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Hefei Purple Horn E-Commerce Co., Ltd.

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China IGBT YANGJIE DGW40N120CTLQ for automotive industrial inverter AC DC servo drive
China IGBT YANGJIE DGW40N120CTLQ for automotive industrial inverter AC DC servo drive

  1. China IGBT YANGJIE DGW40N120CTLQ for automotive industrial inverter AC DC servo drive

IGBT YANGJIE DGW40N120CTLQ for automotive industrial inverter AC DC servo drive

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Pd - Power Dissipation 428W
Td(off) 180ns
Td(on) 45ns
Operating Temperature -40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Input Capacitance(Cies) 2.5nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.8V@1.4mA
Gate Charge(Qg) 0.33uC@15V
Reverse Recovery Time(trr) 439ns
Switching Energy(Eoff) 1.7mJ
Turn-On Energy (Eon) 3.8mJ
Description IGBT 1.2kV 80A 428W Through Hole TO-247
Mfr. Part # DGW40N120CTLQ
Package TO-247
Model Number DGW40N120CTLQ

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  1. Product Details
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Product Specification

Pd - Power Dissipation 428W Td(off) 180ns
Td(on) 45ns Operating Temperature -40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces) 1.2kV Input Capacitance(Cies) 2.5nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.8V@1.4mA Gate Charge(Qg) 0.33uC@15V
Reverse Recovery Time(trr) 439ns Switching Energy(Eoff) 1.7mJ
Turn-On Energy (Eon) 3.8mJ Description IGBT 1.2kV 80A 428W Through Hole TO-247
Mfr. Part # DGW40N120CTLQ Package TO-247
Model Number DGW40N120CTLQ

Product Overview

The DGW40N120CTLQ is a high-performance IGBT designed for automotive and industrial applications. It features low collector-emitter saturation voltage, a maximum junction temperature of 175, and is qualified to AEC-Q101. This device includes a fast and soft recovery anti-parallel FWD, offering high short circuit capability (10s) and RoHS compliance. It is suitable for general inverters, AC/DC servo drive amplifiers, and uninterruptible power supplies.

Product Attributes

  • Brand: S-M370D
  • Certifications: RoHS Compliant, AEC-Q101 Qualified

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Collector-Emitter Breakdown VoltageVCEDC1200V
Collector CurrentICTC= 25C80A
TC= 100C40
VCE=1200 V40
VCE(sat), IC=40A1.85
Diode Forward CurrentIFTC= 25C80A
TC= 100C40
IF= 40A1.60
Tj= 150C2.60
Continuous Gate-Emitter VoltageVGE20V
Transient Gate-Emitter VoltageVGE(tp10s,D<0.010)30V
Turn off Safe Operating AreaVCE1200V, Tj 150C160A
Pulsed Collector CurrentICMVGE=15V, tp limited by Tjmax160A
Diode Pulsed CurrentIFpulstp limited by Tjmax160A
Short Circuit Withstand TimeTscVGE= 15V, VCC=600VVCEM1200V10s
Power DissipationPtotTj=175C,Tc=25C428W
Static Collector-Emitter Breakdown VoltageBVCESVGE=0V, IC=250A1200V
Gate Threshold VoltageVGE(th)VGE=VCE, IC=1.4mA4.85.66.5V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=40AV
Tj=25C1.85
Tj=125C2.20
Tj=150C2.302.40
Zero Gate Voltage Collector CurrentICESVCE=1200V, VGE=0VmA
Tj= 25C0.25
Tj=150C5.00
Gate-Emitter Leakage CurrentIGESVCE= 0V, VGE= 30V200nA
Input CapacitanceCiesVCE= 25V, VGE= 0V, f = 1MHz2.50nF
Reverse Transfer CapacitanceCres0.09nF
Gate ChargeQGVCC=960V,IC=40A, VGE=15V0.33uC
Short Circuit Collector CurrentISCVGE=15V, tsc10us, Vcc=600V,Tj150C150A
Operating Junction TemperatureTj-40175C
Storage TemperatureTs-55150C
Soldering Temperaturewave soldering 1.6mm from case for 10s260C
Diode Forward VoltageVFIF= 40AV
Tj= 25C1.60
Tj= 125C1.802.00
Tj= 150C1.702.60
Turn-on Delay Timetd(on)VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12ns
Tj= 25C45
Tj= 125C50
Tj= 150C53
Rise TimetrVCC= 600V, IC=40A, VGE= -15V~15V, Rg=12ns
Tj= 25C56
Tj= 125C58
Tj= 150C60
Turn-on EnergyEonVCC= 600V, IC=40A, VGE= -15V~15V, Rg=12mJ
Tj= 25C3.8
Tj= 125C5.4
Tj= 150C5.8
Turn-off Delay Timetd(off)VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12ns
Tj= 25C180
Tj= 125C240
Tj= 150C260
Fall TimetfVCC= 600V, IC=40A, VGE= -15V~15V, Rg=12ns
Tj= 25C80
Tj= 125C85
Tj= 150C90
Turn-off EnergyEoffVCC= 600V, IC=40A, VGE= -15V~15V, Rg=12mJ
Tj= 25C1.7
Tj= 125C2.7
Tj= 150C3.0
Reverse Recovery CurrentIrrIF=40A, VR=600V, di/dt= -520A/sA
Tj= 25C14
Tj= 125C18
Tj= 150C20
Diode reverse recovery timetrrIF=40A, VR=600V, di/dt= -520A/sns
Tj= 25C439
Tj= 125C628
Tj= 150C773
Reverse Recovery ChargeQrrIF=40A, VR=600V, di/dt= -520A/suC
Tj= 25C2.55
Tj= 125C6.33
Tj= 150C7.05
Reverse Recovery EnergyErecIF=40A, VR=600V, di/dt= -520A/smJ
Tj= 25C0.92
Tj= 125C2.05
Tj= 150C2.25
IGBT Thermal Resistance, Junction - CaseRth(j-c)0.35K/W
Diode Thermal Resistance, Junction - CaseRth(j-c)0.65K/W
Thermal Resistance, Junction - AmbientRth(j-a)40K/W

2410121237_YANGJIE-DGW40N120CTLQ_C20600427.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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