| Td(off) | 245ns |
| Pd - Power Dissipation | 188W |
| Td(on) | 19ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 20pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.3mA |
| Gate Charge(Qg) | 180nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 500uJ |
| Turn-On Energy (Eon) | 590uJ |
| Input Capacitance(Cies) | 1.9nF |
| Pulsed Current- Forward(Ifm) | 90A |
| Output Capacitance(Coes) | 62pF |
| Description | 188W 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IKW30N65ET7 |
| Package | TO-247-3 |
| Model Number | IKW30N65ET7 |
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Product Specification
| Td(off) | 245ns | Pd - Power Dissipation | 188W |
| Td(on) | 19ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 20pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.3mA | Gate Charge(Qg) | 180nC@15V |
| Operating Temperature | -40℃~+175℃ | Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 500uJ | Turn-On Energy (Eon) | 590uJ |
| Input Capacitance(Cies) | 1.9nF | Pulsed Current- Forward(Ifm) | 90A |
| Output Capacitance(Coes) | 62pF | Description | 188W 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IKW30N65ET7 | Package | TO-247-3 |
| Model Number | IKW30N65ET7 |
The IKW30N65ET7 is a low-loss IGBT 7 module featuring Trench and Fieldstop technology. It offers a high collector-emitter voltage of 650 V and a continuous collector current of 30 A. Key advantages include very low VCE,sat, low turn-off losses, short tail current, and reduced EMI. It is equipped with a very soft, fast recovery antiparallel diode and supports a maximum junction temperature of 175C. This product is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.
| Parameter | Symbol | Note or test condition | Values | Unit |
| Package | ||||
| Internal emitter inductance | LE | measured 5 mm (0.197 in.) from case | 13 | nH |
| Storage temperature | Tstg | -55 to 150 | C | |
| Soldering temperature | Tsold | wave soldering 1.6 mm (0.063 in.) from case for 10 s | 260 | C |
| Mounting torque | M | M3 screw, Maximum of mounting processes | 0.6 | Nm |
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | |
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.8 | K/W | |
| Diode thermal resistance, junction-case | Rth(j-c) | 1.1 | K/W | |
| IGBT - Maximum Rated Values | ||||
| Collector-emitter voltage | VCE | Tvj 25 C | 650 | V |
| DC collector current, limited by Tvjmax | IC | Tc = 25 C | 60 | A |
| DC collector current, limited by Tvjmax | IC | Tc = 100 C | 39.1 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpulse | 90 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient gate-emitter voltage | VGE | tp 10 s, D < 0.01 | 30 | V |
| Short-circuit withstand time | tSC | VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits 1.0 s | 5 s (VCC 330 V, Tvj = 100 C) 3 s (VCC 400 V, Tvj = 150 C) | s |
| Power dissipation | Ptot | Tc = 25 C | 188 | W |
| Power dissipation | Ptot | Tc = 100 C | 94 | W |
| IGBT - Characteristic Values | ||||
| Collector-emitter saturation voltage | VCEsat | IC = 30 A, VGE = 15 V | 1.35 - 1.65 (Tvj = 25 C) 1.5 (Tvj = 125 C) 1.6 (Tvj = 175 C) | V |
| Gate-emitter threshold voltage | VGEth | IC = 0.3 mA, VCE = VGE | 4.3 - 5.7 | V |
| Zero gate-voltage collector current | ICES | VCE = 650 V, VGE = 0 V | 40 A (Tvj = 25 C) 800 A (Tvj = 175 C) | A |
| Gate-emitter leakage current | IGES | VCE = 0 V, VGE = 20 V | 100 | nA |
| Transconductance | gfs | IC = 30 A, VCE = 20 V | 15 | S |
| Short-circuit collector current | ISC | VCC 400 V, VGE = 15 V, tSC 3 s, Allowed number of short circuits < 1000, Time between short circuits 1.0 s, Tvj = 150 C | 160 | A |
| Input capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1000 kHz | 1900 | pF |
| Output capacitance | Coes | VCE = 25 V, VGE = 0 V, f = 1000 kHz | 62 | pF |
| Reverse transfer capacitance | Cres | VCE = 25 V, VGE = 0 V, f = 1000 kHz | 20 | pF |
| Gate charge | QG | IC = 30 A, VGE = 15 V, VCC = 520 V | 180 | nC |
| Turn-on delay time | td(on) | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 19 - 22 | ns |
| Rise time (inductive load) | tr | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 7 - 15 | ns |
| Turn-off delay time | td(off) | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 245 - 355 | ns |
| Fall time (inductive load) | tf | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 9 - 53 | ns |
| Turn-on energy | Eon | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 0.26 - 0.96 | mJ |
| Turn-off energy | Eoff | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 0.22 - 0.9 | mJ |
| Total switching energy | Ets | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 0.48 - 1.86 | mJ |
| Operating junction temperature | Tvj | -40 to 175 | C | |
| Diode - Maximum Rated Values | ||||
| Repetitive peak reverse voltage | VRRM | Tvj 25 C | 650 | V |
| Diode forward current, limited by bondwire | IF | Tc = 25 C | 40 | A |
| Diode forward current, limited by bondwire | IF | Tc = 100 C | 34.8 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpulse | 90 | A | |
| Diode - Characteristic Values | ||||
| Diode forward voltage | VF | IF = 30 A | 1.55 - 2 (Tvj = 25 C) 1.6 (Tvj = 125 C) 1.55 (Tvj = 175 C) | V |
| Diode reverse recovery time | trr | VR = 400 V | 55 - 140 | ns |
| Diode reverse recovery charge | Qrr | VR = 400 V | 0.48 - 1.9 | C |
| Diode peak reverse recovery current | Irrm | VR = 400 V | 18.4 - 25.8 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400 V | 205 - 440 | A/s |
| Operating junction temperature | Tvj | -40 to 175 | C | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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