Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 278W |
| Td(off) | 86ns |
| Td(on) | 19ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11.8pF |
| Input Capacitance(Cies) | 1.34nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Operating Temperature | -55℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 98pF |
| Reverse Recovery Time(trr) | 148ns |
| Switching Energy(Eoff) | 500uJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Description | 278W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T65HS1 |
| Package | TO-247 |
| Model Number | JNG40T65HS1 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 278W | Td(off) | 86ns |
| Td(on) | 19ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11.8pF | Input Capacitance(Cies) | 1.34nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA | Operating Temperature | -55℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 120A | Output Capacitance(Coes) | 98pF |
| Reverse Recovery Time(trr) | 148ns | Switching Energy(Eoff) | 500uJ |
| Turn-On Energy (Eon) | 1.3mJ | Description | 278W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T65HS1 | Package | TO-247 |
| Model Number | JNG40T65HS1 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as Motor control, general inverter, and other soft switching applications. This IGBT features 650V, 40A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=40A. It provides high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 80 | A | |||
| Continuous Collector Current (TC=100) | IC | 40 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 120 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 40 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 120 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 278 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 111 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.45 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 1.5 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A | - | 2.0 | 2.5 | V |
| Total Gate Charge | Qg | VCC=480V, VGE=15V, IC=40A | - | 594 | - | nC |
| Gate-Emitter Charge | Qge | - | 119 | - | nC | |
| Gate-Collector Charge | Qgc | - | 374 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V, VGE=15V, IC=40A, RG=15, Inductive Load | - | 19 | - | ns |
| Turn-on Rise Time | tr | - | 65 | - | ns | |
| Turn-off Delay Time | td(off) | - | 86 | - | ns | |
| Turn-off Fall Time | tf | - | 98 | - | ns | |
| Turn-on Switching Loss | Eon | - | 1.3 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 0.5 | - | mJ | |
| Total Switching Loss | Ets | - | 1.8 | - | mJ | |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f = 1MHz | - | 1340 | - | pF |
| Output Capacitance | Coes | - | 98 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 11.8 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=40A | - | 1.5 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V, IF= 40A, Rg=15 | - | 148 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 13.8 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 1055 | - | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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