Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 428W |
| Td(off) | 121ns |
| Td(on) | 32ns |
| Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 0.04nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.75mA |
| Pulsed Current- Forward(Ifm) | 300A |
| Reverse Recovery Time(trr) | 160ns |
| Switching Energy(Eoff) | 1.11mJ |
| Turn-On Energy (Eon) | 3.12mJ |
| Description | 428W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | DGW75N65CTS2A |
| Package | TO-247 |
| Model Number | DGW75N65CTS2A |
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Product Specification
| Pd - Power Dissipation | 428W | Td(off) | 121ns |
| Td(on) | 32ns | Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Reverse Transfer Capacitance (Cres) | 0.04nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.75mA | Pulsed Current- Forward(Ifm) | 300A |
| Reverse Recovery Time(trr) | 160ns | Switching Energy(Eoff) | 1.11mJ |
| Turn-On Energy (Eon) | 3.12mJ | Description | 428W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | DGW75N65CTS2A | Package | TO-247 |
| Model Number | DGW75N65CTS2A |
The DGW75N65CTS2A is a high-speed IGBT designed for hard and soft switching applications. It features a maximum junction temperature of 175C, a positive temperature coefficient, and high ruggedness for stable temperature performance. This device is ideal for resonant converters, uninterruptible power supplies, welding converters, and mid to high range switching frequency converters.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 85 | A | ||
| Collector Current, limited by bondwire | IC | TC= 100C | 80 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 85 | A | ||
| Diode Forward Current, limited by bondwire | IF | TC= 100C | 80 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage | VGE | (tp10s,D<0.010) | 30 | V | ||
| Turn off Safe Operating Area | VCE 650V, Tj 150C | 300 | A | |||
| Pulsed Collector Current | ICM | VGE=15V, tp limited by Tjmax | 300 | A | ||
| Diode Pulsed Current | IFpuls | tp limited by Tjmax | 300 | A | ||
| Power Dissipation | Ptot | Tj=175C,Tc=25C | 428 | W | ||
| IGBT Discrete Features | ||||||
| High speed smooth switching device for hard & soft switching | ||||||
| Maximum junction temperature | 175 | |||||
| Positive temperature coefficient | ||||||
| High ruggedness, temperature stable | ||||||
| Circuit Applications | ||||||
| Resonant converters | ||||||
| Uninterruptible power supplies | ||||||
| Welding converters | ||||||
| Mid to high range switching frequency converters | ||||||
| IGBT Electrical Characteristics | (Tj= 25 unless otherwise specified) | |||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 650 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=0.75mA | 3.2 | 4.0 | 4.8 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A Tj=25C | - | 1.10 | 1.45 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A Tj=125C | - | 1.60 | 1.70 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A Tj=150C | - | 1.75 | - | V |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V Tj= 25C | - | 0.25 | - | mA |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V Tj=150C | - | - | 3.00 | mA |
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | - | - | 100 | nA |
| IGBT Dynamic Characteristics | ||||||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | - | 4.75 | - | nF |
| Reverse Transfer Capacitance | Cres | - | 0.04 | - | nF | |
| Gate Charge | QG | VCC=520V,IC=75A, VGE=15V | - | 0.18 | - | uC |
| Diode Electrical Characteristics | ||||||
| Static Diode Forward Voltage | VF | IF= 75A Tj= 25C | - | 1.75 | 2.20 | V |
| Static Diode Forward Voltage | VF | IF= 75A Tj= 125C | - | 1.65 | - | V |
| Static Diode Forward Voltage | VF | IF= 75A Tj= 150C | - | 1.60 | - | V |
| Diode Dynamic Characteristics | (at Tj= 25) | |||||
| Reverse Recovery Current | Irr | IF=75A,VR=400V, -di/dt=440A/s | - | 10 | - | A |
| Reverse Recovery Charge | Qrr | - | 0.98 | - | uC | |
| Diode reverse recovery time | trr | - | 160 | - | ns | |
| Reverse Recovery Energy | Erec | - | 0.14 | - | mJ | |
| Diode Dynamic Characteristics | (at Tj= 125) | |||||
| Reverse Recovery Current | Irr | IF=75A,VR=400V, -di/dt=440A/s | - | 17 | - | A |
| Reverse Recovery Charge | Qrr | - | 2.97 | - | uC | |
| Diode reverse recovery time | trr | - | 188 | - | ns | |
| Reverse Recovery Energy | Erec | - | 0.47 | - | mJ | |
| Diode Dynamic Characteristics | (at Tj= 150) | |||||
| Reverse Recovery Current | Irr | IF=75A,VR=400V, -di/dt=440A/s | - | 20 | - | A |
| Reverse Recovery Charge | Qrr | - | 3.26 | - | uC | |
| Diode reverse recovery time | trr | - | 212 | - | ns | |
| Reverse Recovery Energy | Erec | - | 0.54 | - | mJ | |
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 0.35 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 0.45 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 40 | K/W | |||
| Operating Conditions | ||||||
| Operating Junction Temperature | Tj | -40 | +175 | C | ||
| Storage Temperature | Ts | -55 | +150 | C | ||
| Soldering Temperature, wave soldering | 1.6mm (0.063in.) from case for 10s | 260 | C | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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