Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 177ns |
| Pd - Power Dissipation | 188W |
| Td(on) | 19ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 7pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@0.3mA |
| Gate Charge(Qg) | 70nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 51ns |
| Switching Energy(Eoff) | 100uJ |
| Turn-On Energy (Eon) | 280uJ |
| Input Capacitance(Cies) | 1.8nF |
| Pulsed Current- Forward(Ifm) | 90A |
| Output Capacitance(Coes) | 45pF |
| Description | 188W 650V TO-220-3 Single IGBTs RoHS |
| Mfr. Part # | IKP30N65H5 |
| Package | TO-220-3 |
| Model Number | IKP30N65H5 |
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Product Specification
| Td(off) | 177ns | Pd - Power Dissipation | 188W |
| Td(on) | 19ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 7pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@0.3mA |
| Gate Charge(Qg) | 70nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 51ns | Switching Energy(Eoff) | 100uJ |
| Turn-On Energy (Eon) | 280uJ | Input Capacitance(Cies) | 1.8nF |
| Pulsed Current- Forward(Ifm) | 90A | Output Capacitance(Coes) | 45pF |
| Description | 188W 650V TO-220-3 Single IGBTs RoHS | Mfr. Part # | IKP30N65H5 |
| Package | TO-220-3 | Model Number | IKP30N65H5 |
The IKP30N65H5 is a high-speed 5th generation IGBT from Infineon, built on TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. It features a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C. The product is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant.
| Type | VCE | IC | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
|---|---|---|---|---|---|---|
| IKP30N65H5 | 650V | 30A | 1.65V | 175C | K30EH5 | PG-TO220-3 |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | Tvj 25C | 650 | V |
| DC collector current, limited by Tvjmax | IC | TC = 25C | 55.0 | A |
| DC collector current, limited by Tvjmax | IC | TC = 100C | 35.0 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | - | 90.0 | A |
| Diode forward current, limited by Tvjmax | IF | TC = 25C | 36.0 | A |
| Diode forward current, limited by Tvjmax | IF | TC = 100C | 21.0 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | - | 90.0 | A |
| Gate-emitter voltage | VGE | - | 20 | V |
| Transient Gate-emitter voltage | - | tp 10s, D < 0.010 | 30 | V |
| Power dissipation | Ptot | TC = 25C | 188.0 | W |
| Power dissipation | Ptot | TC = 100C | 93.0 | W |
| Operating junction temperature | Tvj | - | -40...+175 | C |
| Storage temperature | Tstg | - | -55...+150 | C |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | Rth(j-c) | - | 0.80 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | - | 1.80 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 62 | K/W |
| Electrical Characteristics (at Tvj = 25C, unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 25C | 1.65 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 125C | 1.85 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 175C | 2.10 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15.0A, Tvj = 25C | 1.35 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15.0A, Tvj = 125C | 1.30 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15.0A, Tvj = 175C | 1.80 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.30mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 40.0 | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 175C | 4000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 30.0A | 39.5 | S |
| Dynamic Characteristic | ||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 1800 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 45 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 7 | pF |
| Gate charge | QG | VCC = 520V, IC = 30.0A, VGE = 15V | 70.0 | nC |
| Internal emitter inductance | LE | measured 5mm (0.197 in.) from case | 7.0 | nH |
| Switching Characteristic, Inductive Load (Tvj = 25C) | ||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 19 | ns |
| Rise time | tr | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 9 | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 177 | ns |
| Fall time | tf | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 14 | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.28 | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.10 | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.38 | mJ |
| Turn-on delay time | td(on) | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 18 | ns |
| Rise time | tr | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 4 | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 180 | ns |
| Fall time | tf | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 22 | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.09 | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.03 | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.12 | mJ |
| Diode Characteristic (at Tvj = 25C) | ||||
| Diode reverse recovery time | trr | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 51 | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 0.41 | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 14.3 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | -403 | A/s |
| Diode reverse recovery time | trr | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 28 | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 0.21 | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 12.3 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | -930 | A/s |
| Switching Characteristic, Inductive Load (Tvj = 150C) | ||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 18 | ns |
| Rise time | tr | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 10 | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 208 | ns |
| Fall time | tf | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 16 | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.41 | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.14 | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 15.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.55 | mJ |
| Turn-on delay time | td(on) | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 16 | ns |
| Rise time | tr | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 5 | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 228 | ns |
| Fall time | tf | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 27 | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.15 | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.05 | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 5.0A, VGE = 0.0/15.0V, RG = 23.0 | 0.20 | mJ |
| Diode Characteristic (at Tvj = 150C) | ||||
| Diode reverse recovery time | trr | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 81 | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 0.86 | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | 19.6 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 15.0A, diF/dt = 1600A/s | -310 | A/s |
| Diode reverse recovery time | trr | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 50 | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 0.48 | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | 18.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 5.0A, diF/dt = 1300A/s | -560 | A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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