Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 230ns |
| Pd - Power Dissipation | 417W |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 60ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 100pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Gate Charge(Qg) | 270nC@15V |
| Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 800uJ |
| Turn-On Energy (Eon) | 2.9mJ |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 180pF |
| Description | IGBT FS (Field Stop) 1.2kV 417W Through Hole TO-247-3 |
| Mfr. Part # | SPT40N120F1A |
| Package | TO-247-3 |
| Model Number | SPT40N120F1A |
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Product Specification
| Td(off) | 230ns | Pd - Power Dissipation | 417W |
| Operating Temperature | -40℃~+150℃ | Td(on) | 60ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Reverse Transfer Capacitance (Cres) | 100pF |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Gate Charge(Qg) | 270nC@15V | Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 800uJ | Turn-On Energy (Eon) | 2.9mJ |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 180pF |
| Description | IGBT FS (Field Stop) 1.2kV 417W Through Hole TO-247-3 | Mfr. Part # | SPT40N120F1A |
| Package | TO-247-3 | Model Number | SPT40N120F1A |
The SPT40N120F1A is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| DC collector current, limited by Tjmax | IC | 80 | A | TC = 25C |
| DC collector current, limited by Tjmax | IC | 40 | A | TC = 100C |
| Diode Forward current, limited by Tjmax | IF | 80 | A | TC = 25C |
| Diode Forward current, limited by Tjmax | IF | 40 | A | TC = 100C |
| Pulsed Collector Current, limited by Tjmax | ICpuls | 160 | A | |
| Turn off safe operating area | - | A | VCE 1200V, Tj 150C | |
| Diode Pulsed Current, limited by Tjmax | IFpuls | 160 | A | |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE= 15V, VCE 600V |
| Power dissipation, Tj=25 | Ptot | 417 | W | |
| Operating junction temperature | Tj | -40...+150 | C | |
| Storage temperature | Ts | -55...+150 | C | |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | 260 | C | |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.3 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 0.6 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Electrical Characteristics of the IGBT (Tj= 25 unless otherwise specified) | ||||
| Static Collector-Emitter breakdown voltage | BVCES | 1200 | V | VGE=0V , IC=250A |
| Gate threshold voltage | VGE(th) | 5.1 | V | VGE=VCE, IC=250A |
| Gate threshold voltage | VGE(th) | 5.8 | V | VGE=VCE, IC=250A |
| Gate threshold voltage | VGE(th) | 6.4 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation voltage | VCE(sat) | 2.0 | V | VGE=15V, IC=40A, Tj = 25C |
| Collector-Emitter Saturation voltage | VCE(sat) | 2.5 | V | VGE=15V, IC=40A, Tj = 150C |
| Zero gate voltage collector current | ICES | 10 | A | VCE = 1200V, VGE = 0V, Tj = 25C |
| Zero gate voltage collector current | ICES | 2500 | A | VCE = 1200V, VGE = 0V, Tj = 150C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 15 | S | VCE=20V, IC=15A |
| Dynamic Characteristics of the IGBT | ||||
| Input capacitance | Cies | 4400 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 180 | pF | |
| Reverse transfer capacitance | Cres | 100 | pF | |
| Gate charge | QG | 270 | nC | VCC = 960V, IC = 40A, VGE = 15V |
| Short circuit collector current | ICSC | 240 | A | VGE=15V,tSC10us, VCC=600V, Tjstart=25C |
| Switching Characteristics, Inductive Load (at Tj = 25C) | ||||
| Turn-on delay time | td(on) | 60 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12 |
| Rise time | tr | 27 | ns | |
| Turn-on energy | Eon | 2.9 | mJ | |
| Turn-off delay time | td(off) | 230 | ns | |
| Fall time | tf | 110 | ns | |
| Turn-off energy | Eoff | 0.8 | mJ | |
| Electrical Characteristics of the DIODE (Tj= 25 unless otherwise specified) | ||||
| Diode Forward Voltage | VFM | 3.5 | V | IF = 40A |
| Reverse Recovery Time | Trr | 190 | ns | IF= 40A, VR = 600V, di/dt= 400A/s |
| Reverse Recovery Current | Irr | 6 | A | |
| Reverse Recovery Charge | Qrr | 530 | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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