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Hefei Purple Horn E-Commerce Co., Ltd.

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China Current resonant inverter switching solution featuring TOSHIBA GT50JR22 Silicon
China Current resonant inverter switching solution featuring TOSHIBA GT50JR22 Silicon

  1. China Current resonant inverter switching solution featuring TOSHIBA GT50JR22 Silicon

Current resonant inverter switching solution featuring TOSHIBA GT50JR22 Silicon

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Description TO-3P Single IGBTs RoHS
Mfr. Part # GT50JR22
Package TO-3P
Model Number GT50JR22

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  1. Product Details
  2. Company Details

Product Specification

Description TO-3P Single IGBTs RoHS Mfr. Part # GT50JR22
Package TO-3P Model Number GT50JR22

Product Overview

The GT50JR22 is a Silicon N-Channel IGBT designed for dedicated current-resonant inverter switching applications. It features 6.5th generation technology, high-speed switching capabilities with a typical fall time of 0.05 s, and a low saturation voltage of 1.55 V (typ.). The device integrates a Freewheeling Diode (FWD) monolithically, offering enhancement mode operation and a high junction temperature capability of 175C (max).

Product Attributes

  • Brand: Toshiba
  • Start of Commercial Production: 2012-03
  • Packaging: TO-3P(N)
  • Certifications: RoHS COMPATIBLE

Technical Specifications

CharacteristicsSymbolRatingUnitTest Condition
Absolute Maximum Ratings
Collector-emitter voltageVCES600V(Tc = 25)
Gate-emitter voltageVGES25V
Collector current (DC)IC50A(Tc = 100)
Collector current (1 ms)ICP100A
Diode forward current (DC)IF40A(Tc = 25)
Diode forward current (100 s)IFP100A(Tc = 100)
Collector power dissipationPC230W(Tc = 25)
Collector power dissipationPC115W(Tc = 100)
Junction temperatureTj175(max)
Storage temperatureTstg-55 to 175
Mounting torqueTOR0.8Nm(Note 1)
Thermal Characteristics
Junction-to-case thermal resistanceRth(j-c)0.65/WMax
Static Characteristics
Gate leakage currentIGES100nAVGE = 25 V, VCE = 0 V
Collector cut-off currentICES1mAVCE = 600 V, VGE = 0 V
Gate-emitter cut-off voltageVGE(OFF)4.5VIC = 50 mA, VCE = 5 V
Collector-emitter saturation voltageVCE(sat)1.55VIC = 50 A, VGE = 15 V (typ.)
Diode forward voltageVF2.1VIF = 15 A, VGE = 0 V (max)
Dynamic Characteristics
Input capacitanceCies2700pFVCE = 10 V, VGE = 0 V, f = 1 MHz (typ.)
Switching time (rise time)tr0.18sResistive load VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.)
Switching time (turn-on time)ton0.25sResistive load VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.)
Switching time (fall time)tf0.05sResistive load VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.)
Switching time (turn-off time)toff0.33sResistive load VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.)
Reverse recovery timetrr0.35sIF = 15 A, VGE = 0 V, di/dt = -20 A/s (typ.)

2411220236_TOSHIBA-GT50JR22_C5151667.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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