Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 31.2W |
| Td(off) | 116ns |
| Td(on) | 9ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 3pF |
| Input Capacitance(Cies) | 500pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.08mA |
| Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 24A |
| Output Capacitance(Coes) | 16pF |
| Reverse Recovery Time(trr) | 41ns |
| Switching Energy(Eoff) | 20uJ |
| Turn-On Energy (Eon) | 70uJ |
| Description | 31.2W 650V TO-220FP-3 Single IGBTs RoHS |
| Mfr. Part # | IKA08N65F5 |
| Package | TO-220FP-3 |
| Model Number | IKA08N65F5 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 31.2W | Td(off) | 116ns |
| Td(on) | 9ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 3pF | Input Capacitance(Cies) | 500pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.08mA | Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 24A | Output Capacitance(Coes) | 16pF |
| Reverse Recovery Time(trr) | 41ns | Switching Energy(Eoff) | 20uJ |
| Turn-On Energy (Eon) | 70uJ | Description | 31.2W 650V TO-220FP-3 Single IGBTs RoHS |
| Mfr. Part # | IKA08N65F5 | Package | TO-220FP-3 |
| Model Number | IKA08N65F5 |
The IKA08N65F5 is a high-speed 5th generation FAST IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, and low QG. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. The device is suitable for applications requiring high-speed switching.
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| IKA08N65F5 | 650V | 8A | 1.6V | 175C | K08EEF5 | PG-TO220-3 FP |
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-emitter voltage | VCE | 650 | V | DC |
| DC collector current, limited by Tvjmax | IC | 10.8 / 6.8 | A | TC = 25C / 100C |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 24.0 | A | |
| Turn off safe operating area | - 24.0 | A | VCE 650V, Tvj 175C | |
| Diode forward current, limited by Tvjmax | IF | 12.3 / 7.3 | A | TC = 25C / 100C |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 24.0 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage (tp 10s, D < 0.010) | 30 | V | ||
| Power dissipation | Ptot | 31.2 / 15.6 | W | TC = 25C / 100C |
| Operating junction temperature | Tvj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | C | ||
| Mounting torque, M3 screw | 0.6 | Nm | Maximum of mounting processes |
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction - case | Rth(j-c) | 4.80 | K/W | |
| Diode thermal resistance, junction - case | Rth(j-c) | 5.60 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 65 | K/W |
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
| Static Characteristic | ||||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 8.0A, Tvj = 25C | - | - | 1.60 | V |
| VGE = 15.0V, IC = 8.0A, Tvj = 125C | - | - | 1.80 | |||
| VGE = 15.0V, IC = 8.0A, Tvj = 175C | - | - | 2.10 | |||
| Diode forward voltage | VF | VGE = 0V, IF = 9.0A, Tvj = 25C | - | - | 1.45 | V |
| VGE = 0V, IF = 9.0A, Tvj = 125C | - | - | 1.40 | |||
| VGE = 0V, IF = 9.0A, Tvj = 175C | - | - | 1.40 | |||
| Gate-emitter threshold voltage | VGE(th) | IC = 0.08mA, VCE = VGE | 3.2 | 4.0 | 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - | - | 40.0 | A |
| VCE = 650V, VGE = 0V, Tvj = 175C | - | - | 4000.0 | |||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 8.0A | - | 17.0 | - | S |
| Dynamic Characteristic | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 500 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 16 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 3 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 8.0A, VGE = 15V | - | 22.0 | - | nC |
| Switching Characteristic, Inductive Load | ||||||
| IGBT Characteristic, at Tvj = 25C | ||||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 10 | - | ns |
| Rise time | tr | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 5 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 116 | - | ns |
| Fall time | tf | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 20 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.07 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.02 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.09 | - | mJ |
| IGBT Characteristic, at Tvj = 25C | ||||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 9 | - | ns |
| Rise time | tr | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 3 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 129 | - | ns |
| Fall time | tf | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 35 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.04 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.02 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.06 | - | mJ |
| Diode Characteristic, at Tvj = 25C | ||||||
| Diode reverse recovery time | trr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 41 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 0.14 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 6.6 | - | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | -160 | - | A/s |
| Diode reverse recovery time | trr | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 27 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 0.10 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 6.2 | - | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | -300 | - | A/s |
| IGBT Characteristic, at Tvj = 150C | ||||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 9 | - | ns |
| Rise time | tr | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 6 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 145 | - | ns |
| Fall time | tf | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 18 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.10 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.03 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.13 | - | mJ |
| IGBT Characteristic, at Tvj = 150C | ||||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 9 | - | ns |
| Rise time | tr | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 4 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 165 | - | ns |
| Fall time | tf | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 25 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.06 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.02 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.08 | - | mJ |
| Diode Characteristic, at Tvj = 150C | ||||||
| Diode reverse recovery time | trr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 56 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 0.27 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 7.5 | - | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | -134 | - | A/s |
| Diode reverse recovery time | trr | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 42 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 0.19 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 7.4 | - | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | -240 | - | A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!