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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China High speed IGBT module YANGJIE MG200HF12LEC2 with soft recovery anti parallel
China High speed IGBT module YANGJIE MG200HF12LEC2 with soft recovery anti parallel

  1. China High speed IGBT module YANGJIE MG200HF12LEC2 with soft recovery anti parallel

High speed IGBT module YANGJIE MG200HF12LEC2 with soft recovery anti parallel

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Description C2 Single IGBTs RoHS
Mfr. Part # MG200HF12LEC2
Package C2
Model Number MG200HF12LEC2

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  1. Product Details
  2. Company Details

Product Specification

Description C2 Single IGBTs RoHS Mfr. Part # MG200HF12LEC2
Package C2 Model Number MG200HF12LEC2

Product Overview

The MG200HF12LEC2 is a high-speed IGBT module designed for demanding applications. It features NPT technology for low switching losses and high short circuit capability. This module includes an ultra-fast, soft-recovery anti-parallel FWD and boasts low inductance. It is suitable for high-frequency drivers, solar inverters, UPS systems, and electric welding machines.

Product Attributes

  • Brand: Yangjie
  • Model: MG200HF12LEC2 S-M291
  • Compliance: RoHS
  • Revision: 1.2
  • Date: 8-Apr-22

Technical Specifications

Parameter Symbol Conditions Value Unit
IGBT Absolute Maximum Ratings
Collector-Emitter Voltage VCES VGE=0V, IC =1mA, Tvj=25 1200 V
Continuous Collector Current IC Tc=80 200 A
Repetitive Peak Collector Current ICRM tp=1ms 400 A
Gate-Emitter Voltage VGES Tvj=25 20 V
Total Power Dissipation Ptot Tc=25 Tvjmax=150 1358 W
IGBT Characteristic Values
Gate-emitter Threshold Voltage VGE(th) VGE=VCE, IC =8mA,Tvj=25 5.0 - 6.5 V
Collector-Emitter Cut-off Current ICES VCE=1200V,VGE=0V,Tvj=25 1.0 mA
Collector-Emitter Saturation Voltage VCE(sat) Ic=200A,VGE=15V, Tvj=25 3.0 - 3.5 V
Collector-Emitter Saturation Voltage VCE(sat) Ic=200A,VGE=15V, Tvj=125 3.8 V
Gate Charge QG 2.0 uC
Input Capacitance Cies VCE=25V,VGE =0V, f=1MHz,Tvj=25 13.2 nF
Reverse Transfer Capacitance Cres 0.8 nF
Gate-Emitter leakage current IGES VCE=0 V, VGE=20V,Tvj = 25 400 nA
Turn-on Delay Time td(on) IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 105 ns
Rise Time tr IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 80 ns
Turn-off Delay Time td(off) IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 285 ns
Fall Time tf IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 24 ns
Energy Dissipation During Turn-on Time Eon IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 21.8 mJ
Energy Dissipation During Turn-off Time Eoff IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 7.0 mJ
Turn-on Delay Time td(on) IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 112 ns
Rise Time tr IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 86 ns
Turn-off Delay Time td(off) IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 330 ns
Fall Time tf IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 29 ns
Energy Dissipation During Turn-on Time Eon IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 31.4 mJ
Energy Dissipation During Turn-off Time Eoff IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 10.2 mJ
SC Data Isc Tp10us,VGE=15V, Tvj=125,Vcc=600V, VCEM1200V 1500 A
Diode Absolute Maximum Ratings
Repetitive Peak Reverse Voltage VRRM Tvj=25 1200 V
Continuous DC Forward Current IF 200 A
Repetitive Peak Forward Current IFRM tp=1ms 400 A
Diode Characteristic Values
Forward Voltage VF IF=200A,Tvj=25 1.90 - 2.3 V
Forward Voltage VF IF=200A,Tvj=125 1.95 V
Recovered Charge Qrr IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 11.5 uC
Peak Reverse Recovery Current Irr IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 105 A
Reverse Recovery Energy Erec IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 6.8 mJ
Recovered Charge Qrr IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 20.8 uC
Peak Reverse Recovery Current Irr IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 124 A
Reverse Recovery Energy Erec IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 13.8 mJ
Module Characteristics
Isolation voltage Visol t=1min,f=50Hz 2500 V
Maximum Junction Temperature Tjmax 150
Operating Junction Temperature Tvj op -40 - 125
Storage Temperature Tstg -40 - 125
Thermal Resistance Junction-to Case (per IGBT) RJC 0.09 K/W
Thermal Resistance Junction-to Case (per Diode) RJC 0.19 K/W
Thermal Resistance Case-to Sink RCS Conductive grease applied 0.046 K/W
Module Electrodes Torque Mt Recommended(M6) 3.0 - 5.0 Nm
Module-to-Sink Torque Ms Recommended(M6) 3.0 - 5.0 Nm
Weight of Module G 315 g

2411220012_YANGJIE-MG200HF12LEC2_C20602000.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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