Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 359ns |
| Pd - Power Dissipation | 1.091kW |
| Td(on) | 183ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 59.4pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.17V@2.24mA |
| Gate Charge(Qg) | 473nC |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 137ns |
| Switching Energy(Eoff) | 8.9mJ |
| Turn-On Energy (Eon) | 11.9mJ |
| Input Capacitance(Cies) | 16.191nF |
| Pulsed Current- Forward(Ifm) | 560A |
| Output Capacitance(Coes) | 407pF |
| Description | 1.091kW 1.2kV TO-247P Single IGBTs RoHS |
| Mfr. Part # | IKQ140N120CH7XKSA1-HXY |
| Package | TO-247P |
| Model Number | IKQ140N120CH7XKSA1-HXY |
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Product Specification
| Td(off) | 359ns | Pd - Power Dissipation | 1.091kW |
| Td(on) | 183ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 59.4pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.17V@2.24mA |
| Gate Charge(Qg) | 473nC | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 137ns | Switching Energy(Eoff) | 8.9mJ |
| Turn-On Energy (Eon) | 11.9mJ | Input Capacitance(Cies) | 16.191nF |
| Pulsed Current- Forward(Ifm) | 560A | Output Capacitance(Coes) | 407pF |
| Description | 1.091kW 1.2kV TO-247P Single IGBTs RoHS | Mfr. Part # | IKQ140N120CH7XKSA1-HXY |
| Package | TO-247P | Model Number | IKQ140N120CH7XKSA1-HXY |
The IKQ140N120CH7XKSA1 is a 1200V, 140A IGBT designed for high-efficiency applications. It features high input impedance, low switching losses, low saturation voltage (VCE(SAT)), and low conduction loss. This device is copacked with a fast recovery diode, offering rugged transient reliability and low EMI. It is suitable for applications such as string solar inverters and EV-charging.
| Parameter | Conditions | Value | Units |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Collector emitter voltage (VCE) | 1200 | V | |
| DC collector current (IC) | TC = 25C | 240 | A |
| DC collector current (IC) | TC = 100C | 140 | A |
| Pulsed collector current (ICM) | TC = 25C | 560 | A |
| Maximum Diode forward current (IF) | TC = 25C | 240 | A |
| Maximum Diode forward current (IF) | TC = 100C | 140 | A |
| Diode pulsed current (IFM) | TC = 25C | 560 | A |
| Gate-Emitter voltage (VGE) | TVJ = 25C | 20 | V |
| Power Dissipation (Ptot) | TC = 25C | 1091 | W |
| Power Dissipation (Ptot) | TC = 100C | 545 | W |
| Operating Junction Temperature Range (TVJ) | -40 to +175 | C | |
| Storage Temperature Range (TSTG) | -55 to +150 | C | |
| Thermal Resistance | |||
| IGBT Thermal resistance: junction - case (RJC) | IGBT | 0.11 | C/W |
| Diode Thermal resistance: junction - case (RJC) | Diode | 0.17 | C/W |
| Electrical Characteristics | |||
| Collector - Emitter Breakdown Voltage (V(BR)CES) | VGE = 0V , IC = 0.5mA | 1200 | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 140A | 1.55 | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 140A ,TVJ = 175C | 1.81 | V |
| Diode forward voltage (VF) | TVJ = 25 C, IF=40A | 2.01 | V |
| Diode forward voltage (VF) | VGE = 0V , IC = 140A | 2.01 | V |
| Diode forward voltage (VF) | VGE = 0V , IC = 140A ,TVJ = 175C | 2.19 | V |
| Gate-Emitter threshold voltage (VGE(th)) | VGE = VCE, IC = 2.24mA | 5.17 | V |
| Zero Gate voltage Collector current (ICES) | VCE = 1200V , VGE = 0V | 40.0 | mA |
| Gate-Emitter leakage current (IGES) | VGE = 20V , VCE = 0V | 100 | nA |
| Dynamic Characteristics | |||
| Input Capacitance (Cies) | VGE = 0V, VCE = 25V, f = 100k Hz | 16191 | pF |
| Output Capacitance (Coes) | 407 | pF | |
| Reverse Transfer Capacitance (Cres) | 59.4 | pF | |
| Gate input resistance (RG) | f = 1M Hz | 0.8 | |
| Gate Charge (Qg) | VGE = 0 to 15V VCE = 960V, IC = 140A | 473 | nC |
| Gate to Emitter charge (Qge) | 122 | nC | |
| Gate to Collector charge (Qgc) | 112 | nC | |
| Switching Characteristics (Tvj = 25 C) | |||
| Turn-On Delay Time (td(on)) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 183 | ns |
| Turn-On Rise Time (tr) | 241 | ns | |
| Turn-Off Delay Time (td(off)) | 359 | ns | |
| Turn-Off Fall Time (tf) | 221 | ns | |
| Turn-on energy (Eon) | 11.9 | mJ | |
| Turn-off energy (Eoff) | 8.9 | mJ | |
| Total switching energy (Ets) | 20.8 | mJ | |
| Switching Characteristics (Tvj = 175 C) | |||
| Turn-On Delay Time (td(on)) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 165 | ns |
| Turn-On Rise Time (tr) | 262 | ns | |
| Turn-Off Delay Time (td(off)) | 395 | ns | |
| Turn-Off Fall Time (tf) | 274 | ns | |
| Turn-on energy (Eon) | 12.8 | mJ | |
| Turn-off energy (Eoff) | 10.1 | mJ | |
| Total switching energy (Ets) | 22.9 | mJ | |
| Diode Recovery Characteristics (Tvj = 25 C) | |||
| Reverse recovery time (Trr) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 137 | ns |
| Reverse recovery charge (Qrr) | 0.81 | mC | |
| Peak reverse recovery current (Irrm) | 9.3 | A | |
| Reverse recovery energy (Erec) | 9.3 | mJ | |
| Diode Recovery Characteristics (Tvj = 175 C) | |||
| Reverse recovery time (Trr) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 511 | ns |
| Reverse recovery charge (Qrr) | 5.4 | mC | |
| Peak reverse recovery current (Irrm) | 17.5 | A | |
| Reverse recovery energy (Erec) | 1.6 | mJ | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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