Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 227W |
| Td(off) | 151ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 31ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.25nF@25V,0V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.2mA |
| Gate Charge(Qg) | 0.35uC |
| Switching Energy(Eoff) | 2.64mJ |
| Turn-On Energy (Eon) | 3.97mJ |
| Description | IGBT 1.2kV 40A 227W Through Hole E1 |
| Mfr. Part # | MG40P12E1 |
| Package | E1 |
| Model Number | MG40P12E1 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 227W | Td(off) | 151ns |
| Operating Temperature | -40℃~+150℃ | Td(on) | 31ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Input Capacitance(Cies) | 2.25nF@25V,0V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.2mA | Gate Charge(Qg) | 0.35uC |
| Switching Energy(Eoff) | 2.64mJ | Turn-On Energy (Eon) | 3.97mJ |
| Description | IGBT 1.2kV 40A 227W Through Hole E1 | Mfr. Part # | MG40P12E1 |
| Package | E1 | Model Number | MG40P12E1 |
The MG40P12E1 S-M336 is a high-performance IGBT module designed for applications requiring robust power handling and efficient switching. It features low switching losses, low VCE(sat) with a positive temperature coefficient, and includes a fast/soft recovery anti-parallel FWD. The module boasts a low inductance case, high short circuit capability (10s), and a maximum junction temperature of 175. It is suitable for motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS).
| Parameter | Symbol | Conditions | Value | Unit | Min. | Typ. | Max. |
| IGBT-inverter | |||||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V | |||
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 40 | A | |||
| Repetitive Peak Collector Current | ICRM | tp=1ms | 80 | A | |||
| Gate-Emitter Voltage | VGES | Tvj=25 | V | -20 | 20 | ||
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 227 | W | |||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =1.2mA,Tvj=25 | V | 5.2 | 5.9 | 6.5 | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | mA | 1.0 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=40A,VGE=15V, Tvj=25 | V | 2.05 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=40A,VGE=15V, Tvj=125 | V | 2.20 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=40A,VGE=15V, Tvj=150 | V | 2.40 | |||
| Gate Charge | QG | 0.35 | uC | ||||
| Input Capacitance | Cies | VCE=25V, VGE =0V, f=1MHz, Tvj=25 | 2.25 | nF | |||
| Reverse Transfer Capacitance | Cres | 0.10 | nF | ||||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj = 25 | 400 | nA | |||
| Turn-on Delay Time | td(on) | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 31 | ns | |||
| Rise Time | tr | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 44 | ns | |||
| Turn-off Delay Time | td(off) | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 151 | ns | |||
| Fall Time | tf | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 245 | ns | |||
| Energy Dissipation During Turn-on Time | Eon | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 3.97 | mJ | |||
| Energy Dissipation During Turn-off Time | Eoff | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 2.64 | mJ | |||
| Turn-on Delay Time | td(on) | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 34 | ns | |||
| Rise Time | tr | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 50 | ns | |||
| Turn-off Delay Time | td(off) | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 163 | ns | |||
| Fall Time | tf | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 319 | ns | |||
| Energy Dissipation During Turn-on Time | Eon | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 5.01 | mJ | |||
| Energy Dissipation During Turn-off Time | Eoff | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 2.95 | mJ | |||
| SC Data | Isc | tp10us,VGE=15V,Tvj=150, VCC=900V,VCEM1200V | 200 | A | |||
| Diode-inverter | |||||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V | |||
| Continuous DC Forward Current | IF | 40 | A | ||||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 80 | A | |||
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 240 | A2s | |||
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=150 | 220 | A2s | |||
| Forward Voltage | VF | IF=40A,Tvj=25 | V | 2.00 | |||
| Forward Voltage | VF | IF=40A,Tvj=125 | V | 1.80 | |||
| Forward Voltage | VF | IF=40A,Tvj=150 | V | 1.72 | |||
| Recovered Charge | Qrr | IF=40A, VR=600V, -diF/dt =1000A/us, Tvj=25 | 2.35 | uC | |||
| Peak Reverse Recovery Current | Irr | IF=40A, VR=600V, -diF/dt =1000A/us, Tvj=25 | 21 | A | |||
| Reverse Recovery Energy | Erec | IF=40A, VR=600V, -diF/dt =1000A/us, Tvj=25 | 0.67 | mJ | |||
| Recovered Charge | Qrr | IF=40A, VR=600V, -diF/dt =1000A/us, Tvj=150 | 4.26 | uC | |||
| Peak Reverse Recovery Current | Irr | IF=40A, VR=600V, -diF/dt =1000A/us, Tvj=150 | 23 | A | |||
| Reverse Recovery Energy | Erec | IF=40A, VR=600V, -diF/dt =1000A/us, Tvj=150 | 1.16 | mJ | |||
| IGBT-brake-chopper | |||||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V | |||
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 40 | A | |||
| Repetitive Peak Collector Current | ICRM | tp=1ms | 80 | A | |||
| Gate-Emitter Voltage | VGES | Tvj=25 | V | -20 | 20 | ||
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 227 | W | |||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =1.2mA,Tvj=25 | V | 5.2 | 5.9 | 6.5 | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | mA | 1.0 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=40A,VGE=15V, Tvj=25 | V | 2.05 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=40A,VGE=15V, Tvj=125 | V | 2.20 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=40A,VGE=15V, Tvj=150 | V | 2.40 | |||
| Gate Charge | QG | 0.35 | uC | ||||
| Input Capacitance | Cies | VCE=25V, VGE =0V, f=1MHz, Tvj=25 | 2.25 | nF | |||
| Reverse Transfer Capacitance | Cres | 0.10 | nF | ||||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj = 25 | 400 | nA | |||
| Turn-on Delay Time | td(on) | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 31 | ns | |||
| Rise Time | tr | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 44 | ns | |||
| Turn-off Delay Time | td(off) | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 151 | ns | |||
| Fall Time | tf | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 245 | ns | |||
| Energy Dissipation During Turn-on Time | Eon | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 3.97 | mJ | |||
| Energy Dissipation During Turn-off Time | Eoff | IC=40A, VCE=600V, VGE = 15V, RG=27, Tvj=25 | 2.64 | mJ | |||
| Turn-on Delay Time | td(on) | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 34 | ns | |||
| Rise Time | tr | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 50 | ns | |||
| Turn-off Delay Time | td(off) | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 163 | ns | |||
| Fall Time | tf | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 319 | ns | |||
| Energy Dissipation During Turn-on Time | Eon | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 5.01 | mJ | |||
| Energy Dissipation During Turn-off Time | Eoff | IC=40A, VCE=600V, VGE= 15V, RG=27, Tvj=150 | 2.95 | mJ | |||
| SC Data | Isc | tp10us,VGE=15V,Tvj=150, VCC=900V,VCEM1200V | 200 | A | |||
| Diode-Brake-Chopper | |||||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V | |||
| Continuous DC Forward Current | IF | 15 | A | ||||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 30 | A | |||
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 48.0 | A2s | |||
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=150 | 42.0 | A2s | |||
| Forward Voltage | VF | IF=15A,Tvj=25 | V | 2.00 | |||
| Forward Voltage | VF | IF=15A,Tvj=125 | V | 1.80 | |||
| Forward Voltage | VF | IF=15A,Tvj=150 | V | 1.70 | |||
| Recovered Charge | Qrr | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=25 | 1.20 | uC | |||
| Peak Reverse Recovery Current | Irr | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=25 | 10 | A | |||
| Reverse Recovery Energy | Erec | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=25 | 0.35 | mJ | |||
| Recovered Charge | Qrr | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=150 | 1.60 | uC | |||
| Peak Reverse Recovery Current | Irr | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=150 | 15 | A | |||
| Reverse Recovery Energy | Erec | IF=15A, VR=600V, -diF/dt =550A/us, Tvj=150 | 1.20 | mJ | |||
| Diode-Rectifier | |||||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1600 | V | |||
| Average output Current | IF(AV) | 50/60Hz, sine wave, TC=100 | 50 | A | |||
| Maximum RMS Current at Rectifier Output | IRMSM | TC=100 | 60 | A | |||
| Surge Forward Current | IFSM | VR=0V,tp=10ms,Tvj=45 | 320 | A | |||
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=45 | 510 | A2s | |||
| Diode Forward Voltage | VF | IF=40A,Tvj=125 | V | 1.12 | |||
| Reverse Current | IR | Tvj=125,VR=1600V | mA | 2.0 | |||
| NTC-Thermistor | |||||||
| Rated Resistance | R25 | 5.0 | k | ||||
| Deviation of R100 | R/R | TC=100,R100=493.3 | % | -5 | 5 | ||
| Power Dissipation | P25 | 20.0 | mW | ||||
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298.15 K))] | 3375 | K | |||
| Module Characteristics | |||||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | |||
| Maximum Junction Temperature | Tjmax | 175 | |||||
| Operating Junction Temperature | Tvj op | -40 | 150 | ||||
| Storage Temperature | Tstg | -40 | 125 | ||||
| Stray-inductance-module | LSCE | 60 | nH | ||||
| Module lead resistance, terminals-chip | Rcc+EE | TC=25, per switch | 4.0 | m | |||
| Module lead resistance, terminals-chip | RAA+CC | 3.0 | m | ||||
| Thermal Resistance Junction-to Case | RJC | per IGBT-inverter | 0.66 | K/W | |||
| Thermal Resistance Junction-to Case | RJC | per Diode-inverter | 1.00 | K/W | |||
| Thermal Resistance Junction-to Case | RJC | per IGBT-brake-chopper | 0.66 | K/W | |||
| Thermal Resistance Junction-to Case | RJC | per Diode-chopper | 1.50 | K/W | |||
| Thermal Resistance Junction-to Case | RJC | per Diode-rectifier | 0.75 | K/W | |||
| Thermal Resistance Case-to Sink | RCS | per IGBT-inverter | 0.31 | K/W | |||
| Thermal Resistance Case-to Sink | RCS | per Diode-inverter | 0.48 | K/W | |||
| Thermal Resistance Case-to Sink | RCS | per IGBT-brake-chopper | 0.31 | K/W | |||
| Thermal Resistance Case-to Sink | RCS | per Diode-chopper | 0.70 | K/W | |||
| Thermal Resistance Case-to Sink | RCS | per Diode-rectifier | 0.36 | K/W | |||
| Thermal Resistance Case-to Sink | RCS | per Module | 0.02 | K/W | |||
| Module-to-Sink Torque | Ms | Nm | 3.0 | 6.0 | |||
| Weight of Module | G | 180 | g | ||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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