Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 120ns |
| Pd - Power Dissipation | 187W |
| Td(on) | 40ns |
| Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 0.05nF |
| Input Capacitance(Cies) | 1.14nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.43mA |
| Gate Charge(Qg) | 0.15uC@15V |
| Pulsed Current- Forward(Ifm) | 120A |
| Switching Energy(Eoff) | 400uJ |
| Turn-On Energy (Eon) | 920uJ |
| Description | 187W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | DGW30N65CTL |
| Package | TO-247 |
| Model Number | DGW30N65CTL |
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Product Specification
| Td(off) | 120ns | Pd - Power Dissipation | 187W |
| Td(on) | 40ns | Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Reverse Transfer Capacitance (Cres) | 0.05nF |
| Input Capacitance(Cies) | 1.14nF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.43mA |
| Gate Charge(Qg) | 0.15uC@15V | Pulsed Current- Forward(Ifm) | 120A |
| Switching Energy(Eoff) | 400uJ | Turn-On Energy (Eon) | 920uJ |
| Description | 187W 650V TO-247 Single IGBTs RoHS | Mfr. Part # | DGW30N65CTL |
| Package | TO-247 | Model Number | DGW30N65CTL |
The DGW30N65CTL S-M451D is a high-performance IGBT with low switching losses, maximum junction temperature of 175, positive temperature coefficient, high ruggedness, and excellent short circuit capability (10s). It is designed for applications such as inverters for motor drives, AC/DC servo drive amplifiers, uninterruptible power supplies, and motion/servo control systems.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V DC | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 60 | A | ||
| Collector Current, limited by Tjmax | IC | TC= 100C | 30 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 60 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 100C | 30 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage (tp10s,D<0.010) | VGE | 30 | V | |||
| Turn off Safe Operating Area | VCE650V, Tj 150C | 120 | A | |||
| Pulsed Collector Current, VGE=15V, tp limited by Tjmax | ICM | 120 | A | |||
| Diode Pulsed Current, tp limited by Tjmax | IFpuls | 120 | A | |||
| Short Circuit Withstand Time, VGE= 15V, VCC=400VVCEM650V | Tsc | 10 | s | |||
| Power Dissipation , Tj=175C,Tc=25C | Ptot | 187 | W | |||
| IGBT Discrete Features | ||||||
| Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ruggedness, temperature stable High short circuit capability(10us) | ||||||
| Circuit Applications | ||||||
| Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Motion/servo control | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 650 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=0.43mA | 4.1 | 5.1 | 6.1 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=30A Tj=25C | 1.85 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=30A Tj=125C | 2.15 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=30A Tj=150C | 2.25 | V | ||
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V Tj= 25C | 1 | mA | ||
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V Tj=150C | 5 | mA | ||
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | 100 | nA | ||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | 1.14 | nF | ||
| Reverse Transfer Capacitance | Cres | 0.05 | nF | |||
| Gate Charge | QG | VCC=300V,IC=30A, VGE=15V | 0.15 | uC | ||
| Short Circuit Collector Current | ISC | VGE=15V, tsc5us, Vcc=300V,Tj150C | 150 | A | ||
| Operating Junction Temperature | Tj | -40 | 175 | C | ||
| Storage Temperature | Ts | -55 | 150 | C | ||
| Soldering Temperature, wave soldering | 1.6mm (0.063in.) from case for 10s | 260 | C | |||
| Diode Electrical Characteristics | ||||||
| Diode Forward Voltage | VF | IF= 30A Tj= 25C | 1.90 | 2.40 | V | |
| Diode Forward Voltage | VF | IF= 30A Tj= 125C | 1.80 | V | ||
| Diode Forward Voltage | VF | IF= 30A Tj= 150C | 1.75 | V | ||
| Switching Characteristic, Inductive Load (IGBT) | ||||||
| Turn-on Delay Time | td(on) | Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 40 | ns | ||
| Rise Time | tr | Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 72 | ns | ||
| Turn-on Energy | Eon | Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 0.92 | mJ | ||
| Turn-off Delay Time | td(off) | Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 120 | ns | ||
| Fall Time | tf | Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 30 | ns | ||
| Turn-off Energy | Eoff | Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 0.40 | mJ | ||
| Turn-on Delay Time | td(on) | Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 45 | ns | ||
| Rise Time | tr | Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 75 | ns | ||
| Turn-on Energy | Eon | Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 1.15 | mJ | ||
| Turn-off Delay Time | td(off) | Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 180 | ns | ||
| Fall Time | tf | Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 35 | ns | ||
| Turn-off Energy | Eoff | Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 0.56 | mJ | ||
| Turn-on Delay Time | td(on) | Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 48 | ns | ||
| Rise Time | tr | Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 78 | ns | ||
| Turn-on Energy | Eon | Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 1.35 | mJ | ||
| Turn-off Delay Time | td(off) | Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 195 | ns | ||
| Fall Time | tf | Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 38 | ns | ||
| Turn-off Energy | Eoff | Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH | 0.68 | mJ | ||
| Diode Electrical Characteristics (Dynamic) | ||||||
| Reverse Recovery Current | Irr | IF=30A,VR=300V di/dt= -300A/s, Tj= 25 | 6.0 | A | ||
| Reverse Recovery Charge | Qrr | IF=30A,VR=300V di/dt= -300A/s, Tj= 25 | 0.10 | uC | ||
| Reverse Recovery Energy | Erec | IF=30A,VR=300V di/dt= -300A/s, Tj= 25 | 0.06 | mJ | ||
| Reverse Recovery Current | Irr | IF=30A,VR=300V di/dt= -300A/s, Tj= 125 | 10 | A | ||
| Reverse Recovery Charge | Qrr | IF=30A,VR=300V di/dt= -300A/s, Tj= 125 | 0.22 | uC | ||
| Reverse Recovery Energy | Erec | IF=30A,VR=300V di/dt= -300A/s, Tj= 125 | 0.09 | mJ | ||
| Reverse Recovery Current | Irr | IF=30A,VR=300V di/dt= -300A/s, Tj= 150 | 12 | A | ||
| Reverse Recovery Charge | Qrr | IF=30A,VR=300V di/dt= -300A/s, Tj= 150 | 0.26 | uC | ||
| Reverse Recovery Energy | Erec | IF=30A,VR=300V di/dt= -300A/s, Tj= 150 | 0.13 | mJ | ||
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 0.80 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 1.40 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 40 | K/W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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