Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 165ns |
| Pd - Power Dissipation | 260W |
| Td(on) | 56ns |
| Operating Temperature | -40℃~+150℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 3.8nF@30V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 158nC@15V |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 890uJ |
| Turn-On Energy (Eon) | 2.2mJ |
| Description | IGBT FS (Field Stop) 650V 120A 260W Through Hole TO-247-3 |
| Mfr. Part # | SPT60N65F1A1 |
| Package | TO-247-3 |
| Model Number | SPT60N65F1A1 |
View Detail Information
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Product Specification
| Td(off) | 165ns | Pd - Power Dissipation | 260W |
| Td(on) | 56ns | Operating Temperature | -40℃~+150℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Input Capacitance(Cies) | 3.8nF@30V |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 158nC@15V | Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 890uJ | Turn-On Energy (Eon) | 2.2mJ |
| Description | IGBT FS (Field Stop) 650V 120A 260W Through Hole TO-247-3 | Mfr. Part # | SPT60N65F1A1 |
| Package | TO-247-3 | Model Number | SPT60N65F1A1 |
The SPTECH 650V Trench Field Stop IGBTs are designed for high performance in demanding applications. They offer low switching losses, high energy efficiency, and robust avalanche ruggedness, making them ideal for motion control, solar applications, and welding machines. Key features include high breakdown voltage for enhanced reliability, Trench-Stop Technology for high-speed switching and stable ruggedness, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat.
| Parameter | Symbol | Value | Unit | Conditions |
| General | ||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| DC collector current, limited by Tjmax | IC | 120 (TC = 25C) / 60 (TC = 100C) | A | |
| Diode Forward current, limited by Tjmax | IF | 120 (TC = 25C) / 60 (TC = 100C) | A | |
| Continuous Gate-emitter voltage | VGE | ±20 | V | |
| Transient Gate-emitter voltage | VGE | ±30 | V | |
| Pulse collector current, VGE =15V, tp limited by Tjmax | ICM | 180 | A | |
| Power dissipation, Tj=25C | Ptot | 260 | W | |
| Operating junction temperature | Tj | -40...+150 | °C | |
| Storage temperature | Ts | -55...+150 | °C | |
| Soldering temperature, wave soldering 1.6mm from case for 10s | 260 | °C | ||
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | Rθ(j-c) | 0.48 | K/W | |
| Diode thermal resistance, junction - case | Rθ(j-c) | 1.1 | K/W | |
| Thermal resistance, junction - ambient | Rθ(j-a) | 40 | K/W | |
| Electrical Characteristics | ||||
| Static Collector-Emitter Breakdown Voltage | BVCES | 650 | V | VGE=0V , IC=250uA |
| Gate Threshold Voltage | VGE(th) | 4.0 / 5.0 / 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.85 (Tj = 25°C) / 2.25 (Tj = 150°C) | V | VGE=15V, IC=60A |
| Zero gate voltage collector current | ICES | 0.1 (Tj = 25°C) / 1000 (Tj = 150°C) | μA | VCE = 650V, VGE = 0V |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE =±20V |
| Transconductance | gfs | 52 | S | VCE = 20V, IC = 60A |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | 3800 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 130 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Reverse transfer capacitance | Cres | 70 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Gate charge | QG | 158 | nC | VCC = 520V, IC = 60A, VGE = 15V |
| Switching Characteristics (Inductive Load) | ||||
| Turn-on Delay Time | td(on) | 56 | ns | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Rise Time | tr | 79 | ns | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Turn-off Delay Time | td(off) | 165 | ns | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Fall Time | tf | 81 | ns | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Turn-on Energy | Eon | 2.2 | mJ | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Turn-off Energy | Eoff | 0.89 | mJ | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Diode Electrical Characteristics | ||||
| Diode Forward Voltage | VFM | 2.9 | V | IF = 60A, Tj = 25°C |
| Reverse Recovery Time | Trr | 90 | ns | IF= 40A, VR = 300V, di/dt= 600A/μs, Tj = 25°C |
| Reverse Recovery Current | Irr | 17 | A | IF= 40A, VR = 300V, di/dt= 600A/μs, Tj = 25°C |
| Reverse Recovery Charge | Qrr | 900 | nC | IF= 40A, VR = 300V, di/dt= 600A/μs, Tj = 25°C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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