Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 312W |
| Td(off) | 159ns |
| Td(on) | 47ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 19pF |
| Input Capacitance(Cies) | 2.662nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Gate Charge(Qg) | 102nC |
| Pulsed Current- Forward(Ifm) | 180A |
| Output Capacitance(Coes) | 206pF |
| Reverse Recovery Time(trr) | 808ns |
| Switching Energy(Eoff) | 2mJ |
| Turn-On Energy (Eon) | 3mJ |
| Description | 312W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG60T65HS1 |
| Package | TO-247 |
| Model Number | JNG60T65HS1 |
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Product Specification
| Pd - Power Dissipation | 312W | Td(off) | 159ns |
| Td(on) | 47ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 19pF | Input Capacitance(Cies) | 2.662nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA | Gate Charge(Qg) | 102nC |
| Pulsed Current- Forward(Ifm) | 180A | Output Capacitance(Coes) | 206pF |
| Reverse Recovery Time(trr) | 808ns | Switching Energy(Eoff) | 2mJ |
| Turn-On Energy (Eon) | 3mJ | Description | 312W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG60T65HS1 | Package | TO-247 |
| Model Number | JNG60T65HS1 |
The JNG60T65HS1 Trench IGBT from JIAEN Semiconductor offers advanced performance for various power electronic applications. It features high speed switching, higher system efficiency, and soft current turn-off waveforms, making it ideal for motor control, general inverters, and other soft-switching applications. The device boasts a 650V voltage rating and a 60A continuous collector current, with a typical saturation voltage of 2.1V.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 120 | A | |||
| Continuous Collector Current (TC=100) | IC | 60 | A | |||
| Pulsed Collector Current | ICM | Note 1 | 180 | A | ||
| Diode Continuous Forward Current (TC=100) | IF | 60 | A | |||
| Diode Maximum Forward Current | IFM | Note 1 | 180 | A | ||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 312 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 125 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 0.4 | / W | |||
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 1.3 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 60A | - | 2.1 | 2.7 | V |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=60A | - | 102 | - | nC |
| Gate-Emitter Charge | Qge | - | 23.4 | - | nC | |
| Gate-Collector Charge | Qgc | - | 51.1 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=60A RG=15 Inductive Load TC=25 | - | 47 | - | ns |
| Turn-on Rise Time | tr | - | 123 | - | ns | |
| Turn-off Delay Time | td(off) | - | 159 | - | ns | |
| Turn-off Fall Time | tf | - | 67 | - | ns | |
| Turn-on Switching Loss | Eon | - | 2.98 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 1.61 | - | mJ | |
| Total Switching Loss | Ets | - | 4.59 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 2662 | - | pF |
| Output Capacitance | Coes | - | 206 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 19 | - | pF | |
| Diode Forward Voltage | VF | IF=60A | - | 1.5 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 60A Rg=15 | - | 808 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 16.9 | - | A | |
| Diode Reverse Recovery Charge | QRR | - | 2143 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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