| Description | TO-263 Single IGBTs RoHS |
| Mfr. Part # | AIGB15N65H5 |
| Package | TO-263 |
| Model Number | AIGB15N65H5 |
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Product Specification
| Description | TO-263 Single IGBTs RoHS | Mfr. Part # | AIGB15N65H5 |
| Package | TO-263 | Model Number | AIGB15N65H5 |
The AIGB15N65H5 is a high-speed Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, this dynamically stress-tested and AEC-Q101 qualified component is ideal for demanding power applications.
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| AIGB15N65H5 | 650V | 15A | 1.65V | 175C | AG15EH5 | PG-TO263-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | Tvj 25C | 650 | V |
| DC collector current, limited by Tvjmax | IC | Tc = 25C | 30.0 | A |
| DC collector current, limited by Tvjmax | IC | Tc = 100C | 18.0 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 45.0 | A | |
| Turn off safe operating area | VCE 650V, Tvj 175C, tp = 1s | -45.0 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | tp 10s, D < 0.010 | 30 | V | |
| Power dissipation | Ptot | Tc = 25C | 105.0 | W |
| Power dissipation | Ptot | Tc = 100C | 52.5 | W |
| Operating junction temperature | Tvj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| Soldering temperature, reflow soldering | MSL1 according to JEDEC J-STA-020 | 260 | C | |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | Rth(j-c) | 1.40 | K/W | |
| Thermal resistance, min. footprint junction - ambient | Rth(j-a) | 65 | K/W | |
| Thermal resistance, 6cm Cu on PCB junction - ambient | Rth(j-a) | 40 | K/W | |
| Electrical Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 15.0A, Tvj = 25C | 1.65 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 15.0A, Tvj = 125C | 1.85 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 15.0A, Tvj = 175C | 2.10 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.15mA, VCE = VGE | 4.0 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 1000 | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 175C | 40 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 15.0A | 15.0 | S |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 930 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 24 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 4 | pF |
| Gate charge | QG | VCC = 520V, IC = 15.0A, VGE = 15V | 40.0 | nC |
| Internal emitter inductance | LE | measured 5mm (0.197 in.) from case | 7.0 | nH |
| Switching Characteristics (Inductive Load) | ||||
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 24 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 13 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 151 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 22 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 0.16 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 0.04 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 0.20 | mJ |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 20 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 7 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 156 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 45 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 0.05 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 0.01 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 0.06 | mJ |
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 23 | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 13 | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 171 | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 26 | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 0.23 | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 0.06 | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0 | 0.29 | mJ |
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 17 | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 10 | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 190 | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 49 | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 0.08 | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 0.02 | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0 | 0.10 | mJ |
Applications: Off-board charger, On-board charger, DC/DC converter, Power-Factor correction.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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