Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 31W |
| Td(off) | - |
| Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 880pF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V@250uA |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
| Description | 31W 650V TO-220MF Single IGBTs RoHS |
| Mfr. Part # | JT015N065FED |
| Package | TO-220MF |
| Model Number | JT015N065FED |
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Product Specification
| Pd - Power Dissipation | 31W | Td(off) | - |
| Td(on) | - | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 880pF@25V | IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V@250uA | Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃@(Tj) | Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | - | Turn-On Energy (Eon) | - |
| Description | 31W 650V TO-220MF Single IGBTs RoHS | Mfr. Part # | JT015N065FED |
| Package | TO-220MF | Model Number | JT015N065FED |
The JT015N065FED is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.
| Parameter | Symbol | Value | Unit | Conditions |
| MAIN CHARACTERISTICS | ||||
| Collector Current (continuous) | IC | 15 | A | T=100 |
| Collector Current (continuous) | IC | 30 | A | T=25 |
| Collector-Emitter Voltage | VCES | 650 | V | - |
| Vcesat-typ | VCE(sat) | 1.6 | V | VGE=15V, IC=15A, TC=25 |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Collector-Emmiter Voltage | Vces | 650 | V | (Tc=25) |
| Collector Current-continuous | IC | 30 | A | (T=25) |
| Collector Current-continuous | IC | 15 | A | (T=100) |
| Collector Current pulse (note 1) | ICM | 45 | A | - |
| Gate-Emmiter Voltage | VGES | 20 | V | - |
| Power Dissipation | PD | 31 | W | TC=25 |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | - | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | - | |
| ELECTRICAL CHARACTERISTICS | ||||
| Collector-Emmiter Voltage | BVCES | 650 | V | IC=500A, VGE=0V |
| Breakdown Voltage Temperature Coefficient | BVCES/TJ | 0.5 | V/ | IC=1mA, referenced to 25 |
| Zero Gate Voltage Collector Current | ICES | 10 | A | VCE=650V, VGE=0V, TC=25 |
| Gate Threshold Voltage | VGE(th) | 4.0 - 6.5 | V | VCE = VGE , IC=250A |
| Collector-Emmiter saturation Voltage | VCESAT | 1.6 - 2.0 | V | VGE=15V IC=15A Tc=25 |
| Input capacitance | Cies | 880 | pF | VCE=25V, VGE=0V, f=1.0MHZ |
| Thermal Resistance, Junction to Case | Rth(j-c) | 4.8 | /W | - |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W | - |
| Anti-Parallel Diode Characteristics and Maximum Ratings | ||||
| Drain-Source Diode Forward Voltage | VF | 1.4 - 2.2 | V | VGE=0V, IS=15A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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