Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 250W |
| Td(off) | 136ns |
| Td(on) | 26ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Gate Charge(Qg) | 57nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 56ns |
| Switching Energy(Eoff) | 430uJ |
| Turn-On Energy (Eon) | 900uJ |
| Input Capacitance(Cies) | 1.52nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 110pF |
| Description | 250W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | AOK40B65HQ2 |
| Package | TO-247 |
| Model Number | AOK40B65HQ2 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 250W | Td(off) | 136ns |
| Td(on) | 26ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Gate Charge(Qg) | 57nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 56ns | Switching Energy(Eoff) | 430uJ |
| Turn-On Energy (Eon) | 900uJ | Input Capacitance(Cies) | 1.52nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 110pF |
| Description | 250W 650V TO-247 Single IGBTs RoHS | Mfr. Part # | AOK40B65HQ2 |
| Package | TO-247 | Model Number | AOK40B65HQ2 |
The AOK40B65HQ2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-chargers, and solar string inverters.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current | TC = 25C | 70 | A | ||
| IC | DC collector current | TC = 100C | 40 | A | ||
| ICM | Pulsed collector current | TC = 25C | 160 | A | ||
| IF | Maximum Diode forward current | TC = 25C | 70 | A | ||
| IF | Maximum Diode forward current | TC = 100C | 40 | A | ||
| IFM | Diode pulsed current | TC = 25C | 160 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | TVJ = 25C (tp 10s, D < 0.010) | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 125 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case | IGBT | 0.6 | C/W | ||
| RJC | Diode Thermal resistance: junction - case | Diode | 0.65 | C/W | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 125C | 1.85 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 175C | 1.95 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A | 1.8 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A ,TVJ = 125C | 1.5 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 40A ,TVJ = 175C | 1.35 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | - | 40 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| gfs | Transconductance | VGE =15V, IC = 40A | - | 55 | - | S |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | - | 1520 | - | pF |
| Coes | Output Capacitance | - | 110 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 11 | - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 40A | - | 57 | - | nC |
| Qge | Gate to Emitter charge | - | 6.5 | - | nC | |
| Qgc | Gate to Collector charge | - | 17.5 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 40A, RG(on) =15,RG(off) =15 | - | 26 | - | ns |
| tr | Turn-On Rise Time | - | 28 | - | ns | |
| td(off) | Turn-Off DelayTime | - | 136 | - | ns | |
| tf | Turn-Off Fall Time | - | 34 | - | ns | |
| Eon | Turn-on energy | - | 0.9 | - | mJ | |
| Eoff | Turn-off energy | - | 0.43 | - | mJ | |
| Ets | Total switching energy | - | 1.33 | - | mJ | |
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 40 A, di/dt = 400 A/S | - | 56 | - | ns |
| Qrr | Reverse recovery charge | - | 0.27 | - | mC | |
| Irrm | Peak reverse recovery current | - | 8.0 | - | A | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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