| Td(off) | 190ns |
| Td(on) | 35ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.017nF |
| Input Capacitance(Cies) | 4.77nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@0.525mA |
| Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 50A |
| Switching Energy(Eoff) | 1.68mJ |
| Turn-On Energy (Eon) | 1.78mJ |
| Description | 1.2kV Through Hole,62.8x56.7mm Single IGBTs RoHS |
| Mfr. Part # | FP25R12W2T7 |
| Package | Through Hole,62.8x56.7mm |
| Model Number | FP25R12W2T7 |
View Detail Information
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Product Specification
| Td(off) | 190ns | Td(on) | 35ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Reverse Transfer Capacitance (Cres) | 0.017nF |
| Input Capacitance(Cies) | 4.77nF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@0.525mA |
| Operating Temperature | -40℃~+175℃ | Pulsed Current- Forward(Ifm) | 50A |
| Switching Energy(Eoff) | 1.68mJ | Turn-On Energy (Eon) | 1.78mJ |
| Description | 1.2kV Through Hole,62.8x56.7mm Single IGBTs RoHS | Mfr. Part # | FP25R12W2T7 |
| Package | Through Hole,62.8x56.7mm | Model Number | FP25R12W2T7 |
The EasyPIM module is designed for auxiliary inverters, air conditioning systems, and motor drives. It features TRENCHSTOP IGBT7 technology for low VCEsat and overload operation up to 175C. The module boasts a 2.5 kV AC 1min insulation, an Al2O3 substrate with low thermal resistance, high power density, and a compact design utilizing solder contact technology.
| Component | Parameter | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| IGBT, Inverter | VCES | 1200 | V | Tvj = 25C | ||
| ICDC | 25 | A | TH = 105C, Tvj max = 175C | |||
| ICRM | 50 | A | tP = 1 ms | |||
| VGES | +/-20 | V | ||||
| VCE sat | 1.60 | 1.82 | V | IC = 25 A, VGE = 15 V | ||
| VGEth | 5.15 | 5.80 | 6.45 | V | IC = 0,525 mA, VCE = VGE, Tvj = 25C | |
| QG | 0.395 | C | VGE = -15 / 15 V, VCE = 600 V | |||
| RGint | 0.0 | Tvj = 25C | ||||
| Cies | 4.77 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |||
| Cres | 0.017 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |||
| ICES | 0.0056 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C | |||
| IGES | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C | |||
| Eon | 1.78 | 3.18 | mJ | IC = 25 A, VCE = 600 V, L = 35 nH, di/dt = 650 A/s, VGE = -15 / 15 V, RGon = 6,2 | ||
| Eoff | 1.68 | 3.20 | mJ | IC = 25 A, VCE = 600 V, L = 35 nH, du/dt = 3000 V/s, VGE = -15 / 15 V, RGoff = 6,2 | ||
| Diode, Inverter | VRRM | 1200 | V | Tvj = 25C | ||
| IF | 25 | A | ||||
| IFRM | 50 | A | tP = 1 ms | |||
| It | 63.0 | 72.5 | As | VR = 0 V, tP = 10 ms | ||
| VF | 1.63 | 1.83 | V | IF = 25 A, VGE = 0 V | ||
| Erec | 0.94 | 1.85 | mJ | IF = 25 A, - diF/dt = 650 A/s, VR = 600 V, VGE = -15 V | ||
| Diode, Rectifier | VRRM | 1600 | V | Tvj = 25C | ||
| IFRMSM | 50 | A | TH = 100C | |||
| IFSM | 370 | 450 | A | tp = 10 ms | ||
| It | 685 | 1010 | As | tp = 10 ms | ||
| VF | 0.88 | V | Tvj = 150C, IF = 25 A | |||
| IR | 1.00 | mA | Tvj = 150C, VR = 1600 V | |||
| RthJH | 1.36 | K/W | per diode | |||
| IGBT, Brake-Chopper | VCES | 1200 | V | Tvj = 25C | ||
| ICDC | 25 | A | TH = 105C, Tvj max = 175C | |||
| ICRM | 50 | A | tP = 1 ms | |||
| VGES | +/-20 | V | ||||
| VCE sat | 1.60 | 1.82 | V | IC = 25 A, VGE = 15 V | ||
| VGEth | 5.15 | 5.80 | 6.45 | V | IC = 0,525 mA, VCE = VGE, Tvj = 25C | |
| QG | 0.395 | C | VGE = -15 / 15 V, VCE = 600 V | |||
| RGint | 0.0 | Tvj = 25C | ||||
| Cies | 4.77 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |||
| Cres | 0.017 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |||
| ICES | 0.0056 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C | |||
| IGES | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C | |||
| Eon | 1.66 | 2.94 | mJ | IC = 25 A, VCE = 600 V, L = 35 nH, di/dt = 650 A/s, VGE = -15 / 15 V, RGon = 6,2 | ||
| Eoff | 1.73 | 3.32 | mJ | IC = 25 A, VCE = 600 V, L = 35 nH, du/dt = 3000 V/s, VGE = -15 / 15 V, RGoff = 6,2 | ||
| Diode, Brake-Chopper | VRRM | 1200 | V | Tvj = 25C | ||
| IF | 10 | A | ||||
| IFRM | 20 | A | tP = 1 ms | |||
| It | As | VR = 0 | ||||
| RthJH | 1.73 | K/W | per diode | |||
| Tvj op | -40 | 175 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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