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Hefei Purple Horn E-Commerce Co., Ltd.

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China Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion
China Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion

  1. China Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion

Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion

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Pd - Power Dissipation 2.307kW
Td(off) 502ns
Td(on) 161ns
Operating Temperature -40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Reverse Transfer Capacitance (Cres) 1.1nF
Input Capacitance(Cies) 25nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.2V@12mA
Gate Charge(Qg) 3.62uC
Pulsed Current- Forward(Ifm) 900A
Switching Energy(Eoff) 28.5mJ
Turn-On Energy (Eon) 23.2mJ
Description 2.307kW 1.2kV C2 Single IGBTs RoHS
Mfr. Part # MG450HF12TLC2
Package C2
Model Number MG450HF12TLC2

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  1. Product Details
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Product Specification

Pd - Power Dissipation 2.307kW Td(off) 502ns
Td(on) 161ns Operating Temperature -40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces) 1.2kV Reverse Transfer Capacitance (Cres) 1.1nF
Input Capacitance(Cies) 25nF Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.2V@12mA
Gate Charge(Qg) 3.62uC Pulsed Current- Forward(Ifm) 900A
Switching Energy(Eoff) 28.5mJ Turn-On Energy (Eon) 23.2mJ
Description 2.307kW 1.2kV C2 Single IGBTs RoHS Mfr. Part # MG450HF12TLC2
Package C2 Model Number MG450HF12TLC2

Product Overview

The MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for Vce(sat), and high short circuit capability (10s). The module includes an ultra-fast and soft recovery anti-parallel FWD, a low inductance package, and a maximum junction temperature of 175.

Product Attributes

  • Brand: S-M449 (implied by product code)
  • Compliance: RoHS
  • Certifications: COMPLIANT RoHS

Technical Specifications

ParameterSymbolConditionsValueUnitMin.Typ.Max.
IGBT Absolute Maximum Ratings
Collector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=251200V
Continuous Collector CurrentICTc=100450A
Repetitive Peak Collector CurrentICRMtp=1ms900A
Gate-Emitter VoltageVGESTvj=2520V
Total Power DissipationPtotTc=25 Tvjmax=1752307W
IGBT Characteristic Values
Gate-emitter Threshold VoltageVGE(th)VGE=VCE, IC=12mA,Tvj=25V5.25.86.4
Collector-Emitter Cut-off CurrentICESVCE=1200V,VGE=0V,Tvj=25mA1.0
Collector-Emitter Saturation VoltageVCE(sat)Ic=450A,VGE=15V, Tvj=25V1.902.25
Ic=450A,VGE=15V, Tvj=125V2.15
Ic=450A,VGE=15V, Tvj=150V2.20
Gate ChargeQG3.62uC
Internal Gate ResistanceRGint1.67
Input CapacitanceCiesVCE=25V,VGE =0V, f=1MHz,Tvj=2525nF
Reverse Transfer CapacitanceCresVCE=25V,VGE =0V, f=1MHz,Tvj=251.1nF
Gate-Emitter leakage currentIGESVCE=0 V, VGE=20V,Tvj = 25nA400
Turn-on Delay Timetd(on)IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25161ns
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125192ns
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150197ns
Rise TimetrIC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=2552ns
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=12563ns
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=15068ns
Turn-off Delay Timetd(off)IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=25502ns
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125536ns
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150543ns
Fall TimetfIC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=2596ns
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=125135ns
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=150137ns
Energy Dissipation During Turn-on TimeEonIC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=2523.2mJ
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=12531.5mJ
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=15034.6mJ
Energy Dissipation During Turn-off TimeEoffIC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=2528.5mJ
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=12544.3mJ
IC=450 A VCE=600 V VGE= 15V RG=1.8 Tvj=15048.1mJ
SC DataIscTp10us, VGE=15V, Tvj=150, Vcc=900V, VCEM1200V2250A
Diode Absolute Maximum Ratings
Repetitive Peak Reverse VoltageVRRMTvj=251200V
Continuous DC Forward CurrentIF450A
Repetitive Peak Forward CurrentIFRMtp=1ms900A
I2t-valueI2tVR=0,tp=10ms,Tj=12532000A2s
VR=0,tp=10ms,Tj=15030000A2s
Diode Characteristic Values
Forward VoltageVFIF=450A,Tvj=25V2.10
IF=450A,Tvj=125V2.15
IF=450A,Tvj=150V2.17
Recovered ChargeQrrIF=450 A VR=600V -diF/dt=6500A/us Tvj=2545uC
IF=450 A VR=600V -diF/dt=6500A/us Tvj=12586uC
IF=450 A VR=600V -diF/dt=6500A/us Tvj=15091uC
Peak Reverse Recovery CurrentIrrIF=450 A VR=600V -diF/dt=6500A/us Tvj=25383A
IF=450 A VR=600V -diF/dt=6500A/us Tvj=125453A
IF=450 A VR=600V -diF/dt=6500A/us Tvj=150461A
Reverse Recovery EnergyErecIF=450 A VR=600V -diF/dt=6500A/us Tvj=2521.2mJ
IF=450 A VR=600V -diF/dt=6500A/us Tvj=12537.2mJ
IF=450 A VR=600V -diF/dt=6500A/us Tvj=15041.5mJ
Module Characteristics
Isolation voltageVisolt=1min,f=50Hz2500V
Maximum Junction TemperatureTjmax175
Operating Junction TemperatureTvj op-40150
Storage TemperatureTstg-40125
Thermal Resistance Junction-to CaseRJCper IGBT0.065K/W
Thermal Resistance Junction-to CaseRJCper Diode0.13K/W
Comparative Tracking IndexCTI>400
Thermal Resistance Case-to SinkRCSConductive grease applied0.033K/W
Module Electrodes TorqueMtRecommended(M6)Nm3.05.0
Module-to-Sink TorqueMsRecommended(M6)Nm3.05.0
Weight of ModuleG315g

2411220012_YANGJIE-MG450HF12TLC2_C20602007.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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