Hefei Purple Horn E-Commerce Co., Ltd.
| Description | C2 Single IGBTs RoHS |
| Mfr. Part # | MG300HF12TFC2 |
| Package | C2 |
| Model Number | MG300HF12TFC2 |
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Product Specification
| Description | C2 Single IGBTs RoHS | Mfr. Part # | MG300HF12TFC2 |
| Package | C2 | Model Number | MG300HF12TFC2 |
The MG300HF12TFC2 S-M441 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10s), an integrated ultra-fast & soft recovery anti-parallel FWD, and a low inductance package. The module boasts a maximum junction temperature of 175 and is RoHS compliant.
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | Tc=100 | 300 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 600 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V |
| Total Power Dissipation | Ptot | Tc=25, Tvjmax=175 | 1700 | W |
| IGBT Characteristic Values | ||||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=8mA,Tvj=25 | 5.2 - 6.4 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=300A,VGE=15V, Tvj=25 | 2.25 - 2.70 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=300A,VGE=15V, Tvj=125 | 2.55 | V |
| Gate Charge | QG | 2.3 | uC | |
| Input Capacitance | Cies | VCE=25V,VGE =0V, f=1MHz,Tvj=25 | 14.2 | nF |
| Reverse Transfer Capacitance | Cres | 0.8 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0 V, VGE=20V,Tvj = 25 | 400 | nA |
| Turn-on Delay Time | td(on) | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=25 | 143 | ns |
| Rise Time | tr | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=25 | 32 | ns |
| Turn-off Delay Time | td(off) | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=25 | 406 | ns |
| Fall Time | tf | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=25 | 97 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=25 | 13.4 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=25 | 14.7 | mJ |
| Turn-on Delay Time | td(on) | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125 | 167 | ns |
| Rise Time | tr | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125 | 39 | ns |
| Turn-off Delay Time | td(off) | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125 | 463 | ns |
| Fall Time | tf | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125 | 154 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125 | 19.2 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125 | 22.4 | mJ |
| SC Data | Isc | Tp10us, VGE=15V, Tvj=150, Vcc=600V, VCEM1200V | 1400 | A |
| Diode Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 300 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 600 | A |
| Diode Characteristic Values | ||||
| Forward Voltage | VF | IF=300A,Tvj=25 | 2.10 | V |
| Forward Voltage | VF | IF=300A,Tvj=125 | 2.15 | V |
| Recovered Charge | Qrr | IF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=25 | 28 | uC |
| Peak Reverse Recovery Current | Irr | IF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=25 | 355 | A |
| Reverse Recovery Energy | Erec | IF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=25 | 14.5 | mJ |
| Recovered Charge | Qrr | IF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=125 | 47 | uC |
| Peak Reverse Recovery Current | Irr | IF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=125 | 394 | A |
| Reverse Recovery Energy | Erec | IF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=125 | 21.5 | mJ |
| Module Characteristics | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 175 | ||
| Operating Junction Temperature | Tvj op | -40 - 150 | ||
| Storage Temperature | Tstg | -40 - 125 | ||
| Thermal Resistance Junction-to Case (per IGBT) | RJC | 0.09 | K/W | |
| Thermal Resistance Junction-to Case (per Diode) | RJC | 0.14 | K/W | |
| Thermal Resistance Case-to Sink | RCS | Conductive grease applied | 0.035 | K/W |
| Module Electrodes Torque | Mt | Recommended(M6) | 3.0 - 5.0 | Nm |
| Module-to-Sink Torque | Ms | Recommended(M6) | 3.0 - 5.0 | Nm |
| Weight of Module | G | 315 | g | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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