Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 131ns |
| Pd - Power Dissipation | 175W |
| Td(on) | 19ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 11pF |
| Input Capacitance(Cies) | 1.32nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Operating Temperature | -55℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 45A |
| Output Capacitance(Coes) | 57pF |
| Reverse Recovery Time(trr) | 130ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.1mJ |
| Description | 175W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG15T120HIRU2 |
| Package | TO-247 |
| Model Number | JNG15T120HIRU2 |
View Detail Information
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Product Specification
| Td(off) | 131ns | Pd - Power Dissipation | 175W |
| Td(on) | 19ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 11pF | Input Capacitance(Cies) | 1.32nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | Operating Temperature | -55℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 45A | Output Capacitance(Coes) | 57pF |
| Reverse Recovery Time(trr) | 130ns | Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.1mJ | Description | 175W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG15T120HIRU2 | Package | TO-247 |
| Model Number | JNG15T120HIRU2 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices provide reliable and rugged performance with fast switching capabilities.
| Parameter | Value | Units | Conditions |
| Absolute Maximum Ratings | |||
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | + 20 | V | |
| Continuous Collector Current (IC) | 30 | A | TC=25 |
| Continuous Collector Current (IC) | 15 | A | TC=100 |
| Pulsed Collector Current (ICM) | 45 | A | Note 1 |
| Diode Continuous Forward Current (IF) | 15 | A | TC=100 |
| Diode Maximum Forward Current (IFM) | 45 | A | Note 1 |
| Short Circuit Withstand Time (tsc) | 5 | us | |
| Maximum Power Dissipation (PD) | 175 | W | TC=25 |
| Operating Junction Temperature Range (TJ) | -55 to +175 | ||
| Thermal Characteristics | |||
| Thermal Resistance, Junction to case for IGBT (Rth j-c) | 0.85 | / W | |
| Thermal Resistance, Junction to case for Diode (Rth j-c) | 1.5 | / W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | / W | |
| Electrical Characteristics (IGBT) | |||
| Collector-Emitter Breakdown Voltage (BVCES) | 1200 | V | VGE= 0V, IC= 1mA |
| Collector-Emitter Leakage Current (ICES) | 100 | uA | VCE= 1200V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | + 200 | nA | VGE= + 20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.0 - 7.0 | V | VGE= VCE, IC= 1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.75 | V | VGE=15V, IC= 15A |
| Total Gate Charge (Qg) | 70 | nC | VCC=600V, VGE=15V, IC=15A |
| Turn-on Delay Time (td(on)) | 19 | ns | VCC=600V, VGE=15V, IC=15A, RG=15, Inductive Load, TC=25 |
| Turn-on Rise Time (tr) | 20 | ns | |
| Turn-off Delay Time (td(off)) | 131 | ns | |
| Turn-off Fall Time (tf) | 210 | ns | |
| Turn-on Switching Loss (Eon) | 1.1 | mJ | |
| Turn-off Switching Loss (Eoff) | 0.9 | mJ | |
| Total Switching Loss (Ets) | 2.0 | mJ | |
| Input Capacitance (Cies) | 1320 | pF | VCE=25V, VGE=0V, f = 1MHz |
| Output Capacitance (Coes) | 57 | pF | |
| Reverse Transfer Capacitance (Cres) | 11 | pF | |
| Electrical Characteristics of Diode | |||
| Diode Forward Voltage (VF) | 2.1 - 3.5 | V | IF=15A |
| Diode Reverse Recovery Time (trr) | 130 | ns | VCE = 600V, IF= 15A, diF/dt = 200A/us |
| Diode peak Reverse Recovery Current (Irr) | 4.8 | A | |
| Diode Reverse Recovery Charge (Qrr) | 220 | nC | |
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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