Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 70W |
| Td(off) | 450ns |
| Td(on) | 40ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 28pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@0.3mA |
| Gate Charge(Qg) | 53nC@15V |
| Operating Temperature | -40℃~+150℃ |
| Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 700uJ |
| Turn-On Energy (Eon) | 670uJ |
| Input Capacitance(Cies) | 600pF |
| Pulsed Current- Forward(Ifm) | 24A |
| Output Capacitance(Coes) | 36pF |
| Description | 70W 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IKW08T120 |
| Package | TO-247-3 |
| Model Number | IKW08T120 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 70W | Td(off) | 450ns |
| Td(on) | 40ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 28pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@0.3mA | Gate Charge(Qg) | 53nC@15V |
| Operating Temperature | -40℃~+150℃ | Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 700uJ | Turn-On Energy (Eon) | 670uJ |
| Input Capacitance(Cies) | 600pF | Pulsed Current- Forward(Ifm) | 24A |
| Output Capacitance(Coes) | 36pF | Description | 70W 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IKW08T120 | Package | TO-247-3 |
| Model Number | IKW08T120 |
The IKW08T120 is a Low Loss DuoPack featuring an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery Emitter Controlled HE diode. It offers reduced VCE(sat) and VF compared to BUP305D, a short circuit withstand time of 10s, and is designed for frequency converters and uninterrupted power supply applications. Its TrenchStop and Fieldstop technology ensures tight parameter distribution, high ruggedness, and temperature-stable behavior. The NPT technology allows for easy parallel switching due to a positive temperature coefficient in VCE(sat). It also boasts low EMI, low gate charge, and a very soft, fast recovery anti-parallel Emitter Controlled HE diode. The device is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking Code | Package |
|---|---|---|---|---|---|---|
| IKW08T120 | 1200V | 8A | 1.7V | 150C | K08T120 | PG-TO-247-3 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, IC=0.5mA | 1200 | - | - | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE=15V, IC=8A, Tj=25C | - | 1.7 | - | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE=15V, IC=8A, Tj=125C | - | 2.0 | - | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE=15V, IC=8A, Tj=150C | - | 2.2 | - | V |
| Diode forward voltage | VF | VGE=0V, IF=8A, Tj=25C | - | 1.7 | - | V |
| Diode forward voltage | VF | VGE=0V, IF=8A, Tj=125C | - | 1.7 | - | V |
| Diode forward voltage | VF | VGE=0V, IF=8A, Tj=150C | - | 1.7 | - | V |
| Gate-emitter threshold voltage | VGE(th) | IC=0.3mA,VCE=VGE | 5.0 | 5.8 | 6.5 | V |
| Zero gate voltage collector current | ICEs | VCE=1200V, VGE=0V, Tj=25C | - | 0.2 | - | mA |
| Zero gate voltage collector current | ICEs | VCE=1200V, VGE=0V, Tj=150C | - | 2.0 | - | mA |
| Gate-emitter leakage current | IGEs | VCE=0V,VGE=20V | - | - | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=8A | - | 5 | - | S |
| Input capacitance | Ciss | VCE=25V, VGE=0V, f=1MHz | - | 600 | - | pF |
| Output capacitance | Coss | VCE=25V, VGE=0V, f=1MHz | - | 36 | - | pF |
| Reverse transfer capacitance | Crss | VCE=25V, VGE=0V, f=1MHz | - | 28 | - | pF |
| Gate charge | Qg | VCC=960V, IC=8A, VGE=15V | - | 53 | - | nC |
| Diode reverse recovery time | trr | Tj=25C, VR=600V, IF=8A, diF/dt=600A/s | - | 80 | - | ns |
| Diode reverse recovery charge | Qrr | Tj=25C, VR=600V, IF=8A, diF/dt=600A/s | - | 1.0 | - | C |
| Diode peak reverse recovery current | Irr | Tj=25C, VR=600V, IF=8A, diF/dt=600A/s | - | 13 | - | A |
| Diode reverse recovery time | trr | Tj=150C, VR=600V, IF=8A, diF/dt=600A/s | - | 200 | - | ns |
| Diode reverse recovery charge | Qrr | Tj=150C, VR=600V, IF=8A, diF/dt=600A/s | - | 2.3 | - | C |
| Diode peak reverse recovery current | Irr | Tj=150C, VR=600V, IF=8A, diF/dt=600A/s | - | 20 | - | A |
| Parameter | Symbol | Conditions | Typ. | Unit |
|---|---|---|---|---|
| Turn-on delay time | td(on) | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 40 | ns |
| Rise time | tr | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 23 | ns |
| Turn-off delay time | td(off) | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 450 | ns |
| Fall time | tf | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 70 | ns |
| Turn-on energy | Eon | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 0.67 | mJ |
| Turn-off energy | Eoff | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 0.7 | mJ |
| Total switching energy | Ets | Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 1.37 | mJ |
| Turn-on delay time | td(on) | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 40 | ns |
| Rise time | tr | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 26 | ns |
| Turn-off delay time | td(off) | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 570 | ns |
| Fall time | tf | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 140 | ns |
| Turn-on energy | Eon | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 1.08 | mJ |
| Turn-off energy | Eoff | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 1.2 | mJ |
| Total switching energy | Ets | Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF | 2.28 | mJ |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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