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  3. IGBT device Infineon IKP20N65F5 with fast switching characteristics and
China IGBT device Infineon IKP20N65F5 with fast switching characteristics and
China IGBT device Infineon IKP20N65F5 with fast switching characteristics and

  1. China IGBT device Infineon IKP20N65F5 with fast switching characteristics and

IGBT device Infineon IKP20N65F5 with fast switching characteristics and

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Td(off) 165ns
Pd - Power Dissipation 125W
Td(on) 20ns
Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 5pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 3.2V@0.2mA
Gate Charge(Qg) 48nC@15V
Operating Temperature -40℃~+175℃
Reverse Recovery Time(trr) 53ns
Switching Energy(Eoff) 60uJ
Turn-On Energy (Eon) 160uJ
Input Capacitance(Cies) 1.2nF
Pulsed Current- Forward(Ifm) 60A
Output Capacitance(Coes) 30pF
Description 125W 650V TO-220-3 Single IGBTs RoHS
Mfr. Part # IKP20N65F5
Package TO-220-3
Model Number IKP20N65F5

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  1. Product Details
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Product Specification

Td(off) 165ns Pd - Power Dissipation 125W
Td(on) 20ns Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 5pF Gate-Emitter Threshold Voltage (Vge(th)@Ic) 3.2V@0.2mA
Gate Charge(Qg) 48nC@15V Operating Temperature -40℃~+175℃
Reverse Recovery Time(trr) 53ns Switching Energy(Eoff) 60uJ
Turn-On Energy (Eon) 160uJ Input Capacitance(Cies) 1.2nF
Pulsed Current- Forward(Ifm) 60A Output Capacitance(Coes) 30pF
Description 125W 650V TO-220-3 Single IGBTs RoHS Mfr. Part # IKP20N65F5
Package TO-220-3 Model Number IKP20N65F5

Product Overview

The IKP20N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft anti-parallel diode. This DuoPack IGBT offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, and low Qg. It is designed for applications requiring high-speed switching and is qualified according to JEDEC standards. The product is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM 5
  • Diode Type: RAPID 1
  • Certifications: JEDEC qualified, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCEICVCEsat (Tvj=25C)TvjmaxMarkingPackage
IKP20N65F5650V20A1.6V175CK20EF5PG-TO220-3

Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE650V
DC collector current, TC = 25CIC42.0A
DC collector current, TC = 100CIC21.0A
Pulsed collector currentICpuls60.0A
Turn off safe operating area--60.0A
Diode forward current, TC = 25CIF20.0A
Diode forward current, TC = 100CIF10.0A
Diode pulsed currentIFpuls60.0A
Gate-emitter voltageVGE20V
Transient Gate-emitter voltage-30V
Power dissipation, TC = 25CPtot125.0W
Power dissipation, TC = 100CPtot63.0W
Operating junction temperatureTvj-40...+175C
Storage temperatureTstg-55...+150C
Soldering temperature-260C
Mounting torqueM30.6Nm

Thermal Resistance

ParameterSymbolConditionsMax. ValueUnit
IGBT thermal resistance, junction - caseRth(j-c)-1.20K/W
Diode thermal resistance, junction - caseRth(j-c)-2.20K/W
Thermal resistance junction - ambientRth(j-a)-62K/W

Electrical Characteristics (Tvj = 25C, unless otherwise specified)

ParameterSymbolConditionsMin.Typ.Max.Unit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.20mA650--V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 20.0A-1.602.10V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 20.0A, Tvj = 125C-1.80-V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 20.0A, Tvj = 175C-1.90-V
Diode forward voltageVFVGE = 0V, IF = 10.0A-1.451.80V
Diode forward voltageVFVGE = 0V, IF = 10.0A, Tvj = 125C-1.40-V
Diode forward voltageVFVGE = 0V, IF = 10.0A, Tvj = 175C-1.40-V
Gate-emitter threshold voltageVGE(th)IC = 0.20mA, VCE = VGE3.24.04.8V
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 25C--40.0A
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 175C--4000.0A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V--100nA
TransconductancegfsVCE = 20V, IC = 20.0A-24.0-S

Dynamic Characteristics (Tvj = 25C, unless otherwise specified)

ParameterSymbolConditionsMin.Typ.Max.Unit
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz-1200-pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz-30-pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz-5-pF
Gate chargeQGVCC = 520V, IC = 20.0A, VGE = 15V-48.0-nC
Internal emitter inductanceLEmeasured 5mm from case-7.0-nH

Switching Characteristics (Inductive Load)

ParameterSymbolConditionsMin.Typ.Max.Unit
Turn-on delay timetd(on)Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-20-ns
Rise timetrTvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-11-ns
Turn-off delay timetd(off)Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-165-ns
Fall timetfTvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-17-ns
Turn-on energyEonTvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.16-mJ
Turn-off energyEoffTvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.06-mJ
Total switching energyEtsTvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.22-mJ
Turn-on delay timetd(on)Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-18-ns
Rise timetrTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-3-ns
Turn-off delay timetd(off)Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-170-ns
Fall timetfTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-30-ns
Turn-on energyEonTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.04-mJ
Turn-off energyEoffTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.02-mJ
Total switching energyEtsTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.06-mJ
Diode reverse recovery timetrrTvj = 25C, VR = 400V, IF = 10.0A, diF/dt = 1300A/s-53-ns
Diode reverse recovery chargeQrrTvj = 25C, VR = 400V, IF = 10.0A, diF/dt = 1300A/s-0.28-C
Diode peak reverse recovery currentIrrmTvj = 25C, VR = 400V, IF = 10.0A, diF/dt = 1300A/s-10.5-A
Diode peak rate of fall of reverse recovery currentdirr/dtTvj = 25C, VR = 400V, IF = 10.0A, diF/dt = 1300A/s--235-A/s
Diode reverse recovery timetrrTvj = 25C, VR = 400V, IF = 2.0A, diF/dt = 1000A/s-25-ns
Diode reverse recovery chargeQrrTvj = 25C, VR = 400V, IF = 2.0A, diF/dt = 1000A/s-0.12-C
Diode peak reverse recovery currentIrrmTvj = 25C, VR = 400V, IF = 2.0A, diF/dt = 1000A/s-8.1-A
Diode peak rate of fall of reverse recovery currentdirr/dtTvj = 25C, VR = 400V, IF = 2.0A, diF/dt = 1000A/s--630-A/s
Turn-on delay timetd(on)Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-19-ns
Rise timetrTvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-13-ns
Turn-off delay timetd(off)Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-200-ns
Fall timetfTvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-11-ns
Turn-on energyEonTvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.26-mJ
Turn-off energyEoffTvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.11-mJ
Total switching energyEtsTvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.37-mJ
Turn-on delay timetd(on)Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-16-ns
Rise timetrTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-4-ns
Turn-off delay timetd(off)Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-230-ns
Fall timetfTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-43-ns
Turn-on energyEonTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.07-mJ
Turn-off energyEoffTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.02-mJ
Total switching energyEtsTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF-0.09-mJ
Diode reverse recovery timetrrTvj = 150C, VR = 400V, IF = 10.0A, diF/dt = 1000A/s-87-ns
Diode reverse recovery chargeQrrTvj = 150C, VR = 400V, IF = 10.0A, diF/dt = 1000A/s-0.63-C
Diode peak reverse recovery currentIrrmTvj = 150C, VR = 400V, IF = 10.0A, diF/dt = 1000A/s-13.1-A
Diode peak rate of fall of reverse recovery currentdirr/dtTvj = 150C, VR = 400V, IF = 10.0A, diF/dt = 1000A/s--186-A/s
Diode reverse recovery timetrrTvj = 150C, VR = 400V, IF = 2.0A, diF/dt = 800A/s-45-ns
Diode reverse recovery chargeQrrTvj = 150C, VR = 400V, IF = 2.0A, diF/dt = 800A/s-0.29-C
Diode peak reverse recovery currentIrrmTvj = 150C, VR = 400V, IF = 2.0A, diF/dt = 800A/s-11.3-A
Diode peak rate of fall of reverse recovery currentdirr/dtTvj = 150C, VR = 400V, IF = 2.0A, diF/dt = 800A/s--440-A/s

Applications

  • Solar converters
  • Uninterruptible power supplies
  • Welding converters
  • Mid to high range switching frequency converters

2410121744_Infineon-IKP20N65F5_C536194.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory

  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification：

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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