Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 300ns |
| Pd - Power Dissipation | 385W |
| Td(on) | 130ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 4.3nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@2.4mA |
| Operating Temperature | -40℃~+150℃ |
| Switching Energy(Eoff) | 3.9mJ |
| Turn-On Energy (Eon) | 4.7mJ |
| Description | IGBT FS (Field Stop) 1.2kV 75A 385W Through Hole,107.5x45mm |
| Mfr. Part # | FS75R12KT4B15 |
| Package | Through Hole,107.5x45mm |
| Model Number | FS75R12KT4B15 |
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Product Specification
| Td(off) | 300ns | Pd - Power Dissipation | 385W |
| Td(on) | 130ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 4.3nF@25V | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@2.4mA | Operating Temperature | -40℃~+150℃ |
| Switching Energy(Eoff) | 3.9mJ | Turn-On Energy (Eon) | 4.7mJ |
| Description | IGBT FS (Field Stop) 1.2kV 75A 385W Through Hole,107.5x45mm | Mfr. Part # | FS75R12KT4B15 |
| Package | Through Hole,107.5x45mm | Model Number | FS75R12KT4B15 |
The FS75R12KT4_B15 is an EconoPACK2 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It offers low VCEsat, high thermal cycling capability, and an integrated NTC temperature sensor, making it suitable for applications such as auxiliary inverters, motor drives, and servo drives.
| Parameter | Value | Unit | Notes |
| IGBT, Inverter - Maximum Rated Values | |||
| Collector-emitter voltage | 1200 | V | Tvj = 25C |
| Continuous DC collector current | 75 | A | TC = 95C, Tvj max = 175C |
| Repetitive peak collector current | 150 | A | tP = 1 ms |
| Total power dissipation | 385 | W | TC = 25C, Tvj max = 175C |
| Gate-emitter peak voltage | +/-20 | V | |
| IGBT, Inverter - Characteristic Values | |||
| Collector-emitter saturation voltage | 1.85 - 2.25 | V | IC = 75 A, VGE = 15 V, Tvj = 25C - 150C |
| Gate threshold voltage | 5.2 - 6.4 | V | IC = 2,40 mA, VCE = VGE, Tvj = 25C |
| Gate charge | 0.57 | C | VGE = -15 V ... +15 V |
| Internal gate resistor | 10 | Tvj = 25C | |
| Input capacitance | 4.30 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | 0.16 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | 1.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time | 0.13 - 0.15 | s | IC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 2,2 , Tvj = 25C - 150C |
| Rise time | 0.02 - 0.035 | s | IC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 2,2 , Tvj = 25C - 150C |
| Turn-off delay time | 0.30 - 0.40 | s | IC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 2,2 , Tvj = 25C - 150C |
| Fall time | 0.045 - 0.09 | s | IC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 2,2 , Tvj = 25C - 150C |
| Turn-on energy loss per pulse | 4.70 - 8.00 | mJ | IC = 75 A, VCE = 600 V, LS = 25 nH, VGE = 15 V, di/dt = 2800 A/s, RGon = 2,2 , Tvj = 25C - 150C |
| Turn-off energy loss per pulse | 3.90 - 6.40 | mJ | IC = 75 A, VCE = 600 V, LS = 25 nH, VGE = 15 V, du/dt = 3800 V/s, RGoff = 2,2 , Tvj = 25C - 150C |
| Short circuit capability | 270 | A | VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case (per IGBT) | 0.39 | K/W | |
| Thermal resistance, case to heatsink (per IGBT) | 0.195 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Operating temperature | -40 - 150 | C | Tvj op |
| Diode, Inverter - Maximum Rated Values | |||
| Repetitive peak reverse voltage | 1200 | V | Tvj = 25C |
| Continuous DC forward current | 75 | A | |
| Repetitive peak forward current | 150 | A | tP = 1 ms |
| It - value | 960 | As | VR = 0 V, tP = 10 ms, Tvj = 125C |
| Diode, Inverter - Characteristic Values | |||
| Forward voltage | 1.65 - 2.15 | V | IF = 75 A, VGE = 0 V, Tvj = 25C - 150C |
| Peak reverse recovery current | 115 - 125 | A | IF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Recovered charge | 8.60 - 16.0 | C | IF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Reverse recovery energy | 2.60 - 5.50 | mJ | IF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Thermal resistance, junction to case (per diode) | 0.62 | K/W | |
| Thermal resistance, case to heatsink (per diode) | 0.31 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Operating temperature | -40 - 150 | C | Tvj op |
| NTC Thermistor - Characteristic Values | |||
| Rated resistance | 5.00 | k | TC = 25C |
| Deviation of R100 | -5 - 5 | % | TC = 100C, R100 = 493 |
| Power dissipation | 20.0 | mW | TC = 25C |
| B-Value (B25/50) | 3375 | K | |
| B-Value (B25/80) | 3411 | K | |
| B-Value (B25/100) | 3433 | K | |
| Module - General Specifications | |||
| Isolation test voltage | 2.5 | kV | RMS, f = 50 Hz, t = 1 min. |
| Material of module baseplate | Cu | ||
| Internal isolation | Al2O3 | Basic insulation (class 1, IEC 61140) | |
| Creepage distance (terminal to heatsink) | 10.0 | mm | |
| Creepage distance (terminal to terminal) | 10.0 | mm | |
| Clearance (terminal to heatsink) | 7.5 | mm | |
| Clearance (terminal to terminal) | 7.5 | mm | |
| Comparative tracking index | > 200 | ||
| Thermal resistance, case to heatsink (per module) | 0.02 | K/W | Paste = 1 W/(mK) / grease = 1 W/(mK) |
| Stray inductance module | 19 | nH | LsCE |
| Module lead resistance (terminals - chip, per switch) | 1.80 | m | TC = 25C |
| Storage temperature | -40 - 125 | C | Tstg |
| Mounting torque for module mounting (Screw M5) | 3.00 - 6.00 | Nm | Mounting according to valid application note |
| Weight | 180 | g | G |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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