Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 441W |
| Td(off) | 262ns |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | MBQ40T120QESTH-HXY |
| Package | TO-247 |
| Model Number | MBQ40T120QESTH-HXY |
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Product Specification
| Pd - Power Dissipation | 441W | Td(off) | 262ns |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns | Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ | Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | MBQ40T120QESTH-HXY |
| Package | TO-247 | Model Number | MBQ40T120QESTH-HXY |
The MBQ40T120QESTH is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power management.
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typ.) |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| PD | 441 | W | Power Dissipation @TC=25C |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF | 1.61 - 2.25 | V | Diode Forward Voltage |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=1200V, VGE=0V |
| IGES(F) | 200 | nA | Gate-Emitter Forward Leakage Current @VGE=+20V |
| IGES(R) | -200 | nA | Gate-Emitter Reverse Leakage Current @VGE=-20V |
| Cies | 3980 | pF | Input Capacitance |
| Coes | 157 | pF | Output Capacitance |
| Cres | 93 | pF | Reverse Transfer Capacitance |
| Qg | 346 | nC | Gate charge |
| Eon | 1.30 - 2.20 | mJ | Turn-On Switching Loss |
| Eoff | 2.30 - 3.70 | mJ | Turn-Off Switching Loss |
| Ets | 3.60 - 5.90 | mJ | Total Switching Loss |
| Trr | 94 - 125 | ns | Reverse Recovery Time |
| Qrr | 225 - 277 | nC | Reverse Recovery Charge |
| Irrm | 9.7 - 11.2 | A | Reverse Recovery Current |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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