Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 329W |
| Td(off) | 435ns |
| Td(on) | 94ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 49pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Gate Charge(Qg) | 243nC |
| Operating Temperature | -40℃~+150℃ |
| Reverse Recovery Time(trr) | 1.02us |
| Switching Energy(Eoff) | 3.6mJ |
| Turn-On Energy (Eon) | 4.3mJ |
| Input Capacitance(Cies) | 7.33nF |
| Pulsed Current- Forward(Ifm) | 150A |
| Output Capacitance(Coes) | 219pF |
| Description | 329W 1.2kV TO264 Single IGBTs RoHS |
| Mfr. Part # | JNG50T120LIS2 |
| Package | TO264 |
| Model Number | JNG50T120LIS2 |
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Product Specification
| Pd - Power Dissipation | 329W | Td(off) | 435ns |
| Td(on) | 94ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 49pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Gate Charge(Qg) | 243nC | Operating Temperature | -40℃~+150℃ |
| Reverse Recovery Time(trr) | 1.02us | Switching Energy(Eoff) | 3.6mJ |
| Turn-On Energy (Eon) | 4.3mJ | Input Capacitance(Cies) | 7.33nF |
| Pulsed Current- Forward(Ifm) | 150A | Output Capacitance(Coes) | 219pF |
| Description | 329W 1.2kV TO264 Single IGBTs RoHS | Mfr. Part # | JNG50T120LIS2 |
| Package | TO264 | Model Number | JNG50T120LIS2 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.
| Parameter | Conditions | Value | Units |
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | + 20 | V | |
| Continuous Collector Current (IC) | TC=25 | 100 | A |
| Continuous Collector Current (IC) | TC=100 | 50 | A |
| Pulsed Collector Current (ICM) | Note 1 | 150 | A |
| Diode Continuous Forward Current (IF) | TC=100 | 50 | A |
| Diode Maximum Forward Current (IFM) | Note 1 | 150 | A |
| Short Circuit Withstand Time (tsc) | 10 | us | |
| Maximum Power Dissipation (PD) | TC=25 | 329 | W |
| Maximum Power Dissipation (PD) | TC=100 | 131 | W |
| Operating Junction Temperature Range (TJ) | -40 to +150 | ||
| Storage Temperature Range (TSTG) | -40 to +150 | ||
| Thermal Resistance, Junction to case (Rth j-c) | for IGBT | 0.38 | / W |
| Thermal Resistance, Junction to case (Rth j-c) | for Diode | 0.5 | / W |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 25 | / W | |
| Collector-Emitter Breakdown Voltage (BVCES) | VGE= 0V, IC= 250uA | 1200 | V |
| Collector-Emitter Leakage Current (ICES) | VCE= 1200V, VGE= 0V | - | 100 uA |
| Gate Leakage Current, Forward (IGES) | VGE= + 20V, VCE= 0V | - | + 100 nA |
| Gate Threshold Voltage (VGE(th)) | VGE= VCE, IC= 250uA | 4.5 - 6.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC= 50A | 1.8 | V |
| Total Gate Charge (Qg) | VCC=960V VGE=15V IC=50A | 243 | nC |
| Gate-Emitter Charge (Qge) | 64 | nC | |
| Gate-Collector Charge (Qgc) | 104 | nC | |
| Turn-on Delay Time (td(on)) | VCC=600V VGE=15V IC=50A RG=15 Inductive Load TC=25 | 94 | ns |
| Turn-on Rise Time (tr) | 98 | ns | |
| Turn-off Delay Time (td(off)) | 435 | ns | |
| Turn-off Fall Time (tf) | 187 | ns | |
| Turn-on Switching Loss (Eon) | 4.3 | mJ | |
| Turn-off Switching Loss (Eoff) | 3.6 | mJ | |
| Total Switching Loss (Ets) | 7.9 | mJ | |
| Input Capacitance (Cies) | VCE=25V VGE=0V f = 100KHz | 7330 | pF |
| Output Capacitance (Coes) | 219 | pF | |
| Reverse Transfer Capacitance (Cres) | 49 | pF | |
| Diode Forward Voltage (VF) | IF=50A | 2.2 - 3.5 | V |
| Diode Reverse Recovery Time (trr) | VCE = 600V IF= 50A diF/dt = 900A/us | 1020 | ns |
| Diode peak Reverse Recovery Current (IRR) | 28 | A | |
| Diode Reverse Recovery Charge (QRR) | 6312 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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