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{"title":"IGBT Module MG35P12P3 S M323 Featuring Low VCEsat and Fast Soft Recovery Diode","imgUrl":"","attrs":{"Description":"Single IGBTs RoHS","Mfr. Part #":"MG35P12P3","Model Number":"MG35P12P3"}}
{"title":"High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and","imgUrl":"https:\/\/img.chinax.com\/nimg\/7a\/86\/aa7b113746f69933147e2967da30-200x200-1\/high_speed_igbt_infineon_ikw40n65h5_650_volt_40_amp_featuring_trenchstop_5_and_rapid_1_diode_for_switching.jpg","attrs":{"Td(off)":"165ns","Pd - Power Dissipation":"250W","Td(on)":"22ns","Collector-Emitter Breakdown Voltage (Vces)":"650V"}}
{"title":"650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge","imgUrl":"https:\/\/img.chinax.com\/nimg\/eb\/da\/eab5766b370d3ea0bc1a0e2969c9-200x200-1\/650v_high_speed_switching_igbt_vbsemi_elec_vbp165i80_with_ultra_low_gate_charge_and_avalanche_energy_rating.jpg","attrs":{"Description":"TO-247 Single IGBTs RoHS","Mfr. Part #":"VBP165I80","Model Number":"VBP165I80","Package":"TO-247"}}
{"title":"EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and","imgUrl":"https:\/\/img.chinax.com\/nimg\/81\/38\/b2dcccb5af548d53c7fce0c04ac9-200x200-1\/econodual3_igbt_module_infineon_ff600r12me4_with_trench_fieldstop_igbt4_and_emitter_controlled_diode.jpg","attrs":{"Pd - Power Dissipation":"4.05kW","Td(off)":"480ns","Td(on)":"160ns","Collector-Emitter Breakdown Voltage (Vces)":"1.2kV"}}
{"title":"650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and","imgUrl":"https:\/\/img.chinax.com\/nimg\/74\/1e\/8711499122132e86e0d20f84d590-200x200-1\/650v_60a_trench_field_stop_igbt_sptech_spt60n65f1a1_used_in_solar_welding_and_motion_control_systems.jpg","attrs":{"Td(off)":"165ns","Pd - Power Dissipation":"260W","Td(on)":"56ns","Operating Temperature":"-40\u2103~+150\u2103"}}
{"title":"650V 50A insulated gate bipolar transistor with low gate charge and easy","imgUrl":"https:\/\/img.chinax.com\/nimg\/bb\/75\/1d1e38cf48acf6de7544b71723f8-200x200-1\/650v_50a_insulated_gate_bipolar_transistor_with_low_gate_charge_and_easy_paralleling_hxy_mosfet_spt50n65f1a1t8tl_hxy.jpg","attrs":{"Pd - Power Dissipation":"250W","Td(off)":"110ns","Td(on)":"17ns","Collector-Emitter Breakdown Voltage (Vces)":"650V"}}
{"title":"High speed switching VBsemi Elec VBE16I10 600V IGBT for SMPS and telecom power","imgUrl":"https:\/\/img.chinax.com\/nimg\/7d\/e8\/d67b497ba0ef1e492bd7bb6f131d-200x200-1\/high_speed_switching_vbsemi_elec_vbe16i10_600v_igbt_for_smps_and_telecom_power_supply_solutions.jpg","attrs":{"Description":"TO-252 Single IGBTs RoHS","Mfr. Part #":"VBE16I10","Model Number":"VBE16I10","Package":"TO-252"}}
The MG35P12P3 S-M323 is a high-performance IGBT module designed for various power electronics applications. It features low switching losses, low VCE(sat) with a positive temperature coefficient, and includes a fast and soft recovery anti-parallel FWD. Its low inductance case and high short circuit capability make it suitable for demanding environments. The module utilizes isolated heatsink technology (DBC) for improved thermal management and can operate at a maximum junction temperature of 175.