Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 250ns |
| Pd - Power Dissipation | 20mW |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.13nF |
| Input Capacitance(Cies) | 2.35nF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1.00mA |
| Gate Charge(Qg) | 0.32uC |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Pulsed Current- Forward(Ifm) | 450A |
| Switching Energy(Eoff) | 800uJ |
| Turn-On Energy (Eon) | 260uJ |
| Description | IGBT 1.2kV 20A 20mW Through Hole,62.8x56.7mm |
| Mfr. Part # | DF80R12W2H3FB11 |
| Package | Through Hole,62.8x56.7mm |
| Model Number | DF80R12W2H3FB11 |
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Product Specification
| Td(off) | 250ns | Pd - Power Dissipation | 20mW |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.13nF | Input Capacitance(Cies) | 2.35nF |
| IGBT Type | - | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1.00mA |
| Gate Charge(Qg) | 0.32uC | Operating Temperature | -40℃~+150℃@(Tj) |
| Pulsed Current- Forward(Ifm) | 450A | Switching Energy(Eoff) | 800uJ |
| Turn-On Energy (Eon) | 260uJ | Description | IGBT 1.2kV 20A 20mW Through Hole,62.8x56.7mm |
| Mfr. Part # | DF80R12W2H3FB11 | Package | Through Hole,62.8x56.7mm |
| Model Number | DF80R12W2H3FB11 |
The EasyPACK module features a fast Trench/Fieldstop High-Speed 3 IGBT and a SiC Schottky diode, along with PressFIT technology and an integrated NTC temperature sensor. It is designed for applications such as solar power systems, offering advantages like low switching losses and a compact design. The module boasts a 3 kV AC 1min insulation rating and an Al2O3 substrate with low thermal resistance.
| Component | Parameter | Value | Unit | Conditions |
| Bypass-Diode / Bypass-Diode | Repetitive peak reverse voltage (VRRM) | 1200 | V | Tvj = 25C |
| Maximum RMS forward current per chip (IFRMSM) | 50 | A | TH = 60C | |
| Maximum RMS current at rectifier output (IRMSM) | 60 | A | TH = 60C | |
| Surge forward current (IFSM) | 450 / 360 | A | tp = 10 ms, Tvj = 25C / 150C | |
| It - value (It) | 1000 / 650 | As | tp = 10 ms, Tvj = 25C / 150C | |
| Forward voltage (VF) | 0.95 | V | Tvj = 150C, IF = 30 A | |
| Reverse current (IR) | 0.10 | mA | Tvj = 150C, VR = 1200 V | |
| Thermal resistance, junction to heatsink per diode (RthJH) | 1.60 | K/W | ||
| IGBT-Chopper / IGBT-Chopper | Collector-emitter voltage (VCES) | 1200 | V | Tvj = 25C |
| Implemented collector current (ICN) | 40 | A | ||
| Continuous DC collector current (IC nom) | 20 | A | TH = 100C, Tvj max = 175C | |
| Repetitive peak collector current (ICRM) | 80 | A | tP = 1 ms | |
| Gate-emitter peak voltage (VGES) | +/-20 | V | ||
| Collector-emitter saturation voltage (VCE sat) | 1.55 / 1.70 / 1.75 / 1.70 | V | IC = 20 A, VGE = 15 V, Tvj = 25C / 125C / 150C | |
| Gate threshold voltage (VGEth) | 5.00 / 5.80 / 6.50 | V | IC = 1.00 mA, VCE = VGE, Tvj = 25C | |
| Gate charge (QG) | 0.32 | C | VGE = -15 V ... +15 V | |
| Input capacitance (Cies) | 2.35 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |
| Reverse transfer capacitance (Cres) | 0.13 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |
| Collector-emitter cut-off current (ICES) | 1.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C | |
| Gate-emitter leakage current (IGES) | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C | |
| Turn-on delay time (td on) | 0.025 / 0.025 / 0.028 | s | IC = 20 A, VCE = 600 V, VGE = 15 V, RGon = 12 , Tvj = 25C / 125C / 150C | |
| Rise time (tr) | 0.01 / 0.012 / 0.012 | s | IC = 20 A, VCE = 600 V, VGE = 15 V, RGon = 12 , Tvj = 25C / 125C / 150C | |
| Turn-off delay time (td off) | 0.25 / 0.32 / 0.35 | s | IC = 20 A, VCE = 600 V, VGE = 15 V, RGoff = 12 , Tvj = 25C / 125C / 150C | |
| Fall time (tf) | 0.016 / 0.023 / 0.025 | s | IC = 20 A, VCE = 600 V, VGE = 15 V, RGoff = 12 , Tvj = 25C / 125C / 150C | |
| Thermal resistance, junction to heatsink per IGBT (RthJH) | 1.10 | K/W | ||
| Diode-Chopper / Diode-Chopper | Repetitive peak reverse voltage (VRRM) | 1200 | V | Tvj = 25C |
| Continuous DC forward current (IF) | 15 | A | ||
| Repetitive peak forward current (IFRM) | 30 | A | tP = 1 ms | |
| It - value (It) | 40.0 | As | VR = 0 V, tP = 10 ms, Tvj = 125C | |
| Forward voltage (VF) | 1.45 / 1.75 / 1.85 / 1.75 | V | IF = 15 A, VGE = 0 V, Tvj = 25C / 125C / 150C | |
| Peak reverse recovery current (IRM) | 5.00 | A | IF = 15 A, - diF/dt = 1800 A/s (Tvj=150C), VR = 600 V, Tvj = 25C / 125C / 150C | |
| Recovered charge (Qr) | 0.15 / 0.25 / 0.25 | C | IF = 15 A, - diF/dt = 1800 A/s (Tvj=150C), VR = 600 V, Tvj = 25C / 125C / 150C | |
| Thermal resistance, junction to heatsink per diode (RthJH) | 1.57 | K/W | ||
| Module / Module | Isolation test voltage (VISOL) | 3.0 | kV | RMS, f = 50 Hz, t = 1 min. |
| Creepage distance terminal to heatsink | 11.5 | mm | ||
| Clearance terminal to heatsink | 10.0 | mm | ||
| Comperative tracking index (CTI) | > 200 | min. | ||
| Stray inductance module (LsCE) | 20 | nH | ||
| Storage temperature (Tstg) | -40 to 125 | C | ||
| Weight (G) | 36 | g |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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