Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 441W |
| Td(off) | 262ns |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF |
| Input Capacitance(Cies) | 3.98nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Gate Charge(Qg) | 346nC@15V |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 157pF |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Description | 441W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | NGTB40N120FL3WG-HXY |
| Package | TO-247 |
| Model Number | NGTB40N120FL3WG-HXY |
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Product Specification
| Pd - Power Dissipation | 441W | Td(off) | 262ns |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF | Input Capacitance(Cies) | 3.98nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Gate Charge(Qg) | 346nC@15V |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 157pF |
| Reverse Recovery Time(trr) | 94ns | Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ | Description | 441W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | NGTB40N120FL3WG-HXY | Package | TO-247 |
| Model Number | NGTB40N120FL3WG-HXY |
The NGTB40N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is AEC-Q101 Qualified and suitable for demanding applications.
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC @TC=25C | 80 | A | Collector Current |
| IC @TC=100C | 40 | A | Collector Current |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typical) |
| PD @TC=25C | 441 | W | Power Dissipation |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| ICES | 10 | A | Collector-Emitter Leakage Current @ VCE=1200V, VGE=0V |
| Cies | 3980 | pF | Input Capacitance |
| Coes | 157 | pF | Output Capacitance |
| Cres | 93 | pF | Reverse Transfer Capacitance |
| Qg | 346 | nC | Gate Charge |
| td(on) @TJ=25 | 25 | ns | Turn-on Delay Time |
| tr @TJ=25 | 28 | ns | Rise Time |
| td(off) @TJ=25 | 262 | ns | Turn-Off Delay Time |
| tf @TJ=25 | 149 | ns | Fall Time |
| Eon @TJ=25 | 1.30 | mJ | Turn-On Switching Loss |
| Eoff @TJ=25 | 2.30 | mJ | Turn-Off Switching Loss |
| Ets @TJ=25 | 3.60 | mJ | Total Switching Loss |
| Trr @TJ=25 | 94 | ns | Reverse Recovery Time |
| Qrr @TJ=25 | 225 | nC | Reverse Recovery Charge |
| Irrm @TJ=25 | 9.7 | A | Reverse Recovery Current |
| Device Per Unit | Tube | 30 | Quantity |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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