Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 157W |
| Td(off) | 262ns |
| Td(on) | 85ns |
| Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.035nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@500uA |
| Gate Charge(Qg) | 0.08uC@15V |
| Pulsed Current- Forward(Ifm) | 40A |
| Switching Energy(Eoff) | 480uJ |
| Turn-On Energy (Eon) | 980uJ |
| Description | 157W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | DGW10N120CTL |
| Package | TO-247 |
| Model Number | DGW10N120CTL |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 157W | Td(off) | 262ns |
| Td(on) | 85ns | Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Reverse Transfer Capacitance (Cres) | 0.035nF |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@500uA |
| Gate Charge(Qg) | 0.08uC@15V | Pulsed Current- Forward(Ifm) | 40A |
| Switching Energy(Eoff) | 480uJ | Turn-On Energy (Eon) | 980uJ |
| Description | 157W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | DGW10N120CTL |
| Package | TO-247 | Model Number | DGW10N120CTL |
The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability (10us). This product is ideal for inverter applications in motor drives, AC and DC servo drive amplifiers, and uninterruptible power supplies.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V DC | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 20 | A | ||
| Collector Current, limited by Tjmax | IC | TC= 100C | 10 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 20 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 100C | 10 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage | VGE | 30 | V | |||
| Turn off Safe Operating Area | VCE1200V, Tj 150C | 40 | A | |||
| Pulsed Collector Current, VGE=15V, tp limited by Tjmax | ICM | 40 | A | |||
| Diode Pulsed Current, tp limited by Tjmax | IFpuls | 40 | A | |||
| Short Circuit Withstand Time, VGE= 15V, VCC=900VVCEM1200V | Tsc | 10 | s | |||
| Power Dissipation , Tj=175C,Tc=25C | Ptot | 157 | W | |||
| Electrical Characteristics of the IGBTTj= 25unless otherwise specified | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 1200 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=500A | 5.0 | 5.8 | 6.6 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=10A | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=25C | 1.85 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=125C | 2.15 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | Tj=150C | 2.25 | 2.20 | V | |
| Zero Gate Voltage Collector Current | ICES | VCE=1200V, VGE=0V | mA | |||
| Zero Gate Voltage Collector Current | ICES | Tj= 25C | 0.25 | mA | ||
| Zero Gate Voltage Collector Current | ICES | Tj=150C | 5.00 | mA | ||
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | 400 | nA | ||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | 0.75 | nF | ||
| Reverse Transfer Capacitance | Cres | 0.035 | nF | |||
| Gate Charge | QG | VCC=960V,IC=10A, VGE=15V | 0.08 | uC | ||
| Short Circuit Collector Current | ISC | VGE=15V, tsc10us, Vcc=900V,Tj150C | 50 | A | ||
| Operating Junction Temperature | Tj | -40 | +175 | C | ||
| Storage Temperature | Ts | -55 | +150 | C | ||
| Soldering Temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | C | ||||
| Electrical Characteristics of the DiodeTj= 25unless otherwise specified | ||||||
| Static Diode Forward Voltage | VF | IF= 10A | V | |||
| Static Diode Forward Voltage | VF | Tj= 25C | 2.0 | V | ||
| Static Diode Forward Voltage | VF | Tj= 125C | 2.1 | V | ||
| Static Diode Forward Voltage | VF | Tj= 150C | 2.1 | V | ||
| Switching Characteristic, Inductive Load | ||||||
| Dynamic, at Tj= 25 | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | 85 | ns | ||
| Rise Time | tr | 50 | ns | |||
| Turn-on Energy | Eon | 0.98 | mJ | |||
| Turn-off Delay Time | td(off) | 262 | ns | |||
| Fall Time | tf | 140 | ns | |||
| Turn-off Energy | Eoff | 0.48 | mJ | |||
| Dynamic, at Tj= 125 | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | 90 | ns | ||
| Rise Time | tr | 60 | ns | |||
| Turn-on Energy | Eon | 1.33 | mJ | |||
| Turn-off Delay Time | td(off) | 285 | ns | |||
| Fall Time | tf | 150 | ns | |||
| Turn-off Energy | Eoff | 0.9 | mJ | |||
| Dynamic, at Tj= 150 | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=10A, VGE= -15v~15V, Rg=47 | 95 | ns | ||
| Rise Time | tr | 65 | ns | |||
| Turn-on Energy | Eon | 1.68 | mJ | |||
| Turn-off Delay Time | td(off) | 308 | ns | |||
| Fall Time | tf | 160 | ns | |||
| Turn-off Energy | Eoff | 1.05 | mJ | |||
| Electrical Characteristics of the DIODE | ||||||
| Dynamic, at Tj= 25 | ||||||
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | 12.5 | A | ||
| Reverse Recovery Charge | Qrr | 0.9 | uC | |||
| Reverse Recovery Energy | Erec | 0.25 | mJ | |||
| Dynamic, at Tj= 125 | ||||||
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | 14.4 | A | ||
| Reverse Recovery Charge | Qrr | 1.7 | uC | |||
| Reverse Recovery Energy | Erec | 0.5 | mJ | |||
| Dynamic, at Tj= 150 | ||||||
| Reverse Recovery Current | Irr | IF=10A, VR=600V, -di/dt=500A/s | 15.3 | A | ||
| Reverse Recovery Charge | Qrr | 2.0 | uC | |||
| Reverse Recovery Energy | Erec | 0.58 | mJ | |||
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 0.95 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 1.70 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 40 | K/W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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