| Description | TO-252 Single IGBTs RoHS |
| Mfr. Part # | VBE16I07 |
| Package | TO-252 |
| Model Number | VBE16I07 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Description | TO-252 Single IGBTs RoHS | Mfr. Part # | VBE16I07 |
| Package | TO-252 | Model Number | VBE16I07 |
The VBE16I07 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications (server and telecom power supplies), lighting (HID, fluorescent ballast), consumer and computing (ATX power supplies), industrial (welding, battery chargers), renewable energy (solar PV inverters), and switch mode power supplies (SMPS).
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | VGE = 0 V, IC = 250 A | 600 | - | - | V |
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = VGE, ID = 250 A | 4 | 5 | 6 | V |
| Zero Gate Voltage Collector Current | ICES | VCE = 600 V, VGE = 0 V, TJ = 25 C | - | 1 | 20 | A |
| Zero Gate Voltage Collector Current | ICES | VCE = 600 V, VGE = 0 V, TJ = 150 C | - | - | 1000 | A |
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGS = 20 V | - | - | 100 | nA |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 7 A | - | 1.6 | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 7 A | - | 1.75 | - | V |
| Forward Transconductance | gfs | VCE = 20 V, IC = 7 A | - | 40 | - | S |
| Input Capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 1400 | - | pF |
| Output Capacitance | Coes | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 76 | - | pF |
| Reverse Transfer Capacitance | Cres | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 21 | - | pF |
| Total Gate Charge | Qg | IC = 7 A, VCE = 400 V, VGE = 15 V | - | 18 | - | nC |
| Gate-Emitter Charge | Qge | IC = 7 A, VCE = 400 V, VGE = 15 V | - | 15 | - | nC |
| Gate to Collector Charge | Qgc | IC = 7 A, VCE = 400 V, VGE = 15 V | - | 33 | - | nC |
| Turn-On Delay Time | td(on) | VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 | - | 45 | - | ns |
| Rise Time | tr | VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 | - | 25 | - | ns |
| Turn-Off Delay Time | td(off) | VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 | - | 115 | - | ns |
| Fall Time | tf | VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 | - | 24 | - | ns |
| Internal emitter inductance | LE | - | - | 13 | - | nH |
| Diode Forward Current | IF | - | - | - | 7 | A |
| Pulsed Diode Forward Current | IFM | - | - | - | 21 | A |
| Diode Forward Voltage | VF | IF = 7 A | - | 1.75 | 2.1 | V |
| Reverse Recovery Time | trr | TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V | - | 70 | - | ns |
| Reverse Recovery Charge | Qrr | TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V | - | 0.26 | - | C |
| Reverse Recovery Current | IRRM | TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V | - | 9 | - | A |
| Collector-Emitter Voltage | VCE | TC=25 | - | - | 600 | V |
| Continuous Collector Current | IC | TC=25 | - | - | 14 | A |
| Continuous Collector Current | IC | TC=100 | - | - | 7 | A |
| Pulsed Collector Current | ICM | - | - | - | 21 | A |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1.6 | - | V |
| Maximum Power Dissipation | PD | TC = 25 C | - | - | 55 | W |
| Maximum Power Dissipation | PD | TC = 100 C | - | - | 43 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - | -55 | - | +175 | C |
| Short Circuit Withstand Time | tSC | VGE= 15V, VCE 400V, TC=150 | - | - | 3 | s |
| Short Circuit Withstand Time | tSC | VGE= 15V, VCE 400V, TC=100 | - | - | 5 | s |
| Soldering Recommendations (Peak Temperature) | - | for 10 s | - | - | 260 | C |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | - | - | 40 | - | C/W |
| Maximum Junction-to-Case Thermal Resistance | RthJC | - | - | 1.6 | - | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!