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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Power semiconductor YANGJIE MG75HF12MRC1 IGBT module suitable for induction
China Power semiconductor YANGJIE MG75HF12MRC1 IGBT module suitable for induction

  1. China Power semiconductor YANGJIE MG75HF12MRC1 IGBT module suitable for induction

Power semiconductor YANGJIE MG75HF12MRC1 IGBT module suitable for induction

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Td(off) 248ns
Pd - Power Dissipation 625W
Operating Temperature -40℃~+150℃
Td(on) 80ns
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Input Capacitance(Cies) 5.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5V@3mA
Gate Charge(Qg) 780nC@15V
Pulsed Current- Forward(Ifm) 150A
Output Capacitance(Coes) 0.4nF
Reverse Recovery Time(trr) 160ns
Switching Energy(Eoff) 4.9mJ
Turn-On Energy (Eon) 7.45mJ
Description 625W 1.2kV Screw Terminals Single IGBTs RoHS
Mfr. Part # MG75HF12MRC1
Package Screw Terminals
Model Number MG75HF12MRC1

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  1. Product Details
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Product Specification

Td(off) 248ns Pd - Power Dissipation 625W
Operating Temperature -40℃~+150℃ Td(on) 80ns
Collector-Emitter Breakdown Voltage (Vces) 1.2kV Input Capacitance(Cies) 5.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5V@3mA Gate Charge(Qg) 780nC@15V
Pulsed Current- Forward(Ifm) 150A Output Capacitance(Coes) 0.4nF
Reverse Recovery Time(trr) 160ns Switching Energy(Eoff) 4.9mJ
Turn-On Energy (Eon) 7.45mJ Description 625W 1.2kV Screw Terminals Single IGBTs RoHS
Mfr. Part # MG75HF12MRC1 Package Screw Terminals
Model Number MG75HF12MRC1

Product Overview

The MG75HF12MRC1 is an IGBT module designed for high-reliability power applications. It features short circuit rating, low stray inductance, low saturation voltage, and ultra-low loss, making it suitable for industrial inverters, servo applications, SMPS, UPS, induction heating, and welders. This lead-free product is compliant with RoHS requirements.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Certifications: RoHS Compliant

Technical Specifications

SymbolDescriptionValuesUnitsMin.Typ.Max.
Absolute Maximum Ratings
VCESCollector - Emitter Voltage1200V
VGESGate-Emitter Voltage±20V
ICDC Collector Current25°C105A
80°C75A
ICM(1)Peak Collector Current150A
IFDiode Continuous Forward Current75A
IFMPeak FWD Current Repetitive150A
tSCShort Circuit Withstand Time>10μs
PDMaximum Power Dissipation (IGBT)625W
TJMaximum Junction Temperature150°C
TJOPOperating Temperature-40 ~ +150°C
TstgStorage Temperature-40 ~ +125°C
VisoIsolation Voltage3000V
Electrical Characteristics of IGBT
V(BR)CESCollector-Emitter Breakdown Voltage1200V
ICESCollector Leakage Current100μA
1mA
IGESGate Leakage Current±400nA
VGE(th)Gate - Emitter Threshold Voltage56.27V
VCE(sat)Collector Emitter Saturation Voltage1.8V
2V
CiesInput Capacitance5.5nF
CoesOutput Capacitance0.4nF
Switching Characteristics (TJ = 25)
td(on)Turn-on Delay Time80ns
trRise Time70ns
td(off)Turn-off Delay Time248ns
TfFall Time290ns
EonTurn-on Switching Loss7.45mJ
EoffTurn-off Switching Loss4.9mJ
Switching Characteristics (TJ = 125)
td(on)Turn-on Delay Time95ns
trRise Time85ns
td(off)Turn-off Delay Time262ns
TfFall Time320ns
EonTurn-on Switching Loss10.3mJ
EoffTurn-off Switching Loss7.8mJ
QgeGate Charge780nC
Electrical Characteristics of FWD
VFMForward Voltage22.4V
trrReverse Recovery Time160ns
IrrPeak Reverse Recovery Current55A
QrrReverse Recovery Charge5.3μC
Thermal Resistance Characteristics
RJCJunction-To-Case (IGBT Part, Per Leg)0.2°C/W
RJCJunction-To-Case (Diode Part, Per Leg)0.5°C/W
RCSCase-To-Sink (Conductive Grease Applied)0.1°C/W

2410121228_YANGJIE-MG75HF12MRC1_C781197.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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