Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 880W |
| Td(off) | 420ns |
| Td(on) | 150ns |
| Operating Temperature | -40℃~+150℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.48nF |
| Input Capacitance(Cies) | 8.8nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@6mA |
| Gate Charge(Qg) | 700nC@15V |
| Reverse Recovery Time(trr) | 350ns |
| Switching Energy(Eoff) | 9mJ |
| Turn-On Energy (Eon) | 22mJ |
| Description | 880W 1.2kV Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | MG150HF12MRC2 |
| Package | Screw Terminals |
| Model Number | MG150HF12MRC2 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 880W | Td(off) | 420ns |
| Td(on) | 150ns | Operating Temperature | -40℃~+150℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Reverse Transfer Capacitance (Cres) | 0.48nF |
| Input Capacitance(Cies) | 8.8nF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@6mA |
| Gate Charge(Qg) | 700nC@15V | Reverse Recovery Time(trr) | 350ns |
| Switching Energy(Eoff) | 9mJ | Turn-On Energy (Eon) | 22mJ |
| Description | 880W 1.2kV Screw Terminals Single IGBTs RoHS | Mfr. Part # | MG150HF12MRC2 |
| Package | Screw Terminals | Model Number | MG150HF12MRC2 |
The MG150HF12MRC2 S-M242 is a high-performance IGBT module designed for industrial applications. It features short circuit rating, low stray inductance, low saturation voltage, and ultra-low loss, making it ideal for demanding power electronics systems. This module is RoHS compliant and lead-free.
| Symbol | Description | Conditions | Values | Units | ||
| Absolute Maximum Ratings | ||||||
| VCES | Collector - Emitter Voltage | 1200 | V | |||
| VGES | Gate-Emitter Voltage | ±20 | V | |||
| IC | DC Collector Current | TC=25°C | 210 | A | ||
| TC=80°C | 150 | A | ||||
| ICpuls | Pulsed Collector Current | TC=25°C, tp=1ms | 420 | A | ||
| TC=80°C, tp=1ms | 300 | A | ||||
| Ptot | Power Dissipation Per IGBT | 880 | W | |||
| TJ | Junction Temperature Range | -40 to +150 | °C | |||
| TSTG | Storage Temperature Range | -40 to +125 | °C | |||
| Viso | Insulation Test Voltage | AC, t=1min | 3000 | V | ||
| Mounting Torque | Power Terminals | Screw: M6 | 5±15% | N*m | ||
| Mounting Screw:M6 | 5±15% | N*m | ||||
| Electrical Characteristics of IGBT | ||||||
| V(BR)CES | Collector-Emitter Breakdown Voltage | VGE = 0V, IC = 1mA | 1200 | V | ||
| ICES | Collector Leakage Current | VCE=1200V,VGE=0V,TJ=25°C | 0.5 | mA | ||
| VCE=1200V, VGE=0V, TJ=125°C | 2 | mA | ||||
| IGES | Gate Leakage Current | VCE=0V, VGE=±20V | -200 to 200 | nA | ||
| VGE(th) | Gate - Emitter Threshold Voltage | VCE=VGE, IC=6mA | 5.0 | 6.1 | 7 | V |
| VCE(sat) | Collector Emitter Saturation Voltage | IC=150A, VGE=15V, TJ=25°C | 2.0 | 2.3 | V | |
| IC=150A VGE=15V, TJ=125°C | 2.3 | 2.6 | V | |||
| Cies | Input Capacitance | VCE=25V, VGE=0V, f =1MHz | 8.8 | nF | ||
| Cres | Reverse Transfer Capacitance | 0.48 | nF | |||
| Switching Characteristics (IGBT) | ||||||
| td(on) | Turn-on Delay Time | VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load | 150 | ns | ||
| VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load | 170 | ns | ||||
| tr | Rise Time | VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load | 70 | ns | ||
| VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load | 80 | ns | ||||
| td(off) | Turn-off Delay Time | VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load | 420 | ns | ||
| VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load | 470 | ns | ||||
| Tf | Fall Time | VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load | 50 | ns | ||
| VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load | 60 | ns | ||||
| Eon | Turn-on Switching Loss | VCC=600V, RG =15Ω IC=150A TJ=25°C | 22 | mJ | ||
| TJ=125°C | 24 | mJ | ||||
| Eoff | Turn-off Switching Loss | VCC=600V, RG =15Ω IC=150A TJ=25°C | 9 | mJ | ||
| TJ=125°C | 9.6 | mJ | ||||
| Qge | Gate Charge | VCC=600V,IC=150A,VGE=±15V | 700 | nC | ||
| Electrical Characteristics of FWD | ||||||
| VFM | Forward Voltage | IF150A, VGE = 0V TJ = 25 | 2.0 | 2.48 | V | |
| TJ = 125 | 1.7 | 2.20 | V | |||
| trr | Reverse Recovery Time | IF=150A , VR=600V, diF/dt=-3000A/μs, TVj =125°C, | 350 | ns | ||
| IRRM | Max. Reverse Recovery Current | 160 | A | |||
| Erec | Reverse Recovery Energy | 11.5 | mJ | |||
| Thermal Resistance Characteristics | ||||||
| RθJC | Junction-To-Case (IGBT Part, Per Leg) | 0.17 | °C/W | |||
| RθJC | Junction-To-Case (Diode Part, Per Leg) | 0.3 | °C/W | |||
| Application Scenarios | ||||||
| Circuit Applications | Industrial Inverters, Servo Applications, SMPS UPS, Induction Heating | |||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!