Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 216ns |
| Pd - Power Dissipation | 600W |
| Td(on) | 55ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 42pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Gate Charge(Qg) | 200nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 380ns |
| Switching Energy(Eoff) | 1.8mJ |
| Turn-On Energy (Eon) | 2.65mJ |
| Input Capacitance(Cies) | 6.42nF |
| Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 195pF |
| Description | 600W 1.2kV TO-247P Single IGBTs RoHS |
| Mfr. Part # | APT50GT120B2RDQ2G-HXY |
| Package | TO-247P |
| Model Number | APT50GT120B2RDQ2G-HXY |
View Detail Information
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Product Specification
| Td(off) | 216ns | Pd - Power Dissipation | 600W |
| Td(on) | 55ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 42pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Gate Charge(Qg) | 200nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 380ns | Switching Energy(Eoff) | 1.8mJ |
| Turn-On Energy (Eon) | 2.65mJ | Input Capacitance(Cies) | 6.42nF |
| Pulsed Current- Forward(Ifm) | 200A | Output Capacitance(Coes) | 195pF |
| Description | 600W 1.2kV TO-247P Single IGBTs RoHS | Mfr. Part # | APT50GT120B2RDQ2G-HXY |
| Package | TO-247P | Model Number | APT50GT120B2RDQ2G-HXY |
The APT50GT120B2RDQ2G is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, and Solar String Inverters.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 1200 | V | |||
| IC | DC collector current(1) | TC = 25C | 100 | A | ||
| TC = 100C | 50 | A | ||||
| ICM | Pulsed collector current | TC = 25C | 200 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 100 | A | ||
| TC = 100C | 50 | A | ||||
| IFM | Diode pulsed current | TC = 25C | 200 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 600 | W | ||
| TC = 100C | 300 | W | ||||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | 1.9 | 2.3 | V | |
| VGE = 15V , IC = 50A ,TVJ = 175C | 2.8 | - | V | |||
| VF | Diode forward voltage | VGE = 0V , IC = 50A | 2.7 | - | V | |
| VGE = 0V , IC = 50A ,TVJ = 175C | 2.4 | - | V | |||
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 350.0 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE = 20V, IC = 50A | 30 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 6420 | - | pF | |
| Coes | Output Capacitance | 195 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 42 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 50A | 200 | - | nC | |
| Qge | Gate to Emitter charge | 46 | - | nC | ||
| Qgc | Gate to Collector charge | 75 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 600V IC= 50A, RG(off) = 10 | 55 | - | ns | |
| tr | Turn-On Rise Time | 32 | - | ns | ||
| td(off) | Turn-Off DelayTime | 216 | - | ns | ||
| tf | Turn-Off Fall Time | 38 | - | ns | ||
| Eon | Turn-on energy | 2.65 | - | mJ | ||
| Eoff | Turn-off energy | 1.8 | - | mJ | ||
| Ets | Total switching energy | 4.45 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 600 V, IF = 50 A, di/dt = 600 A/S | 380 | - | ns | |
| Qrr | Reverse recovery charge | 2.31 | - | mC | ||
| Irrm | Peak reverse recovery current | 15.5 | - | A | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case IGBT | 0.25 | - | C/W | ||
| RJC | Diode Thermal resistance: junction - case Diode | 0.49 | - | C/W | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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