Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 250W |
| Td(off) | 110ns |
| Td(on) | 17ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 1.916nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.25mA |
| Gate Charge(Qg) | 71nC@15V |
| Reverse Recovery Time(trr) | 56ns |
| Switching Energy(Eoff) | 510uJ |
| Turn-On Energy (Eon) | 1.35mJ |
| Description | IGBT 650V 80A 250W Through Hole TO-247 |
| Mfr. Part # | IGW50N60TP-HXY |
| Package | TO-247 |
| Model Number | IGW50N60TP-HXY |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 250W | Td(off) | 110ns |
| Td(on) | 17ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 1.916nF@25V | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.25mA |
| Gate Charge(Qg) | 71nC@15V | Reverse Recovery Time(trr) | 56ns |
| Switching Energy(Eoff) | 510uJ | Turn-On Energy (Eon) | 1.35mJ |
| Description | IGBT 650V 80A 250W Through Hole TO-247 | Mfr. Part # | IGW50N60TP-HXY |
| Package | TO-247 | Model Number | IGW50N60TP-HXY |
The IGW50N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 80 | A | ||
| IC | DC collector current(1) | TC = 100C | 50 | A | ||
| ICM | Pulsed collector current | TC = 25C | 200 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 80 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 50 | A | ||
| IFM | Diode pulsed current | TC = 25C | 200 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010), TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 129 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case | IGBT | 0.65 | C/W | ||
| RJC | Diode Thermal resistance: junction - case | Diode | 0.58 | C/W | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 125C | 1.93 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 175C | 2.0 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A | 1.85 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 125C | 1.6 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 175C | 1.45 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | - | 50 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| gfs | Transconductance | VGE = 20V, IC = 50A | - | 56 | - | S |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | - | 1916 | - | pF |
| Coes | Output Capacitance | - | 139 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 13 | - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V, VCE = 520V, IC = 50A | - | 71 | - | nC |
| Qge | Gate to Emitter charge | - | 10 | - | nC | |
| Qgc | Gate to Collector charge | - | 21 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V, IC= 50A, RG(off) = 12,RG(on) = 12 | - | 17 | - | ns |
| tr | Turn-On Rise Time | - | 30 | - | ns | |
| td(off) | Turn-Off DelayTime | - | 110 | - | ns | |
| tf | Turn-Off Fall Time | - | 34 | - | ns | |
| Eon | Turn-on energy | - | 1.35 | - | mJ | |
| Eoff | Turn-off energy | - | 0.51 | - | mJ | |
| Ets | Total switching energy | - | 1.86 | - | mJ | |
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 50 A, di/dt = 400 A/S | - | 56 | - | ns |
| Qrr | Reverse recovery charge | - | 0.27 | - | mC | |
| Irrm | Peak reverse recovery current | - | 8 | - | A | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!