Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 762ns |
| Pd - Power Dissipation | 694W |
| Td(on) | 188ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 17pF |
| Input Capacitance(Cies) | 9.86nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Operating Temperature | -55℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 225A |
| Output Capacitance(Coes) | 281pF |
| Reverse Recovery Time(trr) | 580ns |
| Switching Energy(Eoff) | 6.8mJ |
| Turn-On Energy (Eon) | 11.7mJ |
| Description | 694W 1.2kV TO-247-3LPlus Single IGBTs RoHS |
| Mfr. Part # | JNG75T120QCS2 |
| Package | TO-247-3LPlus |
| Model Number | JNG75T120QCS2 |
View Detail Information
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Product Specification
| Td(off) | 762ns | Pd - Power Dissipation | 694W |
| Td(on) | 188ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 17pF | Input Capacitance(Cies) | 9.86nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | Operating Temperature | -55℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 225A | Output Capacitance(Coes) | 281pF |
| Reverse Recovery Time(trr) | 580ns | Switching Energy(Eoff) | 6.8mJ |
| Turn-On Energy (Eon) | 11.7mJ | Description | 694W 1.2kV TO-247-3LPlus Single IGBTs RoHS |
| Mfr. Part # | JNG75T120QCS2 | Package | TO-247-3LPlus |
| Model Number | JNG75T120QCS2 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | VCES | Collector-Emitter Voltage | 1200 | V | ||
| VGES | Gate-Emitter Voltage | + 30 | V | |||
| IC | Continuous Collector Current ( TC=25 ) | 150 | A | |||
| IC | Continuous Collector Current ( TC=100) | 75 | A | |||
| ICM | Pulsed Collector Current (Note 1) | 225 | A | |||
| IF | Diode Continuous Forward Current ( TC=100 ) | 75 | A | |||
| IFM | Diode Maximum Forward Current (Note 1) | 225 | A | |||
| tsc | Short Circuit Withstand Time | 10 | us | |||
| PD | Maximum Power Dissipation ( TC=25 ) | 694 | W | |||
| PD | Maximum Power Dissipation ( TC=100) | 278 | W | |||
| Thermal Characteristics | Rth j-c | Thermal Resistance, Junction to case for IGBT | 0.18 | / W | ||
| Rth j-c | Thermal Resistance, Junction to case for Diode | 0.5 | / W | |||
| Rth j-a | Thermal Resistance, Junction to Ambient | 40 | / W | |||
| TJ | Operating Junction Temperature Range | -55 | +150 | |||
| TSTG | Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TC=25 unless otherwise noted ) | BVCES | Collector-Emitter Breakdown Voltage VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES | Collector-Emitter Leakage Current VCE= 1200V, VGE= 0V | - | 100 | uA | ||
| IGES | Gate Leakage Current, Forward VGE= + 30V, VCE= 0V | - | + 100 | nA | ||
| VGE(th) | Gate Threshold Voltage VGE= VCE, IC= 250uA | 4.0 | - | 7.0 | V | |
| VCE(sat) | Collector-Emitter Saturation Voltage VGE=15V, IC= 75A | 1.65 | 2.3 | V | ||
| Qg | Total Gate Charge VCC=960V VGE=15V IC=75A | 472 | nC | |||
| Qge | Gate-Emitter Charge | 118 | nC | |||
| Qgc | Gate-Collector Charge | 251 | nC | |||
| td(on) | Turn-on Delay Time VCC=600V VGE=15V IC=75A RG=15 Inductive Load TC=25 | 188 | - | ns | ||
| tr | Turn-on Rise Time | 115 | - | ns | ||
| td(off) | Turn-off Delay Time | 762 | - | ns | ||
| tf | Turn-off Fall Time | 137 | - | ns | ||
| Eon | Turn-on Switching Loss | 11.7 | - | mJ | ||
| Eoff | Turn-off Switching Loss | 6.8 | - | mJ | ||
| Ets | Total Switching Loss | 18.5 | - | mJ | ||
| Cies | Input Capacitance VCE=25V VGE=0V f = 1MHz | 9860 | - | pF | ||
| Coes | Output Capacitance | 281 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 17 | - | pF | ||
| Electrical Characteristics of Diode (TC=25 unless otherwise noted ) | VF | Diode Forward Voltage IF=75A | 1.85 | 3.0 | V | |
| trr | Diode Reverse Recovery Time VCE = 600V IF= 75A dIF/dt = 700A/us | 580 | ns | |||
| IRR | Diode peak Reverse Recovery Current | 31.3 | A | |||
| Qr r | Diode Reverse Recovery Charge | 1250 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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