| Td(off) | 226ns |
| Pd - Power Dissipation | 1kW |
| Td(on) | 116ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.42nF |
| Input Capacitance(Cies) | 10nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@4mA |
| Gate Charge(Qg) | 275nC@15V |
| Reverse Recovery Time(trr) | 180ns |
| Switching Energy(Eoff) | 8.6mJ |
| Turn-On Energy (Eon) | 7mJ |
| Description | 1kW 1.2kV Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | MG150HF12MIC2 |
| Package | Screw Terminals |
| Model Number | MG150HF12MIC2 |
View Detail Information
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Product Specification
| Td(off) | 226ns | Pd - Power Dissipation | 1kW |
| Td(on) | 116ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.42nF | Input Capacitance(Cies) | 10nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@4mA | Gate Charge(Qg) | 275nC@15V |
| Reverse Recovery Time(trr) | 180ns | Switching Energy(Eoff) | 8.6mJ |
| Turn-On Energy (Eon) | 7mJ | Description | 1kW 1.2kV Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | MG150HF12MIC2 | Package | Screw Terminals |
| Model Number | MG150HF12MIC2 |
The MG150HF12MIC2 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. This module offers fast switching and a short tail current, complemented by free-wheeling diodes with fast and soft reverse recovery. Ideal for welding machines, power supplies, and other industrial power applications.
| Description | Symbol | Values | Units | Conditions |
| Absolute Maximum Ratings | (TC = 25 unless otherwise specified) | |||
| Collector - Emitter Voltage | VCES | 1200 | V | |
| Gate-Emitter Voltage | VGES | 20 | V | |
| DC Collector Current | IC | 210 | A | TC=25 |
| DC Collector Current | IC | 150 | A | TC=80 |
| Repetitive Peak Collector Current | ICM | 300 | A | TC=25C, tp=1ms |
| Power Dissipation Per IGBT | Ptot | 1000 | W | |
| Junction Temperature Range | TJ | -40 to +150 | C | |
| Storage Temperature Range | TSTG | -40 to +125 | C | |
| Insulation Test Voltage | Viso | 3000 | V | AC, t=1min |
| Mounting Torque Power Terminals | 515% | N*m | Screw: M6 | |
| Mounting Torque Mounting Screw | 515% | N*m | M6 | |
| Electrical Characteristics of IGBT | (TJ = 25 unless otherwise specified) | |||
| Collector-Emitter Breakdown Voltage | V(BR)CES | 1200 | V | VGE = 0V, IC=1mA |
| Collector Leakage Current | ICES | 0.5 | mA | VCE=1200V,VGE=0V, TJ=25C |
| Collector Leakage Current | ICES | 1 | mA | VCE=1200V, VGE=0V, TJ=125C |
| Gate Leakage Current | IGES | -200 to 200 | nA | VCE=0V, VGE=20V |
| Gate - Emitter Threshold Voltage | VGE(th) | 5.0 - 6.5 | V | VCE=VGE, IC=4mA |
| Collector Emitter Saturation Voltage | VCE(sat) | 1.9 - 2.1 | V | IC=150A, VGE=15V, TJ=25C |
| Collector Emitter Saturation Voltage | VCE(sat) | 2.0 - 2.3 | V | IC=150A VGE=15V, TJ=125C |
| Input Capacitance | Cies | 10 | nF | VCE=25V, VGE=0V, f =1MHz |
| Reverse Transfer Capacitance | Cres | 0.42 | nF | |
| Turn-on Delay Time | td(on) | 116 | ns | VCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load |
| Rise Time | tr | 31 | ns | VCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load |
| Turn-off Delay Time | td(off) | 226 | ns | VCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load |
| Fall Time | Tf | 185 | ns | VCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load |
| Turn-on Delay Time | td(on) | 127 | ns | VCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load |
| Rise Time | tr | 35 | ns | VCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load |
| Turn-off Delay Time | td(off) | 305 | ns | VCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load |
| Fall Time | Tf | 300 | ns | VCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load |
| Turn-on Switching Loss | Eon | 7.0 | mJ | VCC=600V, RG =3.5 IC=150A TJ=25C |
| Turn-on Switching Loss | Eon | 9.9 | mJ | VCC=600V, RG =3.5 IC=150A TJ=125C |
| Turn-off Switching Loss | Eoff | 8.6 | mJ | VCC=600V, RG =3.5 IC=150A TJ=25C |
| Turn-off Switching Loss | Eoff | 14.6 | mJ | VCC=600V, RG =3.5 IC=150A TJ=125C |
| Gate Charge | Qge | 275 | nC | VCC=600V,IC=150A, VGE=15V |
| Short Circuit Safe Operating Area | SCSOA | 735 | A | VCC = 600V, VGE = 15V, TJ = 125, 10 s |
| Electrical Characteristics of FWD | (TC = 25 unless otherwise specified) | |||
| Forward Voltage | VFM | 1.72 - 1.9 | V | IF=150A, VGE=0V; TJ=25C |
| Forward Voltage | VFM | 1.82 - 2.0 | V | TJ=125C |
| Reverse Recovery Time | trr | 180 | ns | IF=150A , VR=600V, diF/dt=-2960A/s VGE = -15V TJ=25C |
| Reverse Recovery Time | trr | 359 | ns | IF=150A , VR=600V, diF/dt=-2960A/s VGE = -15V TJ=125C |
| Peak Reverse Recovery Current | Irr | 110 | A | TJ=25C |
| Peak Reverse Recovery Current | Irr | 120 | A | TJ=125C |
| Reverse Recovery Charge | Qrr | 8.3 | mJ | TJ=25C |
| Reverse Recovery Charge | Qrr | 15.9 | mJ | TJ=125C |
| Thermal Resistance Characteristics | ||||
| Junction-To-Case (IGBT Part, Per Leg) | RJC | 0.1 | /W | |
| Junction-To-Case (Diode Part, Per Leg) | RJC | 0.27 | /W | |
| Case-To-Sink (Conductive Grease Applied) | RCS | 0.1 | /W | |
| Power Terminals Torque | Mt | 3 - 5 | Nm | Screw:M6 |
| Mounting Screw Torque | Ms | 3 - 5 | Nm | M6 |
| Weight Of Module | Weight | 300 | g |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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