| Td(off) | 300ns |
| Pd - Power Dissipation | 335W |
| Td(on) | 85ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 0.285nF |
| Input Capacitance(Cies) | 9.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@2.4mA |
| Operating Temperature | -40℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 300A |
| Switching Energy(Eoff) | 4.15mJ |
| Turn-On Energy (Eon) | 1.2mJ |
| Description | 335W 650V Through Hole,62.8x56.7mm Single IGBTs RoHS |
| Mfr. Part # | F3L150R07W2E3_B11 |
| Package | Through Hole,62.8x56.7mm |
| Model Number | F3L150R07W2E3_B11 |
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Product Specification
| Td(off) | 300ns | Pd - Power Dissipation | 335W |
| Td(on) | 85ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 0.285nF | Input Capacitance(Cies) | 9.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@2.4mA | Operating Temperature | -40℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 300A | Switching Energy(Eoff) | 4.15mJ |
| Turn-On Energy (Eon) | 1.2mJ | Description | 335W 650V Through Hole,62.8x56.7mm Single IGBTs RoHS |
| Mfr. Part # | F3L150R07W2E3_B11 | Package | Through Hole,62.8x56.7mm |
| Model Number | F3L150R07W2E3_B11 |
The F3L150R07W2E3_B11 is an EasyPACK IGBT module featuring Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode with PressFIT and NTC. It offers increased blocking voltage capability to 650V, low inductive design, low switching losses, and low VCEsat. Its applications include 3-Level, Solar, and UPS systems. The module utilizes an Al2O3 substrate with low thermal resistance and a compact design with PressFIT connection technology and integrated mounting clamps for robust mounting.
| Component | Parameter | Value | Unit | Conditions |
| IGBT, Inverter | VCES | 650 | V | Tvj = 25C |
| IC nom | 150 | A | TC = 25C, Tvj max = 175C | |
| ICRM | 300 | A | tP = 1 ms | |
| Ptot | 335 | W | TC = 25C, Tvj max = 175C | |
| VGES | +/-20 | V | ||
| VCEsat | 1.45 - 1.90 | V | IC = 150 A, VGE = 15 V | |
| VGEth | 4.9 - 6.5 | V | IC = 2,40 mA, VCE = VGE, Tvj = 25C | |
| QG | 1.60 | C | VGE = -15 V ... +15 V | |
| Diode, Inverter | VRRM | 650 | V | Tvj = 25C |
| IF | 150 | A | ||
| IFRM | 300 | A | tP = 1 ms | |
| It | 1700 - 1450 | As | VR = 0 V, tP = 10 ms | |
| VF | 1.45 - 1.95 | V | IF = 150 A, VGE = 0 V | |
| RthJC | 0.55 - 0.60 | K/W | per Diode | |
| Diode, D5-D6 | VRRM | 650 | V | Tvj = 25C |
| IF | 150 | A | ||
| IFRM | 300 | A | tP = 1 ms | |
| It | 2450 - 2150 | As | VR = 0 V, tP = 10 ms | |
| VF | 1.45 - 1.95 | V | IF = 150 A, VGE = 0 V | |
| RthJC | 0.50 - 0.55 | K/W | per Diode | |
| NTC-Thermistor | R25 | 5.00 | k | TC = 25C |
| R/R | -5 - 5 | % | TC = 100C, R100 = 493 | |
| P25 | 20.0 | mW | TC = 25C | |
| B25/50 | 3375 | K | ||
| Module | VISOL | 2.5 | kV | RMS, f = 50 Hz, t = 1 min. |
| LsCE | 15 | nH | ||
| RCC'+EE' | 2.00 | m | TC = 25C, per switch |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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