Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 120W |
| Td(off) | 500ns |
| Td(on) | 300ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 2.5nF |
| Description | 120W 600V TO-3PN Single IGBTs RoHS |
| Mfr. Part # | GT30J122A(STA1,E,D |
| Package | TO-3PN |
| Model Number | GT30J122A(STA1,E,D |
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Product Specification
| Pd - Power Dissipation | 120W | Td(off) | 500ns |
| Td(on) | 300ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 2.5nF | Description | 120W 600V TO-3PN Single IGBTs RoHS |
| Mfr. Part # | GT30J122A(STA1,E,D | Package | TO-3PN |
| Model Number | GT30J122A(STA1,E,D |
The GT30J122A is a Silicon N-Channel IGBT from Toshiba, designed for current-resonant inverter switching and partial-switching power factor correction (PFC) applications. It features high-speed switching with a typical fall time of 0.20 s and a low saturation voltage of 1.7 V (typ.) at 50 A collector current. This 4th generation enhancement-mode IGBT is packaged in a TO-3P(N) format.
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings (Ta = 25, unless otherwise specified) | ||||
| Collector-emitter voltage | VCES | 600 | V | |
| Gate-emitter voltage | VGES | 25 | V | |
| Collector current (DC) | IC | 30 | A | |
| Collector current (1 ms) | ICP | 100 | A | |
| Collector power dissipation | PC | 120 | W | (Tc = 25) |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55 to 150 | ||
| Mounting torque | TOR | 0.8 | Nm | |
| Thermal Characteristics | ||||
| Junction-to-case thermal resistance | Rth(j-c) | 1.04 | /W | Max |
| Static Characteristics (Ta = 25, unless otherwise specified) | ||||
| Gate leakage current | IGES | 100 | nA | VGE = 25 V, VCE = 0 V |
| Collector cut-off current | ICES | 1.0 | mA | VCE = 600 V, VGE = 0 V |
| Gate-emitter cut-off voltage | VGE(OFF) | 3.0 | V | IC = 50 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCE(sat) | 1.7 | V | IC = 50 A, VGE = 15 V (typ.) |
| Dynamic Characteristics (Ta = 25, unless otherwise specified) | ||||
| Input capacitance | Cies | 2500 | pF | VCE = 10 V, VGE = 0 V, f = 1 MHz (typ.) |
| Switching time (rise time) | tr | 0.20 | s | Resistive load, VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (turn-on time) | ton | 0.30 | s | Resistive load, VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (fall time) | tf | 0.20 | s | Resistive load, VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (turn-off time) | toff | 0.50 | s | Resistive load, VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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