Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 110W |
| Td(off) | 215ns |
| Td(on) | 12ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 17pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.3mA |
| Gate Charge(Qg) | 62nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 30A |
| Reverse Recovery Time(trr) | 115ns |
| Switching Energy(Eoff) | 270uJ |
| Turn-On Energy (Eon) | 160uJ |
| Description | 110W 600V FS (Field Stop) TO-220-3 Single IGBTs RoHS |
| Mfr. Part # | IKP10N60T |
| Package | TO-220-3 |
| Model Number | IKP10N60T |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 110W | Td(off) | 215ns |
| Td(on) | 12ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 17pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.3mA | Gate Charge(Qg) | 62nC@15V |
| Operating Temperature | -40℃~+175℃ | Pulsed Current- Forward(Ifm) | 30A |
| Reverse Recovery Time(trr) | 115ns | Switching Energy(Eoff) | 270uJ |
| Turn-On Energy (Eon) | 160uJ | Description | 110W 600V FS (Field Stop) TO-220-3 Single IGBTs RoHS |
| Mfr. Part # | IKP10N60T | Package | TO-220-3 |
| Model Number | IKP10N60T |
The IKP10N60T is a Low Loss DuoPack featuring IGBT in TRENCHSTOP and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode. It offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Designed for variable speed drives in washing machines, air conditioners, and induction cooking, as well as Uninterrupted Power Supplies, its TRENCHSTOP and Fieldstop technology provides tight parameter distribution and high ruggedness. The NPT technology ensures easy parallel switching due to a positive temperature coefficient in VCE(sat). It boasts low EMI, low gate charge, and a very soft, fast recovery anti-parallel Emitter Controlled HE diode. The product is qualified according to JEDEC1 for target applications, features Pb-free lead plating, and is RoHS compliant.
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking Code | Package |
| IKP10N60T | 600V | 10A | 1.5V | 175C | K10T60 | PG-TO-220-3 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter voltage, Tj 25C | VCE | 600 | V | |||
| DC collector current, limited by Tjmax | IC | TC = 25C | 24 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 18 | A | ||
| Pulsed collector current, tp limited by Tjmax | ICpuls | 30 | A | |||
| Diode forward current, limited by Tjmax | IF | TC = 25C | 24 | A | ||
| Diode forward current, limited by Tjmax | IF | TC = 100C | 18 | A | ||
| Diode pulsed current, tp limited by Tjmax | IFpuls | 30 | A | |||
| Gate-emitter voltage | VGE | 20 | V | |||
| Short circuit withstand time | tSC | VGE = 15V, VCC 400V, Tj 150C | 5 | s | ||
| Power dissipation | Ptot | TC = 25C | 110 | W | ||
| Operating junction temperature | Tj | -40 | +175 | C | ||
| Storage temperature | Tstg | -55 | +150 | C | ||
| Soldering temperature, wavesoldering, 1.6 mm (0.063 in.) from case for 10s | 260 | C | ||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, IC=0.2mA | 600 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=10A, Tj=25C | 1.5 | 1.8 | V | |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=10A, Tj=175C | 2.05 | V | ||
| Diode forward voltage | VF | VG E=0V, IF=10A, T j=25C | 1.6 | V | ||
| Diode forward voltage | VF | VG E=0V, IF=10A, T j=175C | 2.0 | V | ||
| Gate-emitter threshold voltage | VGE(th) | IC=0.3mA,VCE=VGE | 4.1 | 4.6 | 5.7 | V |
| Zero gate voltage collector current | ICEs | VCE=600V, VGE=0V, Tj=25C | 40 | A | ||
| Zero gate voltage collector current | ICEs | VCE=600V, VGE=0V, Tj=175C | 1000 | A | ||
| Gate-emitter leakage current | IGEs | VCE=0V,VGE=20V | 100 | nA | ||
| Transconductance | gfs | VCE=20V, IC=10A | 6 | S | ||
| Input capacitance | Ciss | VCE=25V, VGE=0V, f=1MHz | 551 | pF | ||
| Output capacitance | Coss | 40 | pF | |||
| Reverse transfer capacitance | Crss | 17 | pF | |||
| Gate charge | Qg ate | VCC=480V, IC=10A, VGE=15V | 62 | nC | ||
| Internal emitter inductance | LE | measured 5mm (0.197 in.) from case | 7 | nH | ||
| Short circuit collector current | IC(SC) | VGE=15V,tSC5s, VCC = 400V, Tj = 25C | 100 | A | ||
| Turn-on delay time | td(on) | Tj=25C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L=60nH,C=40pF | 12 | ns | ||
| Rise time | tr | 8 | ns | |||
| Turn-off delay time | td(off) | 215 | ns | |||
| Fall time | tf | 38 | ns | |||
| Turn-on energy | Eon | 0.16 | mJ | |||
| Turn-off energy | Eoff | 0.27 | mJ | |||
| Total switching energy | Ets | 0.43 | mJ | |||
| Diode reverse recovery time | trr | Tj=25C, VR=400V, IF=10A, diF/dt=880A/s | 115 | ns | ||
| Diode reverse recovery charge | Qrr | 0.38 | C | |||
| Diode peak reverse recovery current | Irr | 10 | A | |||
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | 680 | A/s | |||
| Turn-on delay time | td(on) | Tj=175C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L=60nH,C=40pF | 10 | ns | ||
| Rise time | tr | 11 | ns | |||
| Turn-off delay time | td(off) | 233 | ns | |||
| Fall time | tf | 63 | ns | |||
| Turn-on energy | Eon | 0.26 | mJ | |||
| Turn-off energy | Eoff | 0.35 | mJ | |||
| Total switching energy | Ets | 0.61 | mJ | |||
| Diode reverse recovery time | trr | Tj=175C, VR=400V, IF=10A, diF/dt=880A/s | 200 | ns | ||
| Diode reverse recovery charge | Qrr | 0.92 | C | |||
| Diode peak reverse recovery current | Irr | 13 | A | |||
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | 390 | A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!