| Pd - Power Dissipation | 441W |
| Td(off) | 262ns |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | RGS80TSX2GC11-HXY |
| Package | TO-247 |
| Model Number | RGS80TSX2GC11-HXY |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 441W | Td(off) | 262ns |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns | Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ | Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | RGS80TSX2GC11-HXY |
| Package | TO-247 | Model Number | RGS80TSX2GC11-HXY |
The RGS80TSX2GC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching efficiency, and increasing avalanche energy. It is designed for applications requiring high reliability and performance, such as motor drives and onboard chargers (OBC).
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VGE(TH) (Typ.) | 5.3 | V | Gate Threshold Voltage |
| VCE(sat).typ (@IC=40A, TJ=25C) | 1.70 | V | Collector-Emitter Saturation Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| Cies (Typ.) | 3980 | pF | Input Capacitance |
| Qg (Typ.) | 346 | nC | Gate charge |
| td(on) (Typ. @TJ=25C) | 25 | ns | Turn-on Delay Time |
| tr (Typ. @TJ=25C) | 28 | ns | Rise Time |
| td(off) (Typ. @TJ=25C) | 262 | ns | Turn-Off Delay Time |
| tf (Typ. @TJ=25C) | 149 | ns | Fall Time |
| Eon (Typ. @TJ=25C) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (Typ. @TJ=25C) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (Typ. @TJ=25C) | 3.60 | mJ | Total Switching Loss |
| Trr (Typ. @TJ=25C) | 94 | ns | Reverse Recovery Time |
| Qrr (Typ. @TJ=25C) | 225 | nC | Reverse Recovery Charge |
| Irrm (Typ. @TJ=25C) | 9.7 | A | Reverse Recovery Current |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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