Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 260W |
| Td(off) | 170ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 60ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 3.8nF@30V,0V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 162nC@15V |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 2.2mJ |
| Description | IGBT FS (Field Stop) 650V 100A 260W Through Hole TO-247-3 |
| Mfr. Part # | SPT50N65F1A1 |
| Package | TO-247-3 |
| Model Number | SPT50N65F1A1 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 260W | Td(off) | 170ns |
| Operating Temperature | -40℃~+150℃ | Td(on) | 60ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Input Capacitance(Cies) | 3.8nF@30V,0V |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 162nC@15V | Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 600uJ | Turn-On Energy (Eon) | 2.2mJ |
| Description | IGBT FS (Field Stop) 650V 100A 260W Through Hole TO-247-3 | Mfr. Part # | SPT50N65F1A1 |
| Package | TO-247-3 | Model Number | SPT50N65F1A1 |
The SPT50N65F1A1 is a 650V / 50A Trench Field Stop IGBT designed for high efficiency and ruggedness. It offers low switching losses and is ideal for motion control, solar applications, and welding machines. Key features include high breakdown voltage, Trench-Stop technology for high-speed switching and stable ruggedness, low VCEsat, and easy parallel switching capability.
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | Tj= 25 unless otherwise specified | 650 | V | ||
| DC collector current, limited by Tjmax | IC | TC = 25C | 100 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 50 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 25C | 100 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 100C | 50 | A | ||
| Power dissipation, Tj=25 | Ptot | 260 | W | |||
| Operating junction temperature | Tj | -40 | 150 | C | ||
| Storage temperature | Ts | -55 | 150 | C | ||
| Soldering temperature, wave soldering 1.6mm from case for 10s | 260 | C | ||||
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | |||
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | |||
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |||
| Electrical Characteristics | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250uA | 650 | V | ||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=1mA | 650 | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.0 | 5.0 | 6.0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 25C | 1.65 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 150C | 2.05 | V | ||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | 0.1 | 1000 | A | |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 150C | 40 | A | ||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA | ||
| Transconductance | gfs | VCE = 20V, IC = 50A | 50 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | 3800 | pF | ||
| Output capacitance | Coes | VCE = 30V, VGE = 0V, f = 1MHz | 130 | pF | ||
| Reverse transfer capacitance | Cres | VCE = 30V, VGE = 0V, f = 1MHz | 70 | pF | ||
| Gate charge | QG | VCC = 520V, IC = 50A, VGE = 15V | 162 | nC | ||
| Switching Characteristic, Inductive Load (Tj=25) | ||||||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 60 | ns | ||
| Rise Time | tr | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 55 | ns | ||
| Turn-off Delay Time | td(off) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 170 | ns | ||
| Fall Time | tf | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 80 | ns | ||
| Turn-on Energy | Eon | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 2.2 | mJ | ||
| Turn-off Energy | Eoff | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 0.6 | mJ | ||
| Switching Characteristic, Inductive Load (Tj=150) | ||||||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 60 | ns | ||
| Rise Time | tr | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 60 | ns | ||
| Turn-off Delay Time | td(off) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 172 | ns | ||
| Fall Time | tf | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 90 | ns | ||
| Turn-on Energy | Eon | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 2.35 | mJ | ||
| Turn-off Energy | Eoff | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 0.82 | mJ | ||
| Electrical Characteristics of the DIODE | ||||||
| Diode Forward Voltage | VFM | IF = 50A, Tj= 25 | 2.4 | V | ||
| Reverse Recovery Time | Trr | IF= 40A, VR = 300V, di/dt= 600A/s, Tj= 25 | 90 | ns | ||
| Reverse Recovery Current | Irr | IF= 40A, VR = 300V, di/dt= 600A/s, Tj= 25 | 17 | A | ||
| Reverse Recovery Charge | Qrr | IF= 40A, VR = 300V, di/dt= 600A/s, Tj= 25 | 900 | nC | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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