Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 324ns |
| Td(on) | 171ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.076nF |
| Input Capacitance(Cies) | 21.7nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@2.5mA |
| Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 200A |
| Switching Energy(Eoff) | 6.42mJ |
| Turn-On Energy (Eon) | 10.4mJ |
| Description | IGBT 1.2kV 100A Through Hole,107.5x45mm |
| Mfr. Part # | FP100R12N2T7 |
| Package | Through Hole,107.5x45mm |
| Model Number | FP100R12N2T7 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Td(off) | 324ns | Td(on) | 171ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Reverse Transfer Capacitance (Cres) | 0.076nF |
| Input Capacitance(Cies) | 21.7nF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@2.5mA |
| Operating Temperature | -40℃~+175℃ | Pulsed Current- Forward(Ifm) | 200A |
| Switching Energy(Eoff) | 6.42mJ | Turn-On Energy (Eon) | 10.4mJ |
| Description | IGBT 1.2kV 100A Through Hole,107.5x45mm | Mfr. Part # | FP100R12N2T7 |
| Package | Through Hole,107.5x45mm | Model Number | FP100R12N2T7 |
The FP100R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diodes with an NTC temperature sensor. It offers electrical advantages such as low VCEsat and overload operation up to 175C. Mechanically, it features an Al2O3 substrate with low thermal resistance, a copper base plate, and solder contact technology. This module is qualified for industrial applications.
| Component | Parameter | Symbol | Note or test condition | Values | Unit |
| Module | Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 2.5 | kV |
| Comparative tracking index | CTI | > 200 | |||
| Stray inductance module | LsCE | 35 | nH | ||
| Module lead resistance, terminals - chip | RAA'+CC' | TC=25C, per switch | 2.5 | m | |
| Module lead resistance, terminals - chip | RCC'+EE' | TC=25C, per switch | 4.3 | m | |
| Storage temperature | Tstg | -40 to 125 | C | ||
| Mounting torque for module mounting | M | M5, Screw | 3 to 6 | Nm | |
| Weight | G | 180 | g | ||
| Current under continuous operation (main AC/DC) | Limited to 80 | A rms | |||
| Current under continuous operation (connector pin) | Limited to 50 | A rms | |||
| Temperature under overload operation | Tvj op | > 150C allowed | 175 | C | |
| IGBT, Inverter | Collector-emitter voltage | VCES | Tvj = 25 C | 1200 | V |
| Continous DC collector current | ICDC | Tvj max = 175 C, TC = 95 C | 100 | A | |
| Repetitive peak collector current | ICRM | tP = 1 ms | 200 | A | |
| Gate-emitter peak voltage | VGES | 20 | V | ||
| Collector-emitter saturation voltage | VCE sat | IC = 100 A, VGE = 15 V | 1.50 (Tvj=25C), 1.64 (Tvj=125C), 1.72 (Tvj=175C) | V | |
| Gate threshold voltage | VGEth | IC = 2.5 mA, VCE = VGE, Tvj = 25 C | 5.15 to 6.45 | V | |
| Gate charge | QG | VGE = 15 V, VCE = 600 V | 1.8 | C | |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 21.7 | nF | |
| Reverse transfer capacitance | Cres | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 0.076 | nF | |
| Collector-emitter cut-off current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 0.01 | mA | |
| Turn-on delay time | tdon | IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 4.3 | 0.171 (Tvj=25C), 0.185 (Tvj=125C), 0.190 (Tvj=175C) | s | |
| Rise time | tr | IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 4.3 | 0.050 (Tvj=25C), 0.055 (Tvj=125C), 0.058 (Tvj=175C) | s | |
| Turn-off delay time | tdoff | IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 4.3 | 0.324 (Tvj=25C), 0.433 (Tvj=125C), 0.494 (Tvj=175C) | s | |
| Fall time | tf | IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 4.3 | 0.093 (Tvj=25C), 0.183 (Tvj=125C), 0.245 (Tvj=175C) | s | |
| Turn-on energy loss per pulse | Eon | IC = 100 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGon = 4.3 | 10.4 (Tvj=25C), 15.3 (Tvj=125C), 17.6 (Tvj=175C) | mJ | |
| Diode, Inverter | Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continous DC forward current | IF | 100 | A | ||
| Repetitive peak forward current | IFRM | tP = 1 ms | 200 | A | |
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 1000 (Tvj=125C), 930 (Tvj=175C) | As | |
| Forward voltage | VF | IF = 100 A | 1.72 (Tvj=25C), 1.59 (Tvj=125C), 1.52 (Tvj=175C) | V | |
| Peak reverse recovery current | IRM | VR = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1450 A/s | 58.2 (Tvj=25C), 74.3 (Tvj=125C), 82.4 (Tvj=175C) | A | |
| Recovered charge | Qr | VR = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1450 A/s | 9.83 (Tvj=25C), 15.9 (Tvj=125C), 20.1 (Tvj=175C) | C | |
| Diode, Rectifier | Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1600 | V |
| Maximum RMS forward current per chip | IFRMSM | TC = 110 C | 100 | A | |
| Maximum RMS current at rectifier output | IRMSM | TC = 110 C | 100 | A | |
| Surge forward current | IFSM | tP = 10 ms | 745 (Tvj=25C), 515 (Tvj=150C) | A | |
| I2t - value | I2t | tP = 10 ms | 2780 (Tvj=25C), 1330 (Tvj=150C) | As | |
| Forward voltage | VF | IF = 100 A, Tvj = 150 C | 1.16 | V | |
| NTC-Thermistor | Temperature under switching conditions | Tvj op | -40 to 175 | C | |
| Temperature under overload conditions | Tvj op | Allowed for overload | > 150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!