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Hefei Purple Horn E-Commerce Co., Ltd.

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China IGBT module YANGJIE MG25P12E1 with maximum junction temperature 175 and 166W
China IGBT module YANGJIE MG25P12E1 with maximum junction temperature 175 and 166W

  1. China IGBT module YANGJIE MG25P12E1 with maximum junction temperature 175 and 166W

IGBT module YANGJIE MG25P12E1 with maximum junction temperature 175 and 166W

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Pd - Power Dissipation 166W
Td(off) 104ns
Td(on) 16ns
Operating Temperature -40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Input Capacitance(Cies) 1.45nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.2V@1.2mA
Gate Charge(Qg) 0.2uC
Switching Energy(Eoff) 1.68mJ
Turn-On Energy (Eon) 2.58mJ
Description IGBT 1.2kV 25A 166W Through Hole,107.5x45mm
Mfr. Part # MG25P12E1
Package Through Hole,107.5x45mm
Model Number MG25P12E1

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Product Specification

Pd - Power Dissipation 166W Td(off) 104ns
Td(on) 16ns Operating Temperature -40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces) 1.2kV Input Capacitance(Cies) 1.45nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.2V@1.2mA Gate Charge(Qg) 0.2uC
Switching Energy(Eoff) 1.68mJ Turn-On Energy (Eon) 2.58mJ
Description IGBT 1.2kV 25A 166W Through Hole,107.5x45mm Mfr. Part # MG25P12E1
Package Through Hole,107.5x45mm Model Number MG25P12E1

Product Overview

The MG25P12E1 S-M345 is a RoHS compliant IGBT module designed for motor drivers, AC and DC servo drive amplifiers, and UPS applications. It features low switching losses, low VCE(sat) with a positive temperature coefficient, an integrated fast & soft recovery anti-parallel FWD, a low inductance case, high short circuit capability (10us), and a maximum junction temperature of 175.

Product Attributes

  • Brand: Yangjie
  • Certifications: RoHS Compliant

Technical Specifications

ModuleParameterSymbolConditionsValueUnit
IGBT-inverterCollector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=251200V
Continuous Collector CurrentICTC=100,Tvjmax=17525A
Repetitive Peak Collector CurrentICRMtp=1ms50A
Gate-Emitter VoltageVGESTvj=25±20V
Total Power DissipationPtotTC=25, Tvjmax=175166W
Gate-emitter Threshold VoltageVGE(th)VGE=VCE, IC =1.2mA,Tvj=255.2-6.5V
Collector-Emitter Cut-off CurrentICESVCE=1200V,VGE=0V, Tvj=251.0mA
Collector-Emitter Saturation VoltageVCE(sat)IC=25A,VGE=15V, Tvj=251.90V
Input CapacitanceCiesVCE=25V, VGE =0V, f=1MHz, Tvj=251.45nF
Turn-on Delay Timetd(on)IC=25A, VCE=600V, VGE= 15V, RG=33, Tvj=2516ns
Diode-inverterRepetitive Peak Reverse VoltageVRRMTvj=251200V
Continuous DC Forward CurrentIF25A
Repetitive Peak Forward CurrentIFRMtp=1ms50A
I2t-valueI2tVR=0V,tp=10ms,Tvj=12590.0A2s
Forward VoltageVFIF=25A,Tvj=252.00V
Recovered ChargeQrrIF=25A, VR=600V, -diF/dt =500A/us, Tvj=252.78uC
Peak Reverse Recovery CurrentIrrIF=25A, VR=600V, -diF/dt =500A/us, Tvj=2518A
Reverse Recovery EnergyErecIF=25A, VR=600V, -diF/dt =500A/us, Tvj=250.94mJ
IGBT-brake-chopperCollector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=251200V
Continuous Collector CurrentICTC=100,Tvjmax=17515A
Repetitive Peak Collector CurrentICRMtp=1ms30A
Gate-Emitter VoltageVGESTvj=25±20V
Total Power DissipationPtotTC=25, Tvjmax=175155W
Gate-emitter Threshold VoltageVGE(th)VGE=VCE, IC =0.5mA,Tvj=255.2-6.5V
Collector-Emitter Cut-off CurrentICESVCE=1200V,VGE=0V, Tvj=251.0mA
Collector-Emitter Saturation VoltageVCE(sat)IC=15A,VGE=15V, Tvj=251.90V
Input CapacitanceCiesVCE=25V, VGE=0V, f=1MHz, Tvj=251.35nF
Turn-on Delay Timetd(on)IC=15A, VCE=600V, VGE= 15V, RG=39, Tvj=2511ns
Diode-brake-chopperRepetitive Peak Reverse VoltageVRRMTvj=251200V
Continuous DC Forward CurrentIF15A
Repetitive Peak Forward CurrentIFRMtp=1ms30A
I2t-valueI2tVR=0V,tp=10ms,Tvj=12540.0A2s
Forward VoltageVFIF=15A,Tvj=252.00V
Recovered ChargeQrrIF=15A, VR=600V, -diF/dt =550A/us, Tvj=251.20uC
Peak Reverse Recovery CurrentIrrIF=15A, VR=600V, -diF/dt =550A/us, Tvj=2510A
Reverse Recovery EnergyErecIF=15A, VR=600V, -diF/dt =550A/us, Tvj=250.35mJ
Diode-rectifierRepetitive Peak Reverse VoltageVRRMTvj=251600V
Average output CurrentIF(AV)50/60Hz, sine wave, TC=10035A
Maximum RMS Current at Rectifier OutputIRMSMTC=10060A
Surge Forward CurrentIFSMVR=0V,tp=10ms,Tvj=25370A
I2t-valueI2tVR=0V,tp=10ms,Tvj=25680A2s
Diode Forward VoltageVFIF=25A,Tvj=1251.02V
NTC-ThermistorRated ResistanceR255.0k
Deviation of R100ΔR/RTC=100,R100=493.3-5 to 5%
Power DissipationP2520.0mW
B-valueB25/50R2=R25exp[B25/50(1/T2-1/(298.15 K))]3375K
Module lead resistance, terminals-chipRcc’+EE’TC=25, per switch4.0m
Module CharacteristicsIsolation voltageVisolt=1min,f=50Hz2500V
Maximum Junction TemperatureTjmax175
Operating Junction TemperatureTvj op-40 to 150
Storage TemperatureTstg-40 to 125
Stray-inductance-moduleLsce60nH
Module lead resistance, terminals-chipRAA’+CC’3.0m
Thermal Resistance Junction-to CaseRJCper IGBT-inverter0.90K/W
Thermal Resistance Case-to SinkRCSper IGBT-inverter0.33K/W
Module-to-Sinkper Module0.02K/W
Module-to-Sink TorqueMs3.0-6.0N·m
Weight of ModuleG180g

2505121648_YANGJIE-MG25P12E1_C2942704.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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