IGBT | 0.6 | - | C/W | ||
| RJC | Thermal resistance: junction - case Diode | 0.65 | - | C/W | ||
| Device Summary | ||||||
| Device | VCE | IC (TC = 25 C) | VCE(SAT) (TVJ = 25 C, VGE = 15 V) | Package | Packing | Part Number |
| IGBT | 650V | 70 A | 1.6 V | TO-247 | 30PCS | NGTG35N65FL2WG |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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