Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 375W |
| Td(off) | - |
| Operating Temperature | - |
| Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.9V@15V,40A |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
| Description | 375W 1.35kV SC-65-3 Single IGBTs RoHS |
| Mfr. Part # | GT40WR21,Q |
| Package | SC-65-3 |
| Model Number | GT40WR21,Q |
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Product Specification
| Pd - Power Dissipation | 375W | Td(off) | - |
| Operating Temperature | - | Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV | IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.9V@15V,40A | Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - | Description | 375W 1.35kV SC-65-3 Single IGBTs RoHS |
| Mfr. Part # | GT40WR21,Q | Package | SC-65-3 |
| Model Number | GT40WR21,Q |
The GT40WR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features 6.5th generation technology, a monolithic RC-IGBT with an integrated freewheeling diode, high-speed switching capabilities, low saturation voltage, and a high junction temperature rating. This product is dedicated to specific inverter applications and should not be used for other purposes.
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-emitter voltage | VCES | 1800 | V | (Ta = 25, unless otherwise specified) |
| Gate-emitter voltage | VGES | 25 | V | (Ta = 25, unless otherwise specified) |
| Collector current (DC) | IC | 40 | A | (Tc = 25) |
| Collector current (1 ms) | ICP | 80 | A | (Tc = 25) |
| Diode forward current (DC) | IF | 20 | A | (Tc = 25) |
| Diode forward current (100 s) | IFP | 80 | A | (Tc = 25) |
| Collector power dissipation | PC | 375 | W | (Tc = 25) |
| Junction temperature | Tj | 175 | (max) | |
| Storage temperature | Tstg | -55 to 175 | ||
| Mounting torque | TOR | 0.8 | Nm | (Note 1) |
| Thermal Characteristics | ||||
| Junction-to-case thermal resistance | Rth(j-c) | 0.40 | /W | Max |
| Static Characteristics | ||||
| Gate leakage current | IGES | 100 | nA | VGE = 25 V, VCE = 0 V |
| Collector cut-off current | ICES | 1 | mA | VCE = 1800 V, VGE = 0 V |
| Gate-emitter cut-off voltage | VGE(OFF) | 4.5 to 7.5 | V | IC = 40 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCE(sat) | 2.9 | V | IC = 40 A, VGE = 15 V (typ.) |
| Diode forward voltage | VF | 1.7 to 2.7 | V | IF = 15 A, VGE = 0 V |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | 4500 | pF | VCE = 10 V, VGE = 0 V, f = 1 MHz (typ.) |
| Switching time (rise time) | tr | 0.40 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.) |
| Switching time (turn-on time) | ton | 0.55 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.) |
| Switching time (fall time) | tf | 0.15 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.) |
| Switching time (turn-off time) | toff | 0.42 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.) |
| Reverse recovery time | trr | 1.0 | s | IF = 15 A, VGE = 0 V, di/dt = -20 A/s (typ.) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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