Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 254W |
| Td(off) | - |
| Operating Temperature | - |
| Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 900V |
| Input Capacitance(Cies) | 3.6nF@10V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 7.5V@60mA |
| Gate Charge(Qg) | - |
| Reverse Recovery Time(trr) | 800ns |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
| Description | 254W 900V TO-3P-3 Single IGBTs RoHS |
| Mfr. Part # | GT60M324(Q) |
| Package | TO-3P-3 |
| Model Number | GT60M324(Q) |
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Product Specification
| Pd - Power Dissipation | 254W | Td(off) | - |
| Operating Temperature | - | Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | Input Capacitance(Cies) | 3.6nF@10V |
| IGBT Type | - | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 7.5V@60mA |
| Gate Charge(Qg) | - | Reverse Recovery Time(trr) | 800ns |
| Switching Energy(Eoff) | - | Turn-On Energy (Eon) | - |
| Description | 254W 900V TO-3P-3 Single IGBTs RoHS | Mfr. Part # | GT60M324(Q) |
| Package | TO-3P-3 | Model Number | GT60M324(Q) |
The TOSHIBA GT60M324 is a Sixth Generation Insulated Gate Bipolar Transistor (IGBT) made of Silicon N Channel. It is designed for consumer applications and voltage resonance inverter switching applications. Key advantages include a built-in Fast Recovery Diode (FRD), high-speed switching capabilities with a typical fall time of 0.11s, low saturation voltage of 1.70V (typ.), and a high junction temperature rating of 175C (max). It is RoHS compatible.
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
| Absolute Maximum Ratings | VCES | 900 | V | ||||
| VGES | ± 25 | V | |||||
| IC (DC) | 60 | A | |||||
| ICP (1ms) | 120 | ||||||
| IF (DC) | 15 | A | |||||
| IFP (1ms) | 120 | ||||||
| PC (Tc = 25°C) | 254 | W | |||||
| Tj | 175 | °C | |||||
| Tstg | -40 to 175 | °C | |||||
| Electrical Characteristics | IGES | nA | VGE = ±25 V, VCE = 0 | ± 500 | |||
| ICES | mA | VCE = 900 V, VGE = 0 | 1.0 | ||||
| VGE (OFF) | 4.5 | V | IC = 60 mA, VCE = 5 V | 4.5 | 7.5 | ||
| VCE (sat) (IC = 10 A, VGE = 15 V) | V | 1.10 | 1.60 | ||||
| VCE (sat) (IC = 30 A, VGE = 15 V) | V | 1.40 | 1.85 | ||||
| VCE (sat) (IC = 60 A, VGE = 15 V) | V | 1.70 | 2.00 | ||||
| Cies (VCE = 10 V, VGE = 0, f = 1 MHz) | 3600 | pF | 3600 | ||||
| Switching Time | tr | Resistive Load VCC = 600 V, IC = 60 A VGG = ±15 V, RG = 51 Ω | 0.19 | ||||
| ton | 0.31 | ||||||
| tf | 0.11 | 0.22 | |||||
| toff | 0.60 | ||||||
| trr (di/dt = -20 A/μs) | 0.8 | μs | IF = 15 A, VGE = 0 | 0.8 | |||
| Thermal Resistance | Rth(j-c) (IGBT) | 0.59 | °C/W | ||||
| Rth(j-c) (Diode) | 4.0 | °C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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